公开(公告)号：US20030102085A1

公开(公告)日：2003-06-05

申请号：US10336270

申请日：2003-01-03

Applicant: Axcelis Technologies, Inc.

Inventor： Joel Penelon ,  Ivan Berry

IPC: H01L021/00

CPC classification number: C23C16/517 ,  C23C16/453 ,  H05H1/46 ,  H05H1/48 ,  H05H2001/4607

Abstract: A method and apparatus for generating a plasma in a gas using a thermal source and a heat source in a common reaction zone. A process gas is flowed to a reaction zone and heated with a thermal energy source. Within the same reaction zone, a current is passed in the gas to generate a plasma within the gas. The plasma is directed to a substrate for treatment. The substrate may be a silicon wafer as part of an etching, ashing, wafer cleaning, and chemical vapor deposition.

公开(公告)号：US20010027016A1

公开(公告)日：2001-10-04

申请号：US09876318

申请日：2001-06-07

Applicant: Axcelis Technologies, Inc.

Inventor： Qingyan Han ,  Ivan Berry ,  Palani Sakthivel ,  Ricky Ruffin ,  Mahmoud Dahimene

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01L21/02071 ,  G03F7/427 ,  H01J37/32192 ,  H01J37/32357 ,  H01J2237/3342 ,  H01L21/02063 ,  H01L21/31138 ,  H01L21/76813 ,  Y10S438/963

Abstract: A method for stripping photoresist and/or removing post etch residues from an exposed low k dielectric layer of a semiconductor wafer in the presence or absence of copper. The method comprises creating an oxygen free plasma by subjecting an oxygen free gas to an energy source to generate the plasma having electrically neutral and charged particles. The charged particles are then selectively removed from the plasma. The electrically neutral particles react with the photoresist and/or post etch residues to form volatile gases which are then removed from the wafer by a gas stream. The oxygen free, plasma gas composition for stripping photoresist and/or post etch residues comprises a hydrogen bearing gas and a fluorine bearing wherein the fluorine bearing gas is less than about 10 percent by volume of the total gas composition.

Abstract translation: 在存在或不存在铜时，从半导体晶片的暴露的低k电介质层剥离光刻胶和/或去除后蚀刻残留物的方法。 该方法包括通过使无氧气体经受能量源产生具有电中性和带电粒子的等离子体来产生无氧等离子体。 然后将带电粒子从等离子体中选择性地除去。 电中性颗粒与光致抗蚀剂和/或后蚀刻残余物反应以形成挥发性气体，然后通过气流从晶片中除去。 用于剥离光致抗蚀剂和/或后蚀刻残余物的无氧等离子体气体组合物包括含氢气体和氟轴承，其中含氟气体小于总气体组成的约10体积％。

公开(公告)号：US20020069828A1

公开(公告)日：2002-06-13

申请号：US09732064

申请日：2000-12-07

Applicant: Axcelis Technologies, Inc.

Inventor： Joel Penelon ,  Ivan Berry

IPC: C23C016/00

CPC classification number: C23C16/517 ,  C23C16/453 ,  H05H1/46 ,  H05H1/48 ,  H05H2001/4607

Abstract: A method and apparatus for generating a plasma in a gas using a thermal source and a heat source in a common reaction zone. A process gas is flowed to a reaction zone and heated with a thermal energy source. Within the same reaction zone, a current is passed in the gas to generate a plasma within the gas. The plasma is directed to a substrate for treatment. The substrate may be a silicon wafer as part of an etching, ashing, wafer cleaning, and chemical vapor deposition.

Abstract translation: 一种用于在公共反应区中使用热源和热源在气体中产生等离子体的方法和装置。 将工艺气体流入反应区并用热能源加热。 在相同的反应区内，在气体中通入电流，以在气体内产生等离子体。 将等离子体导向基底进行治疗。 衬底可以是作为蚀刻，灰化，晶片清洁和化学气相沉积的一部分的硅晶片。

公开(公告)号：US20040099283A1

公开(公告)日：2004-05-27

申请号：US10065861

申请日：2002-11-26

Applicant: Axcelis Technologies, Inc.

Inventor： Carlo Waldfried ,  Qingyaun Han ,  John Hallock ,  Ivan Berry ,  Ari Margolis ,  Orlando Escorcia

IPC: C25F001/00

CPC classification number: H01L21/31058 ,  G03F7/42 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116

Abstract: A method for drying and removing contaminants from a low-k dielectric film of an integrated circuit wafer, the method comprising exposing the low k dielectric layer to photons; and simultaneously with, prior to, or subsequent to the photon exposure, exposing the substrate to a process effective to remove the contaminants without causing degradation of the low k dielectric layer, wherein the process is selected from the group consisting of a heat process, a vacuum process, an oxygen free plasma process, and combinations thereof.

Abstract translation: 一种用于从集成电路晶片的低k电介质膜干燥和去除污染物的方法，所述方法包括将低k电介质层暴露于光子; 并且与光子曝光同时，在光子曝光之前或之后，使基板暴露于有效除去污染物而不引起低k电介质层退化的过程，其中该工艺选自加热工艺， 真空工艺，无氧等离子体工艺及其组合。