公开(公告)号：US11795575B2

公开(公告)日：2023-10-24

申请号：US18046946

申请日：2022-10-17

申请人： Government of the United States, as represented by the Secretary of the Air Force

发明人： Vladimir Tassev

IPC分类号： C30B25/04 ,  H01L21/02 ,  C30B29/44 ,  C30B29/40 ,  C30B25/18 ,  G02F1/355 ,  C30B29/42 ,  C30B29/48 ,  C30B25/02 ,  H01L31/18

CPC分类号： C30B25/04 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  C30B29/42 ,  C30B29/44 ,  C30B29/48 ,  G02F1/3556 ,  H01L21/024 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02293 ,  H01L21/02387 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02398 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02538 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02658 ,  H01L31/1828 ,  G02F1/3558

摘要： A method of performing HVPE heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and ternary-forming gasses (V/VI group precursor), to form a heteroepitaxial growth of a binary, ternary, and/or quaternary compound on the substrate; wherein the carrier gas is Hz, wherein the first precursor gas is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the ternary-forming gasses comprise at least two or more of AsH3 (arsine), PH3 (phosphine), H2Se (hydrogen selenide), HzTe (hydrogen telluride), SbH3 (hydrogen antimonide, or antimony tri-hydride, or stibine), H2S (hydrogen sulfide), NH3 (ammonia), and HF (hydrogen fluoride); flowing the carrier gas over the Group II/III element; exposing the substrate to the ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio); and changing the 1tf:2tf ratio over time.

公开(公告)号：US11761115B2

公开(公告)日：2023-09-19

申请号：US17937787

申请日：2022-10-04

申请人： Government of the United States, as represented by the Secretary of the Air Force

发明人： Vladimir Tassev

IPC分类号： C30B25/04 ,  H01L21/02 ,  C30B29/44 ,  C30B29/40 ,  C30B25/18 ,  G02F1/355 ,  C30B29/42 ,  C30B29/48 ,  C30B25/02 ,  H01L31/18

CPC分类号： C30B25/04 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  C30B29/42 ,  C30B29/44 ,  C30B29/48 ,  G02F1/3556 ,  H01L21/024 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02293 ,  H01L21/02387 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02398 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02538 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02658 ,  H01L31/1828 ,  G02F1/3558

摘要： A method of performing heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and a second precursor gas, to form a heteroepitaxial growth of one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN on the substrate; wherein the substrate comprises one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN; wherein the carrier gas is Hz, wherein the first precursor is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the second precursor is one of AsH3 (arsine), PH3 (phosphine), H2Se (hydrogen selenide), H2Te (hydrogen telluride), SbH3 (hydrogen antimonide), H2S (hydrogen sulfide), and NH3 (ammonia). The process may be an HVPE (hydride vapor phase epitaxy) process.

公开(公告)号：US20160035931A1

公开(公告)日：2016-02-04

申请号：US14426825

申请日：2013-09-10

申请人： Bizhigit Erzhigitovich ZHURTANOV ,  LIMITED LIABILITY COMPANY "LED MICROSENSOR NT"

发明人： Bizhigit Erzhigitovich ZHURTANOV ,  Nikolay Deev STOYANOV

IPC分类号： H01L33/00 ,  H01L33/30 ,  H01L33/12

CPC分类号： H01L33/0025 ,  H01L21/02398 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02623 ,  H01L33/0062 ,  H01L33/12 ,  H01L33/30

摘要： The provided heterostructure includes a substrate containing GaSb, a buffer layer which contains a GaInAsSb solid solution, the buffer layer being disposed over the substrate; an active layer which contains a GaInAsSb solid solution, the active layer being disposed over the buffer layer; a confining layer for localizing major carriers, the confining layer containing a AlGaAsSb solid solution and being disposed over the active layer; a contact layer containing GaSb, the contact layer being disposed over the confining layer, wherein the buffer layer contains less indium (In) than the active layer. The provided heterostructure is characterized by increased quantum efficiency. Also a method of producing the heterostructure and a light emitting diode based on the heterostructure are provided. Light emitting diodes on the basis of the provided heterostructure emit in a mid-infrared spectral range of 1.8-2.4 μm.

摘要翻译： 所提供的异质结构包括含有GaSb的衬底，包含GaInAsSb固溶体的缓冲层，缓冲层设置在衬底上; 包含GaInAsSb固溶体的有源层，所述有源层设置在所述缓冲层上; 用于定位主要载体的限制层，所述限制层含有AlGaAsSb固溶体并且设置在有源层上; 包含GaSb的接触层，所述接触层设置在所述约束层上，其中所述缓冲层包含比所述有源层少的铟（In）。 所提供的异质结构的特征在于增加的量子效率。 还提供了一种制造异质结构的方法和基于异质结构的发光二极管。 基于所提供的异质结构的发光二极管在1.8-2.4μm的中红外光谱范围内发射。

公开(公告)号：US20120058595A1

公开(公告)日：2012-03-08

申请号：US13280164

申请日：2011-10-24

申请人： John W. Sherohman ,  Jick Hong Yee ,  Arthur W. Combs, III

发明人： John W. Sherohman ,  Jick Hong Yee ,  Arthur W. Combs, III

IPC分类号： H01L31/18

CPC分类号： H01L31/0304 ,  H01L21/02398 ,  H01L21/02549 ,  H01L21/02562 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/03046 ,  H01L31/035209 ,  H01L31/035218 ,  H01L31/036 ,  H01L31/073 ,  H01L31/0735 ,  H01L31/075 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/1864 ,  Y02E10/543 ,  Y02E10/544 ,  Y02E10/548 ,  Y02P70/521

摘要： Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.

摘要翻译： 电子设备质量通过受控大气退火生产的铝锑（AlSb）基单晶被用于太阳能电池应用的各种配置。 像GaAs基太阳能电池器件那样，如本文公开的基于AlSb的太阳能电池器件提供将太阳能直接转换成电力。

公开(公告)号：US08076700B2

公开(公告)日：2011-12-13

申请号：US12476298

申请日：2009-06-02

申请人： Richard Magno ,  Mario Ancona ,  John Bradley Boos ,  James G Champlain ,  Harvey S Newman

发明人： Richard Magno ,  Mario Ancona ,  John Bradley Boos ,  James G Champlain ,  Harvey S Newman

IPC分类号： H01L29/207 ,  H01L21/203

CPC分类号： H01L29/205 ,  H01L21/02398 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02576 ,  H01L21/02631 ,  H01L29/201 ,  H01L29/207 ,  H01L29/861

摘要： This disclosure describes a semiconductor device that can be used as a mixer at RF frequencies extending from a few tens of GHz into the THz frequency range. The device is composed of narrow bandgap semiconductors grown by solid source molecular beam epitaxy. The device can comprise a GaSb substrate, a AlSb layer on the GaSb substrate, a In0.69Al0.31As0.41Sb0.59 layer, on the AlSb layer and wherein the In0.69Al0.31As0.41Sb0.59 comprises varying levels of Te doping, a In0.27Ga0.73Sb layer on the In0.69Al0.31As0.41 Sb0.59 layer, wherein the In0.27Ga0.73Sb layer is Be doped, wherein the first section of the In0.69Al0.31As0.41Sb0.59 layer has is Te doped, wherein the second section of the In0.69Al0.31As0.41Sb0.59 layer has a grade in Te concentration, and wherein the third section of the In0.69Al0.31As0.41Sb0.59 layer is Te doped.

摘要翻译： 本公开描述了一种半导体器件，其可以用作从几十GHz到THz频率范围的RF频率的混频器。 该器件由固体源分子束外延生长的窄带隙半导体组成。 该器件可以包括GaSb衬底，GaSb衬底上的AlSb层，AlSb层上的In0.69Al0.31As0.41Sb0.59层，其中In0.69Al0.31As0.41Sb0.59包含不同水平的Te掺杂 ，In0.69Al0.31As0.41 Sb0.59层的In0.27Ga0.73Sb层，其中In0.27Ga0.73Sb层被掺杂，其中In0.69Al0.31As0.41Sb0.59层的第一段 已掺杂Te，其中In0.69Al0.31As0.41Sb0.59层的第二段具有Te浓度的等级，其中In0.69Al0.31As0.41Sb0.59层的第三段为Te掺杂。

公开(公告)号：US20110272672A1

公开(公告)日：2011-11-10

申请号：US13102863

申请日：2011-05-06

申请人： Yiqiao Chen ,  Peter Chow

发明人： Yiqiao Chen ,  Peter Chow

IPC分类号： H01L29/15

CPC分类号： H01L29/151 ,  B82Y10/00 ,  B82Y20/00 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02398 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/02549 ,  H01L31/035236

摘要： An embodiment of the present invention improves the fabrication and operational characteristics of a type-II superlattice material. Layers of indium arsenide and gallium antimonide comprise the bulk of the superlattice structure. One or more layers of indium antimonide are added to unit cells of the superlattice to provide a further degree of freedom in the design for adjusting the effective bandgap energy of the superlattice. One or more layers of gallium arsenide are added to unit cells of the superlattice to counterbalance the crystal lattice strain forces introduced by the aforementioned indium antimonide layers.

摘要翻译： 本发明的一个实施例改进了II型超晶格材料的制造和操作特性。 砷化铟和镓锑的层包括超晶格结构的大部分。 将一层或多层锑锑添加到超晶格的单元电池中，以在设计中提供进一步的自由度来调整超晶格的有效带隙能量。 将一层或多层砷化镓添加到超晶格的单元电池中，以平衡由上述铟锑化物层引入的晶格应变力。

公开(公告)号：US20080067547A1

公开(公告)日：2008-03-20

申请号：US11521012

申请日：2006-09-14

申请人： Joshua I. Bergman ,  Berinder Brar ,  Amal Ikhlassi ,  Gabor Nagy ,  Gerard J. Sullivan

发明人： Joshua I. Bergman ,  Berinder Brar ,  Amal Ikhlassi ,  Gabor Nagy ,  Gerard J. Sullivan

IPC分类号： H01L29/739

CPC分类号： H01L29/7783 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02398 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02549 ,  H01L29/201 ,  H01L29/66462

摘要： A high electron mobility transistor having a first and a second layer with a ternary metamorphic buffer between the first and second layers, the first layer composed of a first material and the second layer composed of a second material, the first and second material having different lattice constants.

摘要翻译： 一种高电子迁移率晶体管，具有在第一和第二层之间具有三元变质缓冲层的第一和第二层，第一层由第一材料构成，第二层由第二材料组成，第一和第二材料具有不同的晶格 常数。

公开(公告)号：US20070137700A1

公开(公告)日：2007-06-21

申请号：US11305381

申请日：2005-12-16

申请人： John Sherohman ,  Jick Yee ,  Arthur Coombs

发明人： John Sherohman ,  Jick Yee ,  Arthur Coombs

IPC分类号： H01L31/00

CPC分类号： H01L31/036 ,  H01L21/02398 ,  H01L21/02549 ,  H01L21/02562 ,  H01L31/03046 ,  Y02E10/544

摘要： For the first time, electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.

摘要翻译： 第一次，通过受控大气退火生产的电子器件质量的铝锑（AlSb）基单晶被用于太阳能电池应用的各种配置。 像GaAs基太阳能电池器件那样，如本文公开的基于AlSb的太阳能电池器件提供将太阳能直接转换成电力。

公开(公告)号：US5449561A

公开(公告)日：1995-09-12

申请号：US916050

申请日：1992-07-17

申请人： Terry D. Golding ,  John H. Miller, Jr.

发明人： Terry D. Golding ,  John H. Miller, Jr.

IPC分类号： C30B25/00 ,  C30B23/02 ,  C30B25/02 ,  H01L21/20 ,  H01L21/203 ,  H01L21/285 ,  H01L29/205 ,  H01L29/68 ,  B32B15/04

CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02398 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02466 ,  H01L21/02491 ,  H01L21/02507 ,  H01L21/02516 ,  H01L21/02549 ,  H01L21/02609 ,  H01L21/28581 ,  Y10S148/072 ,  Y10S148/115 ,  Y10T428/31678

摘要： The present invention provides for the fabrication of single layer semimetal/semiconductor heterostructures and multilayer semimetal/semiconductor structures. Each semimetal/semiconductor layer fabricated in accordance with the present invention has compatible crystal symmetry across the heterojunction between a semimetal and a semiconductor. A single layer semimetal/semiconductor structure is fabricated by growing a rhombohedral semimetal in a [111] direction on a substrate material having a (111) orientation, and then growing a zincblende semiconductor in a [111] direction on the semimetal. A multilayer semimetal/semiconductor structure may be grown from the single layer semimetal/semiconductor structure by growing an additional rhombohedral semimetal layer in a [111] direction on the preceding semiconductor grown, then growing an additional zincblende semiconductor layer in a [111] direction on the additional semimetal layer, and then repeating this process as many times as desired. Each semimetal to be sandwiched between semiconductors in the multilayer semimetal/semiconductor structure may be grown thin enough that the semimetal is converted into a semiconductor.

摘要翻译： 本发明提供单层半金属/半导体异质结构和多层半金属/半导体结构的制造。 根据本发明制造的每个半金属/半导体层在半金属和半导体之间的异质结上具有相容的晶体对称性。 通过在具有（111）取向的衬底材料上沿[111]方向生长菱形半金属，然后在半金属上沿[111]方向生长锌辉石半导体，制造单层半金属/半导体结构。 可以从单层半金属/半导体结构生长多层半金属/半导体结构，通过在先前生长的半导体上沿[111]方向生长另外的菱面体半金属层，然后在[111]方向上生长另外的锌辉石半导体层 附加的半金属层，然后根据需要重复该过程多次。 夹在多层半金属/半导体结构中的半导体之间的每个半金属可以生长得足够薄以使半金属转变为半导体。

公开(公告)号：US5094974A

公开(公告)日：1992-03-10

申请号：US488578

申请日：1990-02-28

申请人： Frank J. Grunthaner ,  John K. Liu ,  Bruce R. Hancock

发明人： Frank J. Grunthaner ,  John K. Liu ,  Bruce R. Hancock

IPC分类号： H01L21/20 ,  H01L21/203

CPC分类号： H01L21/0237 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02398 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02631 ,  Y10S148/022 ,  Y10S148/025 ,  Y10S148/169

摘要： For the growth of strain-layer materials and high quality single and multiple quantum wells, the instantaneous control of growth front stoichiometry is critical. The process of the invention adjusts the offset or phase of MBE control shutters to program the instantaneous arrival or flux rate of In and As.sub.4 reactants to grow InAs. The interrupted growth of first In, then As.sub.4, is also a key feature.

摘要翻译： 对于应变层材料和高质量的单个和多个量子阱的生长，生长前部化学计量的瞬时控制是至关重要的。 本发明的方法调整了MBE控制百叶窗的偏移或相位，以编程In和As4反应物的瞬时到达或通量速率来增长InAs。 第一个In的中断增长，然后是As4，也是一个关键特征。