公开(公告)号：US20080144885A1

公开(公告)日：2008-06-19

申请号：US11873276

申请日：2007-10-16

申请人： Mark Zucherman ,  Sarath Gunapala ,  Sumith Bandara ,  Don Rafel

发明人： Mark Zucherman ,  Sarath Gunapala ,  Sumith Bandara ,  Don Rafel

IPC分类号： G06K9/00

CPC分类号： G06K9/00369 ,  G06K9/3241

摘要： Methods and apparatus, including computer program products, for threat detection based on radiation contrast. In general, an image from a device having a sensitivity to infrared radiation having a wavelength between three and fifteen micrometers may be received, images features from the image may be extracted, a classification may be generated of the image features from multiple classifications where the classifications include threats, and data characterizing the classification of the image features may be displayed. The device may operate at a standoff distance of five to one hundred meters. Displaying data characterizing the classification of the image features may include displaying an identification of a person carrying a threat.

摘要翻译： 方法和设备，包括计算机程序产品，用于基于辐射对比的威胁检测。 一般来说，可以接收来自具有三到十五微米之间的波长的对红外辐射敏感度的装置的图像，可以提取图像中的图像特征，可以从分类的多个分类中生成图像特征的分类 包括威胁，并且可以显示表征图像特征的分类的数据。 该装置可以在距离距离为五到一百米的范围内工作。 显示表征图像特征的分类的数据可以包括显示携带威胁的人的标识。

公开(公告)号：US07745815B2

公开(公告)日：2010-06-29

申请号：US11653785

申请日：2007-01-16

申请人： Sumith V. Bandara ,  Sarath Gunapala ,  John K. Liu

发明人： Sumith V. Bandara ,  Sarath Gunapala ,  John K. Liu

IPC分类号： H01L29/06 ,  H01L31/072 ,  H01L31/109 ,  H01L33/00

CPC分类号： H01L27/14652 ,  G01J4/04 ,  H01L27/14625 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/1035

摘要： A quantum well infrared photodetector (QWIP) focal plane array having structures, each structure having stacked layers of quantum wells and a reflective grating to provide polarization sensitivity. The reflective grating is etched to provide electrical contacts for individual pixels. The reflective gratings comprise grooves, where the grooves for a particular structure run in a particular direction to provide polarization sensitivity. Each structure may comprise groups of quantum well layers, each group sensitive to a particular frequency band. By shorting out unwanted quantum well layers, and by forming the reflective gratings to come into contact with the quantum well layers having a particular frequency band sensitivity, the pixels in the QWIP focal plane array may provide frequency and polarization information.

摘要翻译： 具有结构的量子阱红外光电检测器（QWIP）焦平面阵列，每个结构具有层叠的量子阱层和反射光栅以提供极化灵敏度。 蚀刻反射光栅以为单个像素提供电触点。 反射光栅包括凹槽，其中用于特定结构的凹槽沿特定方向运行以提供极化灵敏度。 每个结构可以包括量子阱层组，每个组对特定频带敏感。 通过短路不需要的量子阱层，并且通过形成反射光栅与具有特定频带灵敏度的量子阱层接触，QWIP焦平面阵列中的像素可以提供频率和极化信息。

公开(公告)号：US06211529B1

公开(公告)日：2001-04-03

申请号：US08785350

申请日：1997-01-17

申请人： Sarath Gunapala ,  John K. Liu ,  Jin S. Park ,  True-Lon Lin ,  Mani Sundaram

发明人： Sarath Gunapala ,  John K. Liu ,  Jin S. Park ,  True-Lon Lin ,  Mani Sundaram

IPC分类号： H01L2906

CPC分类号： B82Y20/00 ,  G01J5/28 ,  H01L31/035236 ,  Y10S977/759 ,  Y10S977/761 ,  Y10S977/915 ,  Y10S977/927

摘要： An AlxGa1−xAs/GaAs/AlxGa1−xAs quantum well exhibiting a bound-to-quasibound intersubband absorptive transition is described. The bound-to-quasibound transition exists when the first excited state has the same energy as the “top” (i.e., the upper-most energy barrier) of the quantum well. The energy barrier for thermionic emission is thus equal to the energy required for intersubband absorption. Increasing the energy barrier in this way reduces dark current. The amount of photocurrent generated by the quantum well is maintained at a high level.

摘要翻译： 描述了表现出界限对准的子带间吸收转变的Al x Ga 1-x As / GaAs / Al x Ga 1-x As量子阱。 当第一激发态具有与量子阱的“顶部”（即，最上面的能量势垒）相同的能量时，存在边界到准近渡的转变。 因此，热离子发射的能量势垒等于子带间吸收所需的能量。 以这种方式增加能量屏障可以减少暗电流。 由量子阱产生的光电流的量保持在高水平。

公开(公告)号：US20070187604A1

公开(公告)日：2007-08-16

申请号：US11653785

申请日：2007-01-16

申请人： Sumith Bandara ,  Sarath Gunapala ,  John Liu

发明人： Sumith Bandara ,  Sarath Gunapala ,  John Liu

IPC分类号： G01J5/00

CPC分类号： H01L27/14652 ,  G01J4/04 ,  H01L27/14625 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/1035

摘要： A quantum well infrared photodetector (QWIP) focal plane array having structures, each structure having stacked layers of quantum wells and a reflective grating to provide polarization sensitivity. The reflective grating is etched to provide electrical contacts for individual pixels. The reflective gratings comprise grooves, where the grooves for a particular structure run in a particular direction to provide polarization sensitivity. Each structure may comprise groups of quantum well layers, each group sensitive to a particular frequency band. By shorting out unwanted quantum well layers, and by forming the reflective gratings to come into contact with the quantum well layers having a particular frequency band sensitivity, the pixels in the QWIP focal plane array may provide frequency and polarization information.

摘要翻译： 具有结构的量子阱红外光电检测器（QWIP）焦平面阵列，每个结构具有层叠的量子阱层和反射光栅以提供极化灵敏度。 蚀刻反射光栅以为单个像素提供电触点。 反射光栅包括凹槽，其中用于特定结构的凹槽沿特定方向运行以提供极化灵敏度。 每个结构可以包括量子阱层组，每个组对特定频带敏感。 通过短路不需要的量子阱层，并且通过形成反射光栅与具有特定频带灵敏度的量子阱层接触，QWIP焦平面阵列中的像素可以提供频率和极化信息。

公开(公告)号：US06734452B2

公开(公告)日：2004-05-11

申请号：US09825875

申请日：2001-04-03

申请人： Sarath Gunapala ,  John K. Liu ,  Jin S. Park ,  True-Lon Lin ,  Mani Sundaram

发明人： Sarath Gunapala ,  John K. Liu ,  Jin S. Park ,  True-Lon Lin ,  Mani Sundaram

IPC分类号： H01L2906

CPC分类号： B82Y20/00 ,  G01J5/28 ,  H01L31/035236 ,  Y10S977/759 ,  Y10S977/761 ,  Y10S977/915 ,  Y10S977/927

摘要： An AlxGa1−xAs/GaAs/AlxGa1−xAs quantum well exhibiting a bound-to-quasibound intersubband absorptive transition is described. The bound-to-quasibound transition exists when the first excited state has the same energy as the “top” (i.e., the upper-most energy barrier) of the quantum well. The energy barrier for thermionic emission is thus equal to the energy required for intersubband absorption. Increasing the energy barrier in this way reduces dark current. The amount of photocurrent generated by the quantum well is maintained at a high level.

摘要翻译： 描述了表现出界限对准的子带间吸收转变的Al x Ga 1-x As / GaAs / Al x Ga 1-x As量子阱。 当第一激发态具有与量子阱的“顶部”（即，最上面的能量势垒）相同的能量时，存在边界到准近渡的转变。 因此，热离子发射的能量势垒等于子带间吸收所需的能量。 以这种方式增加能量屏障可以减少暗电流。 由量子阱产生的光电流的量保持在高水平。