发明授权
US5094974A Growth of III-V films by control of MBE growth front stoichiometry
失效
通过控制MBE生长前沿化学计量来生长III-V膜
- 专利标题： Growth of III-V films by control of MBE growth front stoichiometry
- 专利标题（中）： 通过控制MBE生长前沿化学计量来生长III-V膜
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申请号： US488578申请日： 1990-02-28
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公开(公告)号： US5094974A公开(公告)日： 1992-03-10
- 发明人: Frank J. Grunthaner , John K. Liu , Bruce R. Hancock
- 申请人： Frank J. Grunthaner , John K. Liu , Bruce R. Hancock
- 申请人地址： DC Washington
- 专利权人： The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
- 当前专利权人： The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
- 当前专利权人地址： DC Washington
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/203
摘要：
For the growth of strain-layer materials and high quality single and multiple quantum wells, the instantaneous control of growth front stoichiometry is critical. The process of the invention adjusts the offset or phase of MBE control shutters to program the instantaneous arrival or flux rate of In and As.sub.4 reactants to grow InAs. The interrupted growth of first In, then As.sub.4, is also a key feature.
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