公开(公告)号：US08735893B2

公开(公告)日：2014-05-27

申请号：US13872605

申请日：2013-04-29

Applicant: Samsung Display Co., Ltd.

Inventor： Dae-Cheol Kim ,  Sung-Ryul Kim ,  Yung-Jong Yeo ,  Hong-Kee Chin ,  Ki-Hun Jeong

IPC: H01L29/04

CPC classification number: G02F1/1368 ,  G02F1/13338 ,  G02F2001/13312 ,  H01L31/1136 ,  H01L31/12

Abstract: A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent.

Abstract translation: 显示装置包括红外感测晶体管和可见感测晶体管。 可见感测晶体管包括在衬底上的半导体; 半导体上的欧姆接触; 在欧姆接触上的蚀刻停止层; 蚀刻停止层上的源电极和漏电极; 源电极和漏电极上的钝化层; 和钝化层上的栅电极。 蚀刻停止层可以由与源电极和漏电极相同的材料构成。 除了不存在蚀刻停止层之外，红外感测晶体管类似于可见感测晶体管。