公开(公告)号：US09627570B2

公开(公告)日：2017-04-18

申请号：US14711543

申请日：2015-05-13

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Suk-Won Jung ,  Hyang-Shik Kong ,  Sung-Hoon Yang ,  Sang-Youn Han ,  Kyung-Sook Jeon ,  Seung-Mi Seo ,  Mi-Seon Seo

IPC: G06F3/042 ,  G02F1/1333 ,  H01L31/112 ,  H01L31/167 ,  G02F1/1335 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/144 ,  H01L29/66 ,  H01L27/146

CPC classification number: H01L31/112 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/133512 ,  G02F1/1368 ,  G06F3/0421 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1443 ,  H01L27/1446 ,  H01L27/14678 ,  H01L29/66765 ,  H01L31/167

Abstract: A display substrate includes a pixel switching element, a pixel electrode, a reference line, a control switching element, a bias line, a light sensing element, a sensing capacitor and a light blocking filter pattern. The pixel switching element is connected to a data line and a gate line, includes a first semiconductor pattern. The pixel electrode is connected to the pixel switching element. The reference line is in parallel with the data line. The control switching element is connected to the reference line and the gate line, includes a second semiconductor pattern. The bias line is in parallel with the gate line. The light sensing element is connected to the bias line and the control switching element, includes a third semiconductor pattern. The sensing capacitor is connected to the light sensing element and a storage line. The light blocking filter pattern transmits a first light, and blocks a second light.

公开(公告)号：US09236455B2

公开(公告)日：2016-01-12

申请号：US14081160

申请日：2013-11-15

Applicant: Samsung Display Co., Ltd.

Inventor： Jung-Yun Jo ,  Sung-Hoon Yang ,  Ki-Seong Seo ,  Jin-Ho Hwang

IPC: H01L29/00 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor substrate includes an active pattern which is disposed on a base substrate and includes a channel, a source electrode and a drain electrode, the channel which includes an oxide semiconductor, the source electrode and the drain electrode connected the channel, a gate electrode overlapped with the channel, a passivation layer which covers the source electrode, the drain electrode and the gate electrode and a fluorine deposition layer disposed between the active pattern and the passivation layer.

Abstract translation: 薄膜晶体管基板包括设置在基底基板上并包括沟道，源电极和漏电极的有源图案，所述沟道包括氧化物半导体，源极和与漏极连接的沟道，栅极 电极与沟道重叠，覆盖源电极，漏极和栅电极的钝化层和布置在活性图案和钝化层之间的氟沉积层。

公开(公告)号：US08975145B2

公开(公告)日：2015-03-10

申请号：US14168971

申请日：2014-01-30

Applicant: Samsung Display Co., Ltd.

Inventor： Yu-Gwang Jeong ,  Young-Wook Lee ,  Sang-Gab Kim ,  Woo-Geun Lee ,  Min-Seok Oh ,  Jang-Soo Kim ,  Kap-Soo Yoon ,  Shin-Il Choi ,  Hong-Kee Chin ,  Seung-Ha Choi ,  Seung-Hwan Shim ,  Sung-Hoon Yang ,  Ki-Hun Jeong

IPC: H01L33/44 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L27/127 ,  H01L27/1214 ,  H01L27/1259 ,  H01L27/1288 ,  H01L29/66765

Abstract: Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.

Abstract translation: 本发明的实施例涉及薄膜晶体管和显示面板的制造方法，包括在基板上形成包括栅电极的栅极线，在栅电极上形成栅绝缘层，在栅电极上形成本征半导体 栅极绝缘层，在本征半导体上形成非本征半导体，在外部半导体上形成包括源电极和漏电极的数据线，以及对源电极和漏极之间的非本征半导体的一部分进行等离子体处理，以形成 保护构件和保护构件的相应侧上的欧姆接触。 因此，可以省略用于蚀刻外部半导体和形成用于保护本征半导体的无机绝缘层的工艺，从而可以简化显示面板的制造工艺，可以降低制造成本，并且可以提高生产率。

公开(公告)号：US08907345B2

公开(公告)日：2014-12-09

申请号：US14170603

申请日：2014-02-01

Applicant: Samsung Display Co., Ltd.

Inventor： Yeon-Ju Kim ,  Sung-Jae Moon ,  Yun-Jung Cho ,  Bum-Ki Baek ,  Kwang-Hoon Lee ,  Byoung-Sun Na ,  Sung-Hoon Yang ,  Yoon-Jang Kim ,  Eun Cho

IPC: H01L33/20 ,  G03F1/38 ,  G03F1/00 ,  G03F1/36 ,  H01L29/417

CPC classification number: G03F1/38 ,  G03F1/00 ,  G03F1/14 ,  G03F1/36 ,  H01L29/41733

Abstract: A photomask includes; a source electrode pattern including; a first electrode portion which extends in a first direction, a second electrode portion which extends in the first direction and is substantially parallel to the first electrode portion, and a third electrode portion which extends from a first end of the first electrode portion to a first end of the second electrode portion and is rounded with a first curvature, a drain electrode pattern which extends in the first direction and is disposed between the first electrode portion and the second electrode portion, wherein an end of the drain electrode pattern is rounded to correspond to the third electrode portion; and a channel region pattern which is disposed between the source electrode pattern and the drain electrode pattern, wherein a center location of the first curvature and a center location of the rounded portion of the end of the drain electrode pattern are the same.

公开(公告)号：US20130234124A1

公开(公告)日：2013-09-12

申请号：US13871368

申请日：2013-04-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： KAP-SOO YOON ,  Woo-Geun Lee ,  Bong-Kyun Kim ,  Sung-Hoon Yang ,  Ki-Won Kim ,  Hyun-Jung Lee

IPC: H01L29/786 ,  H01L51/52

CPC classification number: H01L29/78693 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1288 ,  H01L27/3248 ,  H01L27/3262 ,  H01L51/5203

Abstract: Provided are a thin-film transistor (TFT) substrate, a method of manufacturing the same, and a display device including the same. The TFT substrate includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor pattern formed on the gate insulating layer, a source electrode formed on the oxide semiconductor pattern, a drain electrode formed on the oxide semiconductor pattern to face the source electrode, and a pixel electrode formed on the gate insulating layer.

Abstract translation: 提供了一种薄膜晶体管（TFT）基板，其制造方法和包括该薄膜晶体管的显示装置。 TFT基板包括形成在基板上的栅电极，形成在栅电极上的栅极绝缘层，形成在栅极绝缘层上的氧化物半导体图案，形成在氧化物半导体图案上的源电极，形成在氧化物上的漏电极 面对源电极的半导体图案，以及形成在栅极绝缘层上的像素电极。

公开(公告)号：US08932917B2

公开(公告)日：2015-01-13

申请号：US13940761

申请日：2013-07-12

Applicant: Samsung Display Co., Ltd.

Inventor： Byoung-June Kim ,  Jae-Ho Choi ,  Chang-Oh Jeong ,  Sung-Hoon Yang ,  Je-Hun Lee ,  Do-Hyun Kim ,  Hwa-Yeul Oh ,  Yong-Mo Choi

IPC: H01L27/12 ,  H01L29/66

CPC classification number: H01L27/1255 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66765

Abstract: A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.

Abstract translation: 薄膜晶体管（TFT）的制造方法包括形成包括可以与硅组合的金属的栅电极，以在衬底上形成硅化物，并通过在栅极电极中向栅电极提供包括硅的气体形成栅极绝缘层 该方法还包括在栅极绝缘层上形成半导体，在半导体上形成数据线和漏极并形成连接到漏电极的像素电极。

公开(公告)号：US08619230B2

公开(公告)日：2013-12-31

申请号：US13776029

申请日：2013-02-25

Applicant: Samsung Display Co., Ltd.

Inventor： Seung-Hwan Shim ,  Gug-Rae Jo ,  Sung-Hoon Yang ,  Kap-Soo Yoon ,  Ki-Hun Jeong ,  Jae-Ho Choi

IPC: G02F1/1333 ,  G02F1/1345 ,  G02F1/1339

CPC classification number: G02F1/1345 ,  G02F2001/133519

Abstract: An approach is provided for manufacturing a LCD apparatus. A first substrate is formed by forming a transparent conductive layer on a first transparent insulating substrate and forming a transparent conductive electrode on the transparent conductive layer. A second substrate is formed by forming a thin-film transistor (TFT) on a second transparent insulating substrate and forming a pixel electrode. The first substrate is coupled to the second substrate using a sealing member.

Abstract translation: 提供了用于制造LCD装置的方法。 第一衬底通过在第一透明绝缘衬底上形成透明导电层并在透明导电层上形成透明导电电极而形成。 第二衬底通过在第二透明绝缘衬底上形成薄膜晶体管（TFT）并形成像素电极而形成。 使用密封构件将第一衬底耦合到第二衬底。

公开(公告)号：US20130295731A1

公开(公告)日：2013-11-07

申请号：US13940761

申请日：2013-07-12

Applicant: Samsung Display Co., Ltd.

Inventor： BYOUNG-JUNE KIM ,  Jae-Ho Choi ,  Chang-Oh Jeong ,  Sung-Hoon Yang ,  Je-Hun Lee ,  Do-Hyun Kim ,  Hwa-Yeul Oh ,  Yong-Mo Choi

IPC: H01L29/66

CPC classification number: H01L27/1255 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66765

Abstract: A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.

Abstract translation: 薄膜晶体管（TFT）的制造方法包括形成包括可以与硅组合的金属的栅电极，以在衬底上形成硅化物，并通过在栅极电极中向栅电极提供包括硅的气体形成栅极绝缘层 该方法还包括在栅极绝缘层上形成半导体，在半导体上形成数据线和漏极并形成连接到漏电极的像素电极。

公开(公告)号：US20130164870A1

公开(公告)日：2013-06-27

申请号：US13776029

申请日：2013-02-25

Applicant: Samsung Display Co., Ltd.

Inventor： Seung-Hwan Shim ,  Gug-Rae Jo ,  Sung-Hoon Yang ,  Kap-Soo Yoon ,  Ki-Hun Jeong ,  Jae-Ho Choi

IPC: G02F1/1343

CPC classification number: G02F1/1345 ,  G02F2001/133519

Abstract: An approach is provided for manufacturing a LCD apparatus. A first substrate is formed by forming a transparent conductive layer on a first transparent insulating substrate and forming a transparent conductive electrode on the transparent conductive layer. A second substrate is formed by forming a thin-film transistor (TFT) on a second transparent insulating substrate and forming a pixel electrode. The first substrate is coupled to the second substrate using a sealing member.

Abstract translation: 提供了用于制造LCD装置的方法。 第一衬底通过在第一透明绝缘衬底上形成透明导电层并在透明导电层上形成透明导电电极而形成。 第二衬底通过在第二透明绝缘衬底上形成薄膜晶体管（TFT）并形成像素电极而形成。 使用密封构件将第一衬底耦合到第二衬底。

公开(公告)号：US10720501B2

公开(公告)日：2020-07-21

申请号：US16563948

申请日：2019-09-09

Applicant: Samsung Display Co., Ltd.

Inventor： Yu-Gwang Jeong ,  Shin-Il Choi ,  Su-Bin Bae ,  Sung-Hoon Yang

IPC: H01L29/417 ,  H01L27/12 ,  H01L29/45 ,  H01L29/66 ,  H01L23/532

Abstract: According to an exemplary embodiment, a display substrate includes a gate metal pattern comprising a gate electrode, an active pattern disposed on the gate pattern and a source metal pattern disposed on the active pattern. The source metal pattern includes a first lower pattern disposed on the active pattern, a second lower pattern disposed on the first lower pattern, a low-resistance metal pattern disposed on the second lower pattern, and an upper pattern disposed on the low-resistance metal pattern. The first lower pattern, the second lower pattern, and the upper pattern each include a material that is the same.