Display apparatus and method of driving the same
    3.
    发明授权
    Display apparatus and method of driving the same 有权
    显示装置及其驱动方法

    公开(公告)号:US08823673B2

    公开(公告)日:2014-09-02

    申请号:US13907041

    申请日:2013-05-31

    CPC classification number: G06F3/044 G06F3/0412

    Abstract: A display apparatus includes a display panel, sensor circuits, and a detection circuit. Each sensor circuit senses at least two external signals different from each other and outputs a sensing signal. The detection circuit receives the sensing signal to detect a position to which the external signals are applied. Each sensor circuit includes sensors commonly connected to an output terminal, a scan line which receives a scan signal, a capacitor disposed between the scan line and the output terminal, charged with a first voltage in response to the scan signal, and charged with a second voltage greater than the first voltage in response to the current signal after the scan line is floated, a switching device which outputs the sensing signal in response to the second voltage, and a readout line which applies the sensing signal output from the switching device to the detection circuit.

    Abstract translation: 显示装置包括显示面板,传感器电路和检测电路。 每个传感器电路感测至少两个彼此不同的外部信号,并输出感测信号。 检测电路接收检测信号以检测施加外部信号的位置。 每个传感器电路包括共同连接到输出端的传感器,接收扫描信号的扫描线,设置在扫描线和输出端之间的电容器,响应于扫描信号而被充电第一电压, 响应于扫描线漂移之后的电流信号而大于第一电压的电压;响应于第二电压输出感测信号的开关装置;以及读出线,其将从开关装置输出的感测信号施加到 检测电路。

    Visible sensing transistor, display panel and manufacturing method thereof
    4.
    发明授权
    Visible sensing transistor, display panel and manufacturing method thereof 有权
    可见感测晶体管,显示面板及其制造方法

    公开(公告)号:US08735893B2

    公开(公告)日:2014-05-27

    申请号:US13872605

    申请日:2013-04-29

    Abstract: A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent.

    Abstract translation: 显示装置包括红外感测晶体管和可见感测晶体管。 可见感测晶体管包括在衬底上的半导体; 半导体上的欧姆接触; 在欧姆接触上的蚀刻停止层; 蚀刻停止层上的源电极和漏电极; 源电极和漏电极上的钝化层; 和钝化层上的栅电极。 蚀刻停止层可以由与源电极和漏电极相同的材料构成。 除了不存在蚀刻停止层之外,红外感测晶体管类似于可见感测晶体管。

    Method for manufacturing a display panel
    7.
    发明授权
    Method for manufacturing a display panel 有权
    显示面板的制造方法

    公开(公告)号:US08975145B2

    公开(公告)日:2015-03-10

    申请号:US14168971

    申请日:2014-01-30

    Abstract: Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.

    Abstract translation: 本发明的实施例涉及薄膜晶体管和显示面板的制造方法,包括在基板上形成包括栅电极的栅极线,在栅电极上形成栅绝缘层,在栅电极上形成本征半导体 栅极绝缘层,在本征半导体上形成非本征半导体,在外部半导体上形成包括源电极和漏电极的数据线,以及对源电极和漏极之间的非本征半导体的一部分进行等离子体处理,以形成 保护构件和保护构件的相应侧上的欧姆接触。 因此,可以省略用于蚀刻外部半导体和形成用于保护本征半导体的无机绝缘层的工艺,从而可以简化显示面板的制造工艺,可以降低制造成本,并且可以提高生产率。

    Display device
    8.
    发明授权

    公开(公告)号:US10690982B2

    公开(公告)日:2020-06-23

    申请号:US16384482

    申请日:2019-04-15

    Abstract: A liquid crystal display according to an exemplary embodiment of the present invention includes a substrate, a plurality of pixels arranged in a matrix on the substrate where each pixel includes a switching element, a plurality of gate lines that are connected to the switching elements and extend in a row direction, and a gate driver that is connected to the gate lines and is formed on the substrate as an integrated circuit. In the liquid crystal display, the gate driver includes a first region and a second region that is not aligned with the first region.

    Liquid crystal display
    9.
    发明授权

    公开(公告)号:US10261377B2

    公开(公告)日:2019-04-16

    申请号:US15433880

    申请日:2017-02-15

    Abstract: A liquid crystal display according to an exemplary embodiment of the present invention includes a substrate, a plurality of pixels arranged in a matrix on the substrate where each pixel includes a switching element, a plurality of gate lines that are connected to the switching elements and extend in a row direction, and a gate driver that is connected to the gate lines and is formed on the substrate as an integrated circuit. In the liquid crystal display, the gate driver includes a first region and a second region that is not aligned with the first region.

    Visible sensing transistor, display panel and manufacturing method thereof
    10.
    发明授权
    Visible sensing transistor, display panel and manufacturing method thereof 有权
    可见感测晶体管,显示面板及其制造方法

    公开(公告)号:US09128341B2

    公开(公告)日:2015-09-08

    申请号:US14251282

    申请日:2014-04-11

    Abstract: A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent.

    Abstract translation: 显示装置包括红外感测晶体管和可见感测晶体管。 可见感测晶体管包括在衬底上的半导体; 半导体上的欧姆接触; 在欧姆接触上的蚀刻停止层; 蚀刻停止层上的源电极和漏电极; 源电极和漏电极上的钝化层; 和钝化层上的栅电极。 蚀刻停止层可以由与源电极和漏电极相同的材料构成。 除了不存在蚀刻停止层之外,红外感测晶体管类似于可见感测晶体管。

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