公开(公告)号：US10889504B2

公开(公告)日：2021-01-12

申请号：US16344000

申请日：2018-09-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wenlin Zhang ,  Ce Ning ,  Hehe Hu ,  Zhengliang Li

IPC: C01G15/00 ,  H01L29/786

Abstract: An oxide semiconductor composition for use in thin film transistors includes indium oxide, zinc oxide, and an oxide including a doping element of scandium, such as scandium oxide. A molar percentage of the indium oxide can be larger than approximately 50%. The oxide semiconductor composition can have a formula of In2Sc2ZnO7. Manufacturing of the oxide semiconductor composition can include: mixing indium oxide powder, scandium oxide powder, and zinc oxide powder to thereby obtain an oxide shaped object; and sintering the oxide shaped object to form the oxide semiconductor composition. A thin-film transistor for use in a semiconductor device, such as a display apparatus, can include the oxide semiconductor composition, and can thereby have improved mobility of the oxide semiconductor due to the reduced oxygen vacancy therein.

公开(公告)号：US10655947B2

公开(公告)日：2020-05-19

申请号：US16041200

申请日：2018-07-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xuefei Sun ,  Chienhung Liu ,  Zhengliang Li ,  Bin Zhang

IPC: G01B11/06 ,  G01N21/552

Abstract: The present disclosure provides a thickness measuring method and device. The thickness measuring method is used for measuring a thickness of a layer to be measured of a light-transmitting sample to be measured and comprising the steps of: placing the sample to be measured between an optical device and a metal layer, the optical device comprising a light incident surface and a light exit surface; adjusting incident light emitted to the light incident surface of the optical device so that an intensity of light exiting the light exit surface of the optical device is less than 10−12 W/m2, so as to obtain optical parameters of the incident light; and calculating a thickness of the layer to be measured according to the optical parameters of the incident light.

公开(公告)号：US09905705B2

公开(公告)日：2018-02-27

申请号：US15096807

申请日：2016-04-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiangchun Kong ,  Zhanfeng Cao ,  Wei Zhang ,  Bin Zhang ,  Xiaolong He ,  Jincheng Gao ,  Qi Yao ,  Zhengliang Li ,  Chuanxiang Xu

IPC: H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L29/786 ,  H01L27/12 ,  G02F1/1368 ,  G02F1/1343 ,  G02F1/1362

CPC classification number: H01L29/78696 ,  G02F1/134309 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/134345 ,  G02F2001/136222 ,  G02F2201/40 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78603

Abstract: A thin film transistor, an array substrate and a display device are provided by the present disclosure. The thin film transistor is on a base substrate, a profile of a width edge of the channel includes an up-and-down curved section in a direction perpendicular to a surface of the base substrate.

公开(公告)号：US09812579B2

公开(公告)日：2017-11-07

申请号：US15149587

申请日：2016-05-09

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jincheng Gao ,  Bin Zhang ,  Xiaolong He ,  Xiangchun Kong ,  Qi Yao ,  Zhanfeng Cao ,  Zhengliang Li

IPC: H01L29/786 ,  H01L29/45 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A thin film transistor, a method of fabricating the same, an array substrate and a display device are disclosed. The method of fabricating the thin film transistor comprises: forming a semiconductor layer; forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer; forming a source electrode and a drain electrode on the protective layer; and removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode.

公开(公告)号：US09487867B2

公开(公告)日：2016-11-08

申请号：US14495409

申请日：2014-09-24

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Qi Yao ,  Feng Zhang ,  Zhanfeng Cao ,  Zhengliang Li

IPC: C23C30/00 ,  H01L29/786 ,  C23C8/12 ,  H01L21/28

CPC classification number: C23C30/00 ,  C23C8/12 ,  H01L21/28008 ,  H01L29/786

Abstract: The present invention discloses a method for preparing a film and a method for preparing an array substrate, and an array substrate. The method for preparing a film comprises forming an AB alloy film subjected to oxidation treatment and forming a first metal A film, wherein the first metal A film is provided to contact with the AB alloy film subjected to oxidation treatment, wherein A is a first metal and B is a second metal, the second metal is selected from active metals in period 2 to period 4 of group 2, and the AB alloy film subjected to oxidation treatment is formed by forming an alloy film of a first metal A and a second metal B in the presence of an oxygen-containing gas.

Abstract translation: 本发明公开了一种薄膜的制造方法及阵列基板的制造方法以及阵列基板。 制备薄膜的方法包括：形成经过氧化处理的AB合金薄膜，并形成第一金属薄膜，其中第一金属薄膜设置成与经过氧化处理的AB合金膜接触，其中A是第一金属 B为第二金属，第二金属选自组2的周期2至周期4中的活性金属，经过氧化处理的AB合金膜通过形成第一金属A和第二金属 B在含氧气体存在下。

公开(公告)号：US12068355B2

公开(公告)日：2024-08-20

申请号：US17410677

申请日：2021-08-24

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jie Huang ,  Nianqi Yao ,  Kun Zhao

IPC: H01L27/146 ,  H01L27/12

CPC classification number: H01L27/14643 ,  H01L27/1214 ,  H01L27/14689

Abstract: An array substrate includes a substrate, the array substrate includes a display region and a detection region. And the detection region includes a thin film transistor located on the substrate and a photodiode located on one side of the thin film transistor away from the substrate, and the array substrate further includes a first inorganic protective layer, an organic protective layer and a second inorganic protective layer located between the thin film transistor and the photodiode. And the first inorganic protective layer, the organic protective layer and the second inorganic protective layer are stacked in sequence in a direction away from the substrate, and an orthographic projection of the photodiode on the substrate is within the range of the orthographic projection of the organic protective layer on the substrate.

公开(公告)号：US20230091604A1

公开(公告)日：2023-03-23

申请号：US17611156

申请日：2021-01-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jie Huang ,  Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Fengjuan Liu ,  Nianqi Yao ,  Kun Zhao ,  Tianmin Zhou ,  Jiushi Wang ,  Zhongpeng Tian

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

Abstract: The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include tin, and at least one of indium, gallium and zinc. The first protection layer includes praseodymium used to absorb photo-generated electrons from at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation.

公开(公告)号：US20230015871A1

公开(公告)日：2023-01-19

申请号：US17780877

申请日：2021-05-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jie Huang ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jiayu He ,  Nianqi Yao ,  Feng Qu ,  Xiaochun Xu

IPC: H01L29/786 ,  H01L27/12

Abstract: A thin film transistor, a manufacturing method thereof, an array substrate and an electronic device arc provided. The thin film transistor includes an active layer including multiple oxide layers which includes a channel layer, a transition layer and a first barrier layer, the channel layer is an layer with a highest carrier mobility, the channel layer is a crystalline or amorphous oxide layer, the transition layer is in direct contact with the channel layer, the first barrier layer is an outermost oxide layer, the first barrier layer and the transition layer are both crystalline oxide layers; a crystallization degree of the first barrier layer and a crystallization degree of the transition layer are greater than a crystallization degree of the channel layer, and a band gap of the first barrier layer and a band gap of the transition layer are larger than a band gap of the channel layer.

公开(公告)号：US20210351256A1

公开(公告)日：2021-11-11

申请号：US16475471

申请日：2018-08-10

Applicant: BOE Technology Group Co., Ltd.

Inventor： Shi Shu ,  Jiangnan Lu ,  Xing Zhang ,  Wei Liu ,  Zhengliang Li ,  Cuili Gai

IPC: H01L27/32 ,  H01L51/56

Abstract: The present application provides a display substrate having a plurality of subpixel areas. The display substrate includes a base substrate; a plurality of thin film transistors on the base substrate; and a plurality of semiconductor junctions configured to shield light from irradiating on active layers of the plurality of thin film transistors.

公开(公告)号：US20210217784A1

公开(公告)日：2021-07-15

申请号：US16761335

申请日：2019-11-21

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhengliang Li ,  Jiayu He ,  Hehe Hu ,  Wenlin Zhang ,  Song Liu ,  Xiaochen Ma ,  Nianqi Yao ,  Jie Huang

IPC: H01L27/144

Abstract: An array substrate, a method for manufacturing an array substrate, and a display panel are provided. The array substrate includes: a base substrate; a thin film transistor on the base substrate; and a PIN diode on a side of the thin film transistor away from the base substrate, in a direction running away the base substrate from the thin film transistor, the PIN diode including a first electrical conduction type semiconductor layer and an intrinsic semiconductor layer and a second electrical conduction type semiconductor layer stacked in sequence, wherein a material from which the first electrical conduction type semiconductor layer is made includes one or more of following materials: metal oxide, metal sulfide, metal selenide, metal nitride, metal phosphide, or metal arsenide.