公开(公告)号：US20180204755A1

公开(公告)日：2018-07-19

申请号：US15872543

申请日：2018-01-16

Applicant: Axcelis Technologies, Inc.

Inventor： John F. Baggett ,  Billy Benoit

IPC: H01L21/683 ,  H01L21/687 ,  H01L21/265 ,  H01L21/67 ,  H01L21/677

Abstract: A workpiece processing system and method comprises transferring a workpiece to a vacuum chamber. A heated chuck is configured to selectively clamp a workpiece to a clamping surface thereof, wherein the heated chuck is configured to selectively heat the clamping surface. A workpiece transfer apparatus has an end effector configured to transfer the workpiece to the heated chuck, wherein the workpiece rests on the end effector. A controller selectively position the workpiece with respect to the heated chuck via a control of the workpiece transfer apparatus, wherein the controller is configured to position the workpiece at a predetermined distance from the clamping surface, wherein the predetermined distance generally determines an amount of radiation received by the workpiece from the heated chuck, and wherein the controller is further configured to place the workpiece on the surface of the heated chuck via a control of the workpiece transfer apparatus.

公开(公告)号：US20180144940A1

公开(公告)日：2018-05-24

申请号：US15807652

申请日：2017-11-09

Applicant: Axcelis Technologies, Inc.

Inventor： Neil Colvin ,  Tseh-Jen Hsieh

IPC: H01L21/265 ,  H01J37/317

CPC classification number: H01L21/265 ,  H01J37/3171 ,  H01J2237/0213 ,  H01J2237/08 ,  H01J2237/31701

Abstract: Processes and systems for carbon ion implantation include utilizing phosphine as a co-gas with a carbon oxide gas in an ion source chamber. In one or more embodiments, carbon implantation with the phosphine co-gas is in combination with the lanthanated tungsten alloy ion source components, which advantageously results in minimal oxidation of the cathode and cathode shield, among other components within the ion source chamber.

公开(公告)号：US20180096875A1

公开(公告)日：2018-04-05

申请号：US15281540

申请日：2016-09-30

Applicant: Axcelis Technologies, Inc.

Inventor： Allan D. Weed

IPC: H01L21/683 ,  H01L21/265 ,  H01J37/20 ,  H01J37/317

CPC classification number: H01L21/6833 ,  H01J37/20 ,  H01J37/31 ,  H01J37/3171 ,  H01L21/265 ,  H01L21/67213 ,  H01L21/67751 ,  H01L21/6831 ,  H01L21/68707 ,  H01L21/68728 ,  H01L21/68785

Abstract: An electrostatic chuck for clamping workpieces having differing diameters is provided. A central electrostatic chuck member associated with a first workpiece and a first peripheral electrostatic chuck member associated with a second workpiece are provided. An elevator translates the first peripheral electrostatic chuck member with respect to central electrostatic chuck member between a retracted position and an extended position. In the retracted position, the first workpiece contacts only the first surface. In the extended position, the second workpiece contacts the first surface and the second surface. A first peripheral shield generally shields the second surface when the first peripheral electrostatic chuck member is in the retracted position. Additional peripheral electrostatic chuck members and peripheral shields can be added to accommodate additional workpiece diameters.

公开(公告)号：US20170362699A1

公开(公告)日：2017-12-21

申请号：US15627952

申请日：2017-06-20

Applicant: Axcelis Technologies, Inc.

Inventor： Dennis Elliott Kamenitsa ,  Richard J. Rzeszut ,  Fernando M. Silva ,  Neil K. Colvin

IPC: C23C16/12 ,  C01F7/48 ,  C01B7/13 ,  C23C16/448 ,  H01L21/306 ,  H01L21/02

CPC classification number: C23C16/12 ,  C01B7/135 ,  C01B31/36 ,  C01F7/48 ,  C23C14/48 ,  C23C16/448 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/08 ,  H01J2237/31705 ,  H01L21/02019 ,  H01L21/02167 ,  H01L21/26506 ,  H01L21/306

Abstract: An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. The ion source has a solid-state material source having aluminum iodide in a solid form. A solid source vaporizer vaporizes the aluminum iodide, defining gaseous aluminum iodide. An arc chamber forms a plasma from the gaseous aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A water vapor source further introduces water to react residual aluminum iodide to form hydroiodic acid, where the residual aluminum iodide and hydroiodic acid is evacuated from the system.

公开(公告)号：US09633885B2

公开(公告)日：2017-04-25

申请号：US14178719

申请日：2014-02-12

Applicant: Axcelis Technologies, Inc.

Inventor： William Davis Lee

IPC: H01T23/00 ,  H01L21/683 ,  H02N13/00

CPC classification number: H01L21/6833 ,  H01L21/6831 ,  H02N13/00

Abstract: An electrostatic clamp (ESC) has a clamping surface, and first and second pairs of electrodes. Each of the first pair of electrodes are associated with a respective third of the clamping surface, and each of the second pair of electrodes are associated with a respective sixth of the clamping surface. A peripheral region of each of the first and second pairs of electrodes spirals toward the periphery of the clamping surface. A DC mode connects one of each of the first and second pair of electrodes to a positive and the other one of the respective first and second pair of electrodes to a negative of a power supply. An AC mode electrically connects first, second, and third phase terminals of the power supply to one of the first pair of electrodes, the other one of the first pair of electrodes, and both of the second pair of electrodes, respectively.

公开(公告)号：US20160247664A1

公开(公告)日：2016-08-25

申请号：US14631066

申请日：2015-02-25

Applicant: Axcelis Technologies, Inc.

Inventor： Marvin Farley ,  Takao Sakase ,  Joseph Foley

IPC: H01J37/304 ,  H01J37/317

CPC classification number: H01J37/304 ,  H01J37/3171 ,  H01J37/32412 ,  H01J2237/0041 ,  H01J2237/0203 ,  H01J2237/24507 ,  H01J2237/304 ,  H01J2237/31701 ,  H01L22/14

Abstract: A charge monitor having a Langmuir probe is provided, wherein a positive and negative charge rectifier are operably coupled to the probe and configured to pass only a positive and negative charges therethrough, respectively. A positive current integrator is operably coupled to the positive charge rectifier, wherein the positive current integrator is biased via a positive threshold voltage, and wherein the positive current integrator is configured to output a positive dosage based, at least in part, on the positive threshold voltage. A negative current integrator is operably coupled to the negative charge rectifier, wherein the negative current integrator is biased via a negative threshold voltage, and wherein the negative current integrator is configured to output a negative dosage based, at least in part, on the negative threshold voltage. A positive charge counter and a negative charge counter are configured to respectively receive the output from the positive current integrator and negative current integrator in order to provide a respective cumulative positive charge value and cumulative negative charge value associated with the respective positive charge and negative charge.

Abstract translation: 提供具有朗缪尔探针的电荷监测器，其中正和负电荷整流器可操作地耦合到探针并且被配置为分别仅通过正和负电荷。 正电流积分器可操作地耦合到正电荷整流器，其中正电流积分器经由正阈值电压偏置，并且其中正电流积分器被配置为至少部分地基于正阈值输出正剂量 电压。 负电流积分器可操作地耦合到负电荷整流器，其中负电流积分器经由负阈值电压被偏置，并且其中负电流积分器被配置为基于至少部分地基于负阈值输出负剂量 电压。 配置正电荷计数器和负电荷计数器以分别接收来自正电流积分器和负电流积分器的输出，以便提供与相应的正电荷和负电荷相关联的相应的累积正电荷值和累积负电荷值。

公开(公告)号：US20160189913A1

公开(公告)日：2016-06-30

申请号：US14978776

申请日：2015-12-22

Applicant: Axcelis Technologies, Inc.

Inventor： Edward C. Eisner

IPC: H01J37/141 ,  H01J37/317 ,  H01J37/08

CPC classification number: H01J37/141 ,  H01J37/05 ,  H01J37/08 ,  H01J37/1472 ,  H01J37/1475 ,  H01J37/3171 ,  H01J2237/04922 ,  H01J2237/1415 ,  H01J2237/152

Abstract: A combined scanning and focusing magnet for an ion implantation system is provided. The combined scanning and focusing magnet has a yoke having a high magnetic permeability. The yoke defines a hole configured to pass an ion beam therethrough. One or more scanner coils operably are coupled to the yoke and configured to generate a time-varying predominantly dipole magnetic field when electrically coupled to a power supply. One or more focusing coils are operably coupled to the yoke and configured to generate a predominantly multipole magnetic field, wherein the predominantly multipole magnetic field is one of static or time-varying.

Abstract translation: 提供了用于离子注入系统的组合扫描和聚焦磁体。 组合的扫描和聚焦磁体具有磁导率高的磁轭。 轭限定了构造成使离子束通过其中的孔。 一个或多个扫描器线圈可操作地耦合到磁轭并且被配置为当电耦合到电源时产生随时间变化的主要偶极磁场。 一个或多个聚焦线圈可操作地耦合到磁轭并且被配置为产生主要是多极磁场，其中主要是多极磁场是静态或时变之一。

公开(公告)号：US20150200073A1

公开(公告)日：2015-07-16

申请号：US14584252

申请日：2014-12-29

Applicant: Axcelis Technologies, Inc.

Inventor： Causon Ko-Chuan Jen ,  Marvin Farley

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/302 ,  H01J2237/047 ,  H01J2237/24514 ,  H01J2237/30483

Abstract: An ion implantation system and method for implanting ions at varying energies across a workpiece is provided. The system comprises an ion source configured to ionize a dopant gas into a plurality of ions and to form an ion beam. A mass analyzer is positioned downstream of the ion source and configured to mass analyze the ion beam. A deceleration/acceleration stage is positioned downstream of the mass analyzer. An energy filter may form part of the deceleration/acceleration stage or may positioned downstream of the deceleration/acceleration stage. An end station is provided having a workpiece support associated therewith for positioning the workpiece before the ion beam is also provided. A scanning apparatus is configured to scan one or more of the ion beam and workpiece support with respect to one another. One or more power sources are operably coupled to one or more of the ion source, mass analyzer, deceleration/acceleration stage, and energy filter. A controller is configured to selectively vary one or more voltages respectively supplied to one or more of the deceleration/acceleration stage and the energy filter concurrent with the scanning of the ion beam and/or workpiece support, wherein the selective variation of the one or more voltages is based, at least in part, on a position of the ion beam with respect to the workpiece support.

Abstract translation: 提供了一种用于在工件上以不同能量注入离子的离子注入系统和方法。 该系统包括被配置为将掺杂剂气体离子化成多个离子并形成离子束的离子源。 质量分析器位于离子源的下游并且被配置成质量分析离子束。 减速/加速阶段位于质量分析仪的下游。 能量过滤器可以形成减速/加速阶段的一部分，或者可以位于减速/加速阶段的下游。 设置终端站，其具有与其相关联的工件支撑件，用于在还提供离子束之前定位工件。 扫描装置被配置为相对于彼此扫描一个或多个离子束和工件支撑件。 一个或多个电源可操作地耦合到离子源，质量分析器，减速/加速阶段和能量过滤器中的一个或多个。 控制器被配置为选择性地改变与扫描离子束和/或工件支撑件同时提供给减速/加速阶段和能量过滤器中的一个或多个的一个或多个电压，其中一个或多个 电压至少部分地基于离子束相对于工件支撑件的位置。

公开(公告)号：US20150179393A1

公开(公告)日：2015-06-25

申请号：US14135754

申请日：2013-12-20

Applicant: Axcelis Technologies, Inc.

Inventor： Neil Colvin ,  Tseh-Jen Hsieh

IPC: H01J37/08

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/0213 ,  H01J2237/0268 ,  H01J2237/082 ,  H01J2237/31705

Abstract: An ion source chamber for ion implantation system includes a housing that at least partially bounds an ionization region through which high energy electrons move from a cathode to ionize gas molecules injected into an interior of the housing; a liner section defining one or more interior walls of the housing interior, wherein each liner section includes a interiorly facing surface exposed to the ionization region during operation the ion implantation system; a cathode shield disposed about the cathode; a repeller spaced apart from the cathode; a plate including a source aperture for discharging ions from the ion source chamber; wherein at least one of the repeller, the liner section, the cathode shield; the plate, or an insert in the plate defining the source aperture comprise silicon carbide, wherein the silicon carbide is a non-stoichiometric sintered material having excess carbon.

Abstract translation: 用于离子注入系统的离子源室包括壳体，该壳体至少部分地界定电离区域，高能电子通过该电离区域从阴极移动到电离注入壳体内部的气体分子; 限定所述壳体内部的一个或多个内壁的衬里部分，其中每个衬里部分包括在所述离子注入系统的操作期间暴露于所述电离区域的面向内的表面; 围绕阴极设置的阴极屏蔽; 与阴极间隔开的推斥器; 包括用于从离子源室排出离子的源孔的板; 其中所述推斥板，所述衬套部分，所述阴极罩中的至少一个; 该板或限定源孔的板中的插入物包括碳化硅，其中碳化硅是具有过量碳的非化学计量烧结材料。

公开(公告)号：US20040099283A1

公开(公告)日：2004-05-27

申请号：US10065861

申请日：2002-11-26

Applicant: Axcelis Technologies, Inc.

Inventor： Carlo Waldfried ,  Qingyaun Han ,  John Hallock ,  Ivan Berry ,  Ari Margolis ,  Orlando Escorcia

IPC: C25F001/00

CPC classification number: H01L21/31058 ,  G03F7/42 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116

Abstract: A method for drying and removing contaminants from a low-k dielectric film of an integrated circuit wafer, the method comprising exposing the low k dielectric layer to photons; and simultaneously with, prior to, or subsequent to the photon exposure, exposing the substrate to a process effective to remove the contaminants without causing degradation of the low k dielectric layer, wherein the process is selected from the group consisting of a heat process, a vacuum process, an oxygen free plasma process, and combinations thereof.

Abstract translation: 一种用于从集成电路晶片的低k电介质膜干燥和去除污染物的方法，所述方法包括将低k电介质层暴露于光子; 并且与光子曝光同时，在光子曝光之前或之后，使基板暴露于有效除去污染物而不引起低k电介质层退化的过程，其中该工艺选自加热工艺， 真空工艺，无氧等离子体工艺及其组合。