公开(公告)号：US20010027016A1

公开(公告)日：2001-10-04

申请号：US09876318

申请日：2001-06-07

Applicant: Axcelis Technologies, Inc.

Inventor： Qingyan Han ,  Ivan Berry ,  Palani Sakthivel ,  Ricky Ruffin ,  Mahmoud Dahimene

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01L21/02071 ,  G03F7/427 ,  H01J37/32192 ,  H01J37/32357 ,  H01J2237/3342 ,  H01L21/02063 ,  H01L21/31138 ,  H01L21/76813 ,  Y10S438/963

Abstract: A method for stripping photoresist and/or removing post etch residues from an exposed low k dielectric layer of a semiconductor wafer in the presence or absence of copper. The method comprises creating an oxygen free plasma by subjecting an oxygen free gas to an energy source to generate the plasma having electrically neutral and charged particles. The charged particles are then selectively removed from the plasma. The electrically neutral particles react with the photoresist and/or post etch residues to form volatile gases which are then removed from the wafer by a gas stream. The oxygen free, plasma gas composition for stripping photoresist and/or post etch residues comprises a hydrogen bearing gas and a fluorine bearing wherein the fluorine bearing gas is less than about 10 percent by volume of the total gas composition.

Abstract translation: 在存在或不存在铜时，从半导体晶片的暴露的低k电介质层剥离光刻胶和/或去除后蚀刻残留物的方法。 该方法包括通过使无氧气体经受能量源产生具有电中性和带电粒子的等离子体来产生无氧等离子体。 然后将带电粒子从等离子体中选择性地除去。 电中性颗粒与光致抗蚀剂和/或后蚀刻残余物反应以形成挥发性气体，然后通过气流从晶片中除去。 用于剥离光致抗蚀剂和/或后蚀刻残余物的无氧等离子体气体组合物包括含氢气体和氟轴承，其中含氟气体小于总气体组成的约10体积％。