公开(公告)号：US09478667B2

公开(公告)日：2016-10-25

申请号：US14661470

申请日：2015-03-18

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yeon Keon Moon ,  Masataka Kano ,  Sung-Hoon Yang ,  Ji Hun Lim ,  So Young Koo ,  Myoung Hwa Kim ,  Jun Hyung Lim

IPC: G02F1/136 ,  G02F1/1333 ,  H01L29/786 ,  H01L29/66 ,  G02F1/1368

CPC classification number: H01L29/78645 ,  G02F1/1368 ,  G02F2001/13685 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78642 ,  H01L29/78648

Abstract: A thin film transistor substrate includes a substrate, a bottom gate on the substrate, a first insulating layer on the substrate and on the bottom gate, a drain on the first insulating layer, a source on the first insulating layer, the source including a first source at a first side of the drain and a second source at a second side of the drain, an active layer on the first insulating layer, the active layer including a first active layer contacting the drain and the first source and a second active layer contacting the drain and the second source, a second insulating layer on the drain, the source, and the active layer, and a top gate on the second insulating layer.

Abstract translation: 薄膜晶体管衬底包括衬底，衬底上的底栅，衬底上的第一绝缘层和底栅，第一绝缘层上的漏极，第一绝缘层上的源，源包括第一绝缘层 漏极的第一侧的源极和在漏极的第二侧的第二源极，在第一绝缘层上的有源层，有源层包括接触漏极和第一源极的第一有源层和与第一源极接触的第二有源层 漏极和第二源极，漏极，源极和有源层上的第二绝缘层，以及第二绝缘层上的顶栅极。

公开(公告)号：US09329423B2

公开(公告)日：2016-05-03

申请号：US14515042

申请日：2014-10-15

Applicant: SAMSUNG DISPLAY CO., LTD

Inventor： Dong-Kwon Kim ,  Hyung-Guel Kim ,  Jun-Ho Song ,  Nam-Heon Kim ,  Joo-Hyung Lee ,  Sung-Hoon Yang ,  Kyung-Hun Yoon ,  Myung-Hum Shin ,  Jae-Hyun Cho

IPC: G02F1/1335 ,  G02F1/13 ,  G09G3/36 ,  G06F3/042 ,  G02F1/1333 ,  G06F3/041 ,  G01J1/02 ,  G01J1/04 ,  G01J1/42 ,  G02F1/1362

CPC classification number: G02F1/13338 ,  G01J1/02 ,  G01J1/0209 ,  G01J1/0219 ,  G01J1/0488 ,  G01J1/4228 ,  G02F1/133345 ,  G02F1/133603 ,  G02F1/136209 ,  G02F2001/136222 ,  G02F2203/11 ,  G06F3/0412 ,  G06F3/042 ,  G06F3/0421

Abstract: In a sensing device and a method for sending a light by using the same, the sensing device includes: a lower panel; an upper panel facing the lower panel; a liquid crystal layer disposed between the lower panel and the upper panel; an infrared ray sensor formed in at least one of the lower panel and the upper panel; and a visible ray sensor formed in at least one of the lower panel and the upper panel. The sensing device simultaneously includes the infrared ray sensor and the visible ray sensor such that a touch sensing function or an image sensing function having high reliability may be realized.

Abstract translation: 在感测装置和通过使用其发送光的方法中，感测装置包括：下面板; 面向下面板的上面板; 设置在下板和上板之间的液晶层; 形成在所述下板和所述上板中的至少一个中的红外线传感器; 以及形成在所述下面板和所述上面板中的至少一个中的可见光线传感器。 感测装置同时包括红外线传感器和可见光线传感器，使得可以实现具有高可靠性的触摸感测功能或图像感测功能。

公开(公告)号：US09252285B2

公开(公告)日：2016-02-02

申请号：US14249525

申请日：2014-04-10

Applicant: Samsung Display Co., Ltd.

Inventor： Ki-Seong Seo ,  Sung-Hoon Yang ,  Tae-Young Ahn ,  Sang-Wook Lee ,  Jung-Yun Jo ,  Heon-Sik Ha ,  Jin-Ho Hwang ,  Kyung-Tea Park ,  Jun-Mo Im

IPC: H01L21/26 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66969

Abstract: A method of manufacturing a display substrate includes forming a gate electrode on a base substrate, forming an active pattern which includes an oxide semiconductor and overlaps with the gate electrode, forming an etch stopper which partially covers the active pattern, and performing a plasma treatment process to promote a reduction reaction to portions of the active pattern exposed by the etch stopper, thereby forming a source electrode and a drain electrode.

Abstract translation: 制造显示基板的方法包括在基底基板上形成栅电极，形成包括氧化物半导体并与栅电极重叠的有源图案，形成部分覆盖有源图案的蚀刻停止层，以及进行等离子体处理工艺 以促进对由蚀刻停止件暴露的有源图案的部分的还原反应，从而形成源电极和漏电极。

公开(公告)号：US08785934B2

公开(公告)日：2014-07-22

申请号：US13677176

申请日：2012-11-14

Applicant: Samsung Display Co., Ltd.

Inventor： Sang-Woo Whangbo ,  Shi-Yul Kim ,  Sung-Hoon Yang ,  Woo-Geun Lee

IPC: H01L29/04 ,  H01L29/10

CPC classification number: H01L29/4908 ,  H01L27/124 ,  H01L27/1288

Abstract: A thin film transistor substrate includes a base substrate, a gate electrode, a gate insulating layer, a surface treating layer, an active layer, a source electrode and a drain electrode. The gate electrode is formed on the base substrate. The gate insulating layer is formed on the base substrate to cover the gate electrode. The surface treating layer is formed on the gate insulating layer by treating the gate insulating layer with a nitrogen-containing gas to prevent leakage current. The active layer is formed on the surface treating layer to cover the gate electrode. The source electrode and the gate electrode that are spaced apart from each other by a predetermined distance are formed on the active layer.

Abstract translation: 薄膜晶体管基板包括基底基板，栅极电极，栅极绝缘层，表面处理层，有源层，源电极和漏电极。 栅电极形成在基底基板上。 栅极绝缘层形成在基底基板上以覆盖栅电极。 通过用含氮气体处理栅极绝缘层，在栅极绝缘层上形成表面处理层，以防止漏电流。 在表面处理层上形成有源层以覆盖栅电极。 在有源层上形成彼此隔开预定距离的源电极和栅电极。

公开(公告)号：US10438974B2

公开(公告)日：2019-10-08

申请号：US14606986

申请日：2015-01-27

Applicant: Samsung Display Co., LTD.

Inventor： Yu-Gwang Jeong ,  Shin-Il Choi ,  Su-Bin Bae ,  Sung-Hoon Yang

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L23/532

Abstract: According to an exemplary embodiment, a display substrate includes a gate metal pattern comprising a gate electrode, an active pattern disposed on the gate pattern and a source metal pattern disposed on the active pattern. The source metal pattern includes a first lower pattern disposed on the active pattern, a second lower pattern disposed on the first lower pattern, a low-resistance metal pattern disposed on the second lower pattern, and an upper pattern disposed on the low-resistance metal pattern. The first lower pattern, the second lower pattern, and the upper pattern each include a material that is the same.

公开(公告)号：US10020352B2

公开(公告)日：2018-07-10

申请号：US15210563

申请日：2016-07-14

Applicant: Samsung Display Co., Ltd.

Inventor： Yung-Bin Chung ,  Bo-Geon Jeon ,  Eun-Jeong Cho ,  Hye-Hyang Park ,  Sung-Hoon Yang ,  Woo-Seok Jeon ,  Joo-Hee Jeon ,  Chaun-Gi Choi

IPC: H01L27/14 ,  H01L27/32 ,  H01L51/52

CPC classification number: H01L27/3258 ,  H01L27/1218 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/326 ,  H01L27/3262 ,  H01L29/7869 ,  H01L51/5253

Abstract: A substrate structure may be used in a display device. The substrate structure may include a base substrate, a transistor, and a silicon oxynitride layer. The transistor may include a semiconductor member and a gate electrode and may overlap the base substrate. The silicon oxynitride layer may directly contact at least one of the base substrate, the semiconductor member, and the gate electrode and may include (and/or contain) a hydrogen atom set. A hydrogen concentration in the silicon oxynitride layer may be greater than or equal to 1.52 atomic percent.

公开(公告)号：US09184181B2

公开(公告)日：2015-11-10

申请号：US14454822

申请日：2014-08-08

Applicant: Samsung Display Co., LTD.

Inventor： Je-Hun Lee ,  Sung-Hoon Yang ,  Hiroshi Okumura ,  Jin-Ho Hwang

IPC: H01L21/00 ,  H01L21/84 ,  H01L29/10 ,  H01L29/12 ,  H01L29/04 ,  H01L27/14 ,  H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1259 ,  H01L29/41733 ,  H01L29/7869 ,  H01L29/78696

Abstract: A display substrate includes a gate electrode on a base substrate, an active pattern which overlaps the gate electrode and includes a metal oxide semiconductor, an insulation pattern on the active pattern, a source electrode which contacts the active pattern, a drain electrode which contacts the active pattern and is spaced apart from the source electrode, and a first passivation layer which covers the active pattern and the insulation pattern, and includes fluorine, where the active pattern includes a first portion which directly contacts the insulation pattern and overlaps the gate electrode and the insulation pattern, a second portion which contacts the first passivation layer and has an electrical conductivity substantially larger than that of the first portion, a third portion which contacts the first passivation layer, has an electrical conductivity substantially larger than that of the first portion and is spaced apart from the second portion.

Abstract translation: 显示基板包括在基底基板上的栅极电极，与栅电极重叠并且包括金属氧化物半导体的有源图案，有源图案上的绝缘图案，与有源图案接触的源极电极， 并且与源电极间隔开，以及覆盖有源图案和绝缘图案并包括氟的第一钝化层，其中有源图案包括直接接触绝缘图案并与栅电极重叠的第一部分，以及 所述绝缘图案是接触所述第一钝化层并具有比所述第一部分的导电性大的电导率的第二部分，与所述第一钝化层接触的第三部分具有比所述第一部分的电导率大的电导率， 与第二部分间隔开。