公开(公告)号：US09735158B2

公开(公告)日：2017-08-15

申请号：US15177421

申请日：2016-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-Hoon Kim ,  Jin-Bum Kim ,  Kwan-Heum Lee ,  Byeong-Chan Lee ,  Cho-Eun Lee ,  Jin-Hee Han ,  Bon-Young Koo

IPC: H01L27/108 ,  H01L27/088 ,  H01L27/02 ,  H01L29/78 ,  H01L27/11 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/06

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823475 ,  H01L27/0207 ,  H01L27/0924 ,  H01L27/1104 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/78 ,  H01L29/7842 ,  H01L29/7849 ,  H01L29/785

Abstract: A semiconductor device includes a substrate, a first active fin and a second active fin on the substrate, respectively, a plurality of first epitaxial layers on the first active fin and on the second active fin, respectively, a plurality of second epitaxial layers on the plurality of first epitaxial layers, a bridge layer connecting the plurality of second epitaxial layers to each other, and a third epitaxial layer on the bridge layer.

公开(公告)号：US09608117B2

公开(公告)日：2017-03-28

申请号：US15049859

申请日：2016-02-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Bum Kim ,  Nam Kyu Kim ,  Hyun-Ho Noh ,  Dong-Chan Suh ,  Byeong-Chan Lee ,  Su-Jin Jung ,  Jin-Yeong Joe ,  Bon-Young Koo

IPC: H01L29/76 ,  H01L29/78 ,  H01L29/16 ,  H01L29/06

CPC classification number: H01L29/785 ,  H01L29/0649 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/7848 ,  H01L29/7856

Abstract: A semiconductor device includes an active fin structure extending in a first direction, the active fin structure including protruding portions divided by a recess, a plurality of gate structures extending in a second direction crossing the first direction and covering the protruding portions of the active fin structure, a first epitaxial pattern in a lower portion of the recess between the gate structures, a second epitaxial pattern on a portion of the first epitaxial pattern, the second epitaxial pattern contacting a sidewall of the recess, and a third epitaxial pattern on the first and second epitaxial patterns, the third epitaxial pattern filling the recess. The first epitaxial pattern includes a first impurity region having a first doping concentration, the second epitaxial pattern includes a second impurity region having a second doping concentration lower than the a first doping concentration, and the third epitaxial pattern includes a third impurity region having a third doping concentration higher than the second doping concentration. The semiconductor device may have good electrical characteristics.

公开(公告)号：US09153692B2

公开(公告)日：2015-10-06

申请号：US14194837

申请日：2014-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-Hoon Kim ,  Tae-Ouk Kwon ,  Su-Jin Jung ,  Young-Pil Kim ,  Byeong-Chan Lee ,  Bon-Young Koo

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/7848 ,  H01L29/66545 ,  H01L29/785

Abstract: Provided is a semiconductor device. The semiconductor device includes a fin on a substrate; a gate electrode cross the fin on the substrate; a source/drain formed on at least one of both sides of the gate electrode, and including a first film and a second film; and a stress film arranged between an isolation film on the substrate and the source/drain, and formed on a side surface of the fin.

Abstract translation: 提供一种半导体器件。 半导体器件在衬底上包括翅片; 栅电极跨越衬底上的翅片; 源极/漏极，形成在栅电极的两侧中的至少一个上，并且包括第一膜和第二膜; 以及布置在基板上的隔离膜和源极/漏极之间并且形成在鳍的侧表面上的应力膜。