公开(公告)号：US20190244982A1

公开(公告)日：2019-08-08

申请号：US16147880

申请日：2018-10-01

申请人： Wuhan China Star Optoelectronics Technology Co., Ltd.

发明人： Gaiping Lu ,  Jiawei Zhang ,  Wei Tang

IPC分类号： H01L27/12 ,  H01L29/786 ,  G02F1/1362 ,  G02F1/1343 ,  H01L21/768 ,  G02F1/1368 ,  G02F1/1333 ,  H01L29/66

CPC分类号： H01L27/1244 ,  G02F1/13338 ,  G02F1/13439 ,  G02F1/136204 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13685 ,  G02F2202/104 ,  G06F3/041 ,  G06F2203/04103 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76877 ,  H01L27/1248 ,  H01L27/1262 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78636 ,  H01L29/78675

摘要： The present disclosure provides a thin film transistor (TFT) substrate and a manufacturing method thereof. The TFT substrate include a TFT; a flat layer to cover the TFT; an opening hole defined in the flat layer and corresponding to a drain of the TFT; a bottom of the opening hole to retain a part of the flat layer for forming a flat layer sheet; a first metal layer formed on the flat layer; a first insulating layer formed on the first metal; a second metal formed on the first insulating layer and pass through the flat layer sheet for electrically connecting to the drain.

公开(公告)号：US20190094603A1

公开(公告)日：2019-03-28

申请号：US16162046

申请日：2018-10-16

申请人： LG ELECTRONICS INC.

发明人： Hyojin WON ,  Yongho LEE

IPC分类号： G02F1/1333 ,  G02F1/1335 ,  G02F1/1345 ,  G02F1/1339 ,  G02F1/1368 ,  G02F1/1362 ,  G09F9/35

CPC分类号： G02F1/133308 ,  G02F1/133512 ,  G02F1/133514 ,  G02F1/133608 ,  G02F1/1339 ,  G02F1/13452 ,  G02F1/136209 ,  G02F1/1368 ,  G02F2001/133314 ,  G02F2001/13332 ,  G02F2001/133322 ,  G02F2001/133325 ,  G02F2001/13685 ,  G09F9/35

摘要： A display device is disclosed. The display device includes a first substrate, a frame positioned in the rear of the first substrate, a second substrate opposite the first substrate and positioned between the first substrate and the frame, the second substrate having an area less than an area of the first substrate, and a member layer electrically connected to the first substrate and extended toward the frame.

公开(公告)号：US20190051672A1

公开(公告)日：2019-02-14

申请号：US16069130

申请日：2016-11-09

申请人： LG INNOTEK CO., LTD.

发明人： Sang Youl LEE ,  Chung Song KIM ,  Ji Hyung MOON ,  Sun Woo PARK ,  June O SONG

IPC分类号： H01L27/12 ,  H01L29/778 ,  H01L29/66 ,  G02F1/1343 ,  H01L29/20 ,  H01L29/205 ,  G02F1/1368 ,  G02F1/1362 ,  G02F1/1333

CPC分类号： H01L27/1225 ,  G02F1/13338 ,  G02F1/134363 ,  G02F1/136209 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13685 ,  G02F2202/101 ,  G02F2202/102 ,  H01L27/1218 ,  H01L27/1266 ,  H01L27/3244 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/786

摘要： A thin film transistor substrate according to an embodiment includes: a substrate; and a thin film transistor disposed on the substrate, wherein the thin film transistor includes a channel layer including a nitride-based semiconductor layer, a source electrode electrically connected to a first region of the channel layer, a drain electrode electrically connected to a second region of the channel layer, a gate electrode disposed on the channel layer, and a depletion forming layer disposed between the channel layer and the gate electrode.

公开(公告)号：US20190049775A1

公开(公告)日：2019-02-14

申请号：US16161988

申请日：2018-10-16

申请人： Japan Display Inc. ,  Panasonic Liquid Crystal Display Co., Ltd.

发明人： Hideo TANABE ,  Masaru TAKABATAKE ,  Toshiki KANEKO ,  Atsushi HASEGAWA ,  Hiroko SEHATA

IPC分类号： G02F1/1333 ,  H01L29/786 ,  H01L27/12 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/1335 ,  G02F1/1343

CPC分类号： G02F1/133345 ,  G02F1/133305 ,  G02F1/133504 ,  G02F1/133555 ,  G02F1/134363 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13685 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/78675

摘要： A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.

公开(公告)号：US20180364509A1

公开(公告)日：2018-12-20

申请号：US16109834

申请日：2018-08-23

申请人： Japan Display Inc.

发明人： Yohei Yamaguchi ,  Arichika Ishida ,  Hidekazu Miyake ,  Hiroto Miyake ,  Isao Suzumura

IPC分类号： G02F1/1368 ,  G02F1/1343 ,  G02F1/1362 ,  H01L27/12 ,  H01L29/786 ,  H01L29/423

CPC分类号： G02F1/1368 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136209 ,  G02F1/136227 ,  G02F2001/136218 ,  G02F2001/13685 ,  G02F2202/10 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/78633 ,  H01L29/7869

摘要： According to one embodiment, a display device includes an insulating substrate, a thin-film transistor including a semiconductor layer formed on a layer above the insulating substrate, a gate electrode which at least partly overlaps the semiconductor layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer, and a light shielding layer formed between the thin-film transistor and the insulating substrate to at least partly overlap the semiconductor layer, the light shielding layer electrically connected to the gate electrode.

公开(公告)号：US20180356701A1

公开(公告)日：2018-12-13

申请号：US15984913

申请日：2018-05-21

申请人： Japan Display Inc.

发明人： Yosuke HYODO ,  Shinichiro OKA ,  Lu JIN

IPC分类号： G02F1/1362 ,  G02F1/1335 ,  G02F1/1333 ,  G02F1/1343

CPC分类号： G02F1/136286 ,  G02F1/133305 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/133514 ,  G02F1/1343 ,  G02F1/136209 ,  G02F2001/134372 ,  G02F2001/13685

摘要： A display device including a first resin substrate having flexibility, a second resin substrate having flexibility facing the first resin substrate, an electro-optical layer between the first resin substrate and the second resin substrate, a semiconductor layer included in a transistor between the first resin substrate and the electro-optical layer, a plurality of wiring layers between the first resin substrate and the electro-optical layer, the plurality of wiring layers including a metal layer below the semiconductor layer, a first inorganic insulating layer between the metal layer and the first resin substrate, and a second inorganic insulating layer arranged in the second resin substrate between the electro-optical layer and the second resin substrate, a thickness of the second inorganic insulating layer being different from a thickness of the first inorganic insulating layer.

公开(公告)号：US20180314120A1

公开(公告)日：2018-11-01

申请号：US15798859

申请日：2017-10-31

申请人： Xiamen Tianma Micro-Electronics Co., Ltd.

发明人： Tao PENG

IPC分类号： G02F1/1362 ,  H01L27/12 ,  G02F1/1343 ,  G02F1/1368 ,  G02F1/1333 ,  H01L27/02 ,  G06F3/041 ,  G06F3/044

CPC分类号： G02F1/136204 ,  G02F1/13338 ,  G02F1/134363 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/134372 ,  G02F2001/13685 ,  G02F2201/121 ,  G02F2201/123 ,  G02F2202/103 ,  G02F2202/104 ,  G02F2202/16 ,  G06F3/0412 ,  G06F3/0416 ,  G06F3/044 ,  G06F2203/04107 ,  G06F2203/04111 ,  H01L27/0266 ,  H01L27/0288 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1248 ,  H01L27/323 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3276 ,  H01L29/78669 ,  H01L29/78675

摘要： Provided are a display device and an array substrate including: base substrate; first metal layer; second metal layer at a side of first metal layer away from base substrate; third metal layer at a side of second metal layer away from base substrate; first insulation layer between first metal layer and second metal layer; second insulation layer between second metal layer and third metal layer; first oxide conductor layer at a side of third metal layer away from base substrate; second oxide conductor layer at a side of first oxide conductor layer away from base substrate; third insulation layer between first oxide conductor layer and third metal layer; and fourth insulation layer; in display area, fourth insulation layer is placed between first oxide conductor layer and second oxide conductor layer; in non-display area, third metal layer is connected with second metal layer at least by first oxide conductor layer.

公开(公告)号：US10074669B2

公开(公告)日：2018-09-11

申请号：US15480423

申请日：2017-04-06

申请人： InnoLux Corporation

发明人： Chandra Lius

IPC分类号： H01L27/12 ,  H01L29/24 ,  H01L29/786 ,  H01L29/423

CPC分类号： H01L27/1225 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/134309 ,  G02F1/1368 ,  G02F2001/133388 ,  G02F2001/13685 ,  G06F3/0412 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/323 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/4908 ,  H01L29/78648 ,  H01L29/78672 ,  H01L29/78675 ,  H01L29/7869 ,  H01L29/78696

摘要： A display device is disclosed, which includes: a substrate having a display region and a peripheral region adjacent to the display region; a first transistor disposed on the display region and comprising a first channel layer, wherein the first channel layer includes an oxide semiconductor layer; and a second transistor disposed on the peripheral region and comprising a second channel layer, wherein the second channel layer includes a silicon semiconductor layer. Herein, a first ratio, which is a ratio of a first channel width of the first channel layer to the first channel length thereof, is greater than or equal to 0.4 and less than or equal to 4.5; and a second ratio, which is a ratio of a second channel width of the second channel layer to a second channel length thereof, is greater than or equal to 0.05 and less than or equal to 0.8.

公开(公告)号：US10055057B2

公开(公告)日：2018-08-21

申请号：US15235096

申请日：2016-08-11

申请人： LG Display Co., Ltd.

发明人： Taegung Kim ,  Seungtae Kim ,  Junghyeon Kim

IPC分类号： G06F3/041 ,  G02F1/1333 ,  G06F3/044 ,  G09G3/3233 ,  G09G3/3225 ,  G09G3/3266 ,  H01L27/32

CPC分类号： G06F3/0418 ,  G02F1/13338 ,  G02F1/13624 ,  G02F2001/13685 ,  G06F3/0412 ,  G06F3/044 ,  G09G3/3225 ,  G09G3/3233 ,  G09G3/3266 ,  G09G2300/0413 ,  G09G2300/0426 ,  G09G2310/08 ,  G09G2320/029 ,  H01L27/3223 ,  H01L27/323

摘要： A touch sensor integrated display device and a method for driving the same are disclosed. The touch sensor integrated display device includes a display panel, in which a pixel array is divided into a plurality of touch blocks, each touch block includes pixels displaying an input image and a sensing target dummy pixel sensing a touch input, and the sensing target dummy pixel includes a dummy driving TFT configured to control a source-drain current based on a gate-source voltage, and a panel drive circuit, which in a touch sensing period, supplies a scan control signal and a sensing control signal to the sensing target dummy pixel and sets the gate-source voltage to turn on the dummy driving TFT by applying a touch driving data voltage to a gate node of the dummy driving TFT and applying a reference voltage to a source node of the dummy driving TFT.

公开(公告)号：US20180210587A1

公开(公告)日：2018-07-26

申请号：US15502789

申请日：2016-12-30

申请人： Wuhan China Star Optoelectronics Technology Co., Ltd.

发明人： Qipei ZHANG ,  Chunqian ZHANG

IPC分类号： G06F3/041 ,  G02F1/1333 ,  G02F1/1368 ,  G02F1/1362 ,  G06F3/044

CPC分类号： G06F3/0412 ,  G02F1/13338 ,  G02F1/134363 ,  G02F1/136209 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/13606 ,  G02F2001/13685 ,  G06F3/044

摘要： The present disclosure relates to an array substrate of embedded touch panels. The array substrate includes a touch electrode arranged in an active area of the touch panel in a matrix, a touch sensing chip arranged outside the active area of the touch panel, a plurality of metal connecting lines arranged on a different layer with the touch electrode. The metal connecting lines connect to the touch electrode via at least one through hole, and the metal connecting line and a data line of the touch panel are insulated from each other and are overlapped. The touch electrode connects to the touch sensing chip via the metal connecting line, wherein a switch circuit is arranged between the metal connecting line and the data line. The switch circuit connects the metal connecting line and the data line in a touch phase, and the switch circuit disconnects the metal connecting line and the data line in a display phase.