公开(公告)号：US20030102085A1

公开(公告)日：2003-06-05

申请号：US10336270

申请日：2003-01-03

Applicant: Axcelis Technologies, Inc.

Inventor： Joel Penelon ,  Ivan Berry

IPC: H01L021/00

CPC classification number: C23C16/517 ,  C23C16/453 ,  H05H1/46 ,  H05H1/48 ,  H05H2001/4607

Abstract: A method and apparatus for generating a plasma in a gas using a thermal source and a heat source in a common reaction zone. A process gas is flowed to a reaction zone and heated with a thermal energy source. Within the same reaction zone, a current is passed in the gas to generate a plasma within the gas. The plasma is directed to a substrate for treatment. The substrate may be a silicon wafer as part of an etching, ashing, wafer cleaning, and chemical vapor deposition.

公开(公告)号：US20020069828A1

公开(公告)日：2002-06-13

申请号：US09732064

申请日：2000-12-07

Applicant: Axcelis Technologies, Inc.

Inventor： Joel Penelon ,  Ivan Berry

IPC: C23C016/00

CPC classification number: C23C16/517 ,  C23C16/453 ,  H05H1/46 ,  H05H1/48 ,  H05H2001/4607

Abstract: A method and apparatus for generating a plasma in a gas using a thermal source and a heat source in a common reaction zone. A process gas is flowed to a reaction zone and heated with a thermal energy source. Within the same reaction zone, a current is passed in the gas to generate a plasma within the gas. The plasma is directed to a substrate for treatment. The substrate may be a silicon wafer as part of an etching, ashing, wafer cleaning, and chemical vapor deposition.

Abstract translation: 一种用于在公共反应区中使用热源和热源在气体中产生等离子体的方法和装置。 将工艺气体流入反应区并用热能源加热。 在相同的反应区内，在气体中通入电流，以在气体内产生等离子体。 将等离子体导向基底进行治疗。 衬底可以是作为蚀刻，灰化，晶片清洁和化学气相沉积的一部分的硅晶片。