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    MBE growth technology for high quality strained III-V layers
    3.
    发明授权
    MBE growth technology for high quality strained III-V layers 失效
    用于高品质应变III-V层的MBE增长技术

    公开(公告)号：US5091335A

    公开(公告)日：1992-02-25

    申请号：US506137

    申请日：1990-03-30

    申请人： Frank J. Grunthaner ,  John K. Liu ,  Bruce R. Hancock

    发明人： Frank J. Grunthaner ,  John K. Liu ,  Bruce R. Hancock

    IPC分类号： H01L21/20 ,  H01L21/203

    CPC分类号： H01L21/02381 ,  H01L21/02395 ,  H01L21/02398 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02631 ,  Y10S148/005 ,  Y10S148/018 ,  Y10S438/938

    摘要： III-V films are grown on large automatically perfect terraces of III-V substrates which have a different lattice constant, with temperature and Group II and V arrival rates chosen to give a Group III element stable surface. The growth is pulsed to inhibit Group III metal accumulation to low temperature, and to permit the film to relax to equilibrium. The method of the invention 1) minimizes starting step density on sample surface; 2) deposits InAs and GaAs using an interrupted growth mode (0.25 to 2 mono-layers at a time); 3) maintains the instantaneous surface stoichiometry during growth (As-stable for GaAs, In-stable for InAs); and 4) uses time-resolved RHEED to achieve aspects (1)-14 (3).

    摘要翻译： III-V膜生长在具有不同晶格常数的III-V衬底的大型自动完美梯田上，其温度选择为II族和V族到达率，以提供III族元素稳定的表面。 脉冲生长以抑制III族金属积聚到低温，并允许膜松弛至平衡。 本发明的方法1）最小化样品表面的起始步骤密度; 2）使用中断生长模式沉积InAs和GaAs（每次0.25至2个单层）; 3）在生长过程中保持瞬时表面化学计量（GaAs稳定，InAs稳定）; 和4）使用时间分辨的RHEED来实现方面（1）-14（3）。

    SUPERPIXEL MULTI-WAVEBAND PHOTODETECTOR ARRAY FOR REMOTE TEMPERATURE MEASUREMENT
    4.
    发明申请
    SUPERPIXEL MULTI-WAVEBAND PHOTODETECTOR ARRAY FOR REMOTE TEMPERATURE MEASUREMENT 审中-公开
    用于远程温度测量的SUPERPIXEL多波段光电转换器阵列

    公开(公告)号：US20110176577A1

    公开(公告)日：2011-07-21

    申请号：US12633714

    申请日：2009-12-08

    申请人： Sumith V. Bandara ,  Sarath D. Gunapala ,  John K. Liu ,  Robert C. Stirbl ,  Daniel W. Wilson ,  David Z. Ting

    发明人： Sumith V. Bandara ,  Sarath D. Gunapala ,  John K. Liu ,  Robert C. Stirbl ,  Daniel W. Wilson ,  David Z. Ting

    IPC分类号： G01J5/00

    CPC分类号： G01J5/60 ,  G01J3/36 ,  G01J5/08 ,  G01J5/0803 ,  G01J2005/0048 ,  G01J2005/0077

    摘要： A multi-waveband temperature sensor array, in which each superpixel (e.g., 2×2 pixel cell) operates at a distinct thermal infrared (IR) waveband (e.g. four wavebands) is disclosed. Using an example high spatial resolution, four-band thermal IR band photodetector array, accurate temperature measurements on the surface of an object can be made without prior knowledge of the object emissivity. The multiband photodetector may employ intersubband transition in III-V semiconductor-based quantum layered structures where each photodetector stack absorbs photons within the specified wavelength band while allowing the transmission of photons in other spectral bands, thus efficiently permitting multiband detection. This produces multiple, spectrally resolved images of a scene that are recorded simultaneously in a single snapshot of the FPA. From the multispectral images and calibration information about the system, computational algorithms are used to produce the surface temperature map of a target.

    摘要翻译： 公开了一种多波段温度传感器阵列，其中每个超像素（例如，2×2像素单元）在不同的热红外（IR）波段（例如四个波段）下操作。 使用示例性高空间分辨率，四波段热IR波段光电探测器阵列，可以在物体表面上准确地进行温度测量，而无需事先了解物体发射率。 多频带光电探测器可以在基于III-V半导体的量子分层结构中使用跨带间跃迁，其中每个光电探测器叠层吸收特定波长带内的光子，同时允许其他光谱带中的光子传输，从而有效地允许多频带检测。 这产生了在FPA的单个快照中同时记录的场景的多个光谱解析图像。 从多光谱图像和关于系统的校准信息，使用计算算法来产生目标的表面温度图。

    Polarization-sensitive quantum well infrared photodetector focal plane array
    5.
    发明授权
    Polarization-sensitive quantum well infrared photodetector focal plane array 有权
    偏振敏感量子阱红外光电探测器焦平面阵列

    公开(公告)号：US07745815B2

    公开(公告)日：2010-06-29

    申请号：US11653785

    申请日：2007-01-16

    申请人： Sumith V. Bandara ,  Sarath Gunapala ,  John K. Liu

    发明人： Sumith V. Bandara ,  Sarath Gunapala ,  John K. Liu

    IPC分类号： H01L29/06 ,  H01L31/072 ,  H01L31/109 ,  H01L33/00

    CPC分类号： H01L27/14652 ,  G01J4/04 ,  H01L27/14625 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/1035

    摘要： A quantum well infrared photodetector (QWIP) focal plane array having structures, each structure having stacked layers of quantum wells and a reflective grating to provide polarization sensitivity. The reflective grating is etched to provide electrical contacts for individual pixels. The reflective gratings comprise grooves, where the grooves for a particular structure run in a particular direction to provide polarization sensitivity. Each structure may comprise groups of quantum well layers, each group sensitive to a particular frequency band. By shorting out unwanted quantum well layers, and by forming the reflective gratings to come into contact with the quantum well layers having a particular frequency band sensitivity, the pixels in the QWIP focal plane array may provide frequency and polarization information.

    摘要翻译： 具有结构的量子阱红外光电检测器（QWIP）焦平面阵列，每个结构具有层叠的量子阱层和反射光栅以提供极化灵敏度。 蚀刻反射光栅以为单个像素提供电触点。 反射光栅包括凹槽，其中用于特定结构的凹槽沿特定方向运行以提供极化灵敏度。 每个结构可以包括量子阱层组，每个组对特定频带敏感。 通过短路不需要的量子阱层，并且通过形成反射光栅与具有特定频带灵敏度的量子阱层接触，QWIP焦平面阵列中的像素可以提供频率和极化信息。

    Infrared radiation-detecting device
    7.
    发明授权
    Infrared radiation-detecting device 失效
    红外辐射检测装置

    公开(公告)号：US06211529B1

    公开(公告)日：2001-04-03

    申请号：US08785350

    申请日：1997-01-17

    申请人： Sarath Gunapala ,  John K. Liu ,  Jin S. Park ,  True-Lon Lin ,  Mani Sundaram

    发明人： Sarath Gunapala ,  John K. Liu ,  Jin S. Park ,  True-Lon Lin ,  Mani Sundaram

    IPC分类号： H01L2906

    CPC分类号： B82Y20/00 ,  G01J5/28 ,  H01L31/035236 ,  Y10S977/759 ,  Y10S977/761 ,  Y10S977/915 ,  Y10S977/927

    摘要： An AlxGa1−xAs/GaAs/AlxGa1−xAs quantum well exhibiting a bound-to-quasibound intersubband absorptive transition is described. The bound-to-quasibound transition exists when the first excited state has the same energy as the “top” (i.e., the upper-most energy barrier) of the quantum well. The energy barrier for thermionic emission is thus equal to the energy required for intersubband absorption. Increasing the energy barrier in this way reduces dark current. The amount of photocurrent generated by the quantum well is maintained at a high level.

    摘要翻译： 描述了表现出界限对准的子带间吸收转变的Al x Ga 1-x As / GaAs / Al x Ga 1-x As量子阱。 当第一激发态具有与量子阱的“顶部”（即，最上面的能量势垒）相同的能量时，存在边界到准近渡的转变。 因此，热离子发射的能量势垒等于子带间吸收所需的能量。 以这种方式增加能量屏障可以减少暗电流。 由量子阱产生的光电流的量保持在高水平。