公开(公告)号：US12100709B2

公开(公告)日：2024-09-24

申请号：US18480552

申请日：2023-10-04

申请人： Japan Display Inc.

发明人： Isao Suzumura ,  Kazufumi Watabe ,  Yoshinori Ishii ,  Hidekazu Miyake ,  Yohei Yamaguchi

IPC分类号： H01L27/12 ,  G02F1/133 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/24 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/786 ,  H10K59/121

CPC分类号： H01L27/1225 ,  G02F1/13306 ,  G02F1/136209 ,  G02F1/1368 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/78633 ,  H01L29/78675 ,  H01L29/7869 ,  G02F1/13685 ,  G02F2202/10 ,  G02F2202/104 ,  H10K59/1213

摘要： The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

公开(公告)号：US11764233B2

公开(公告)日：2023-09-19

申请号：US17459423

申请日：2021-08-27

申请人： Japan Display Inc.

发明人： Hajime Watakabe ,  Isao Suzumura ,  Akihiro Hanada ,  Yohei Yamaguchi

IPC分类号： H01L27/00 ,  H01L29/00 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L27/1292 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78666

摘要： A display device including a substrate having thin film transistors (TFT) comprising: the TFT including an oxide semiconductor film, a gate electrode and an insulating film formed between the oxide semiconductor film and the gate electrode, wherein a first aluminum oxide film and a second aluminum oxide film, which is formed on the first aluminum oxide film, are formed between the insulating film and the gate electrode, an oxygen concentration in the first aluminum oxide film is bigger than an oxygen concentration in the second aluminum oxide film.

公开(公告)号：US11742430B2

公开(公告)日：2023-08-29

申请号：US17347630

申请日：2021-06-15

申请人： Japan Display Inc.

发明人： Yohei Yamaguchi ,  Kazufumi Watabe ,  Tomoyuki Ariyoshi ,  Osamu Karikome ,  Ryohei Takaya

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H01L29/45 ,  H01L29/423 ,  H01L29/40

CPC分类号： H01L29/7869 ,  H01L27/124 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/401 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908

摘要： The invention allows stable fabrication of a TFT circuit board used in a display device and having thereon an oxide semiconductor TFT. A TFT circuit board includes a TFT that includes an oxide semiconductor. The TFT has a gate insulating film formed on part of the oxide semiconductor and a gate electrode formed on the gate insulating film. A portion of the oxide semiconductor that is covered with the gate electrode 104 and a portion of the oxide semiconductor that is not covered with the gate electrode are both covered with a first interlayer insulating film. The first interlayer insulating film is covered with a first film 106, and the first film is covered with a first AlO film.

公开(公告)号：US11063154B2

公开(公告)日：2021-07-13

申请号：US15649126

申请日：2017-07-13

申请人： Japan Display Inc.

发明人： Yohei Yamaguchi ,  Kazufumi Watabe ,  Tomoyuki Ariyoshi ,  Osamu Karikome ,  Ryohei Takaya

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49 ,  H01L29/423 ,  H01L29/40

摘要： The invention allows stable fabrication of a TFT circuit board used in a display device and having thereon an oxide semiconductor TFT. A TFT circuit board includes a TFT that includes an oxide semiconductor. The TFT has a gate insulating film formed on part of the oxide semiconductor and a gate electrode formed on the gate insulating film. A portion of the oxide semiconductor that is covered with the gate electrode 104 and a portion of the oxide semiconductor that is not covered with the gate electrode are both covered with a first interlayer insulating film. The first interlayer insulating film is covered with a first film 106, and the first film is covered with a first AlO film.

公开(公告)号：US09709853B2

公开(公告)日：2017-07-18

申请号：US14480804

申请日：2014-09-09

申请人： Japan Display Inc.

发明人： Norihiro Uemura ,  Hidekazu Miyake ,  Isao Suzumura ,  Yohei Yamaguchi ,  Toshiki Kaneko

IPC分类号： G02F1/1345 ,  G02F1/1337 ,  G02F1/1362 ,  G02F1/1333

CPC分类号： G02F1/133788 ,  G02F1/136209 ,  G02F2001/133388

摘要： To maintain good operation of a peripheral circuit using an oxide thin film transistor in a liquid crystal display panel to which photo alignment is applied, the liquid crystal display panel includes: a transparent substrate provided with an oxide thin film transistor in the periphery of a pixel portion in which pixel electrodes are arranged, to control the pixel electrodes; and an alignment film to align liquid crystal provided in the pixel portion. The alignment film is subjected to photo alignment treatment by ultraviolet irradiation. Further, an ultraviolet absorbing layer is provided so as to cover the oxide thin film transistor. For example, an alignment film is used for the ultraviolet absorbing layer to absorb the ultraviolet light for the photo aliment treatment of the alignment film, in the peripheral circuit portion for controlling the pixel electrodes, thereby preventing the threshold voltage of the oxide thin film transistor from shifting.

公开(公告)号：US09660039B2

公开(公告)日：2017-05-23

申请号：US15062887

申请日：2016-03-07

申请人： Japan Display Inc.

发明人： Hidekazu Miyake ,  Arichika Ishida ,  Hiroto Miyake ,  Isao Suzumura ,  Yohei Yamaguchi

IPC分类号： H01L29/49 ,  H01L29/417 ,  H01L29/786

CPC分类号： H01L29/41733 ,  H01L29/78696

摘要： According to one embodiment, a thin-film transistor includes a semiconductor layer SC including a channel region, and a source region and a drain region on both sides of the channel region, a gate electrode GE, a first electrode SE connected to the source region via a first contact hole CH1, a second electrode DE connected to the drain region via a second contact hole CH2, a source line connected to the first electrode, and a drain line connected to the second electrode. A distance from the first and second contact holes to an end of the respective regions in a direction of a channel width is greater than or equal to 5 μm and less than or equal to 30 μm. The source line and the drain line extend in directions different from each other.

公开(公告)号：US09620526B2

公开(公告)日：2017-04-11

申请号：US15015445

申请日：2016-02-04

申请人： Japan Display Inc.

发明人： Isao Suzumura ,  Norihiro Uemura ,  Hidekazu Miyake ,  Yohei Yamaguchi

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L21/473 ,  H01L21/02 ,  H01L21/3213

CPC分类号： H01L27/1225 ,  H01L21/02071 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/32138 ,  H01L21/32139 ,  H01L21/473 ,  H01L27/1248 ,  H01L27/127 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

摘要： There is provided a bottom gate channel etched thin film transistor that can suppress initial Vth depletion and a Vth shift. A thin film transistor is formed, including a gate electrode interconnection disposed on a substrate, a gate insulating film, an oxide semiconductor layer to be a channel layer, a stacked film of a source electrode interconnection and a first hard mask layer, a stacked film of a drain electrode interconnection and a second hard mask layer, and a protective insulating film.

公开(公告)号：US09613860B2

公开(公告)日：2017-04-04

申请号：US14996323

申请日：2016-01-15

申请人： Japan Display Inc.

发明人： Isao Suzumura ,  Arichika Ishida ,  Hidekazu Miyake ,  Hiroto Miyake ,  Yohei Yamaguchi

IPC分类号： H01L21/768 ,  H01L29/66 ,  H01L21/02 ,  H01L29/417 ,  H01L29/45 ,  H01L29/786 ,  H01L29/49 ,  H01L21/78

CPC分类号： H01L21/76895 ,  H01L21/022 ,  H01L21/32136 ,  H01L21/465 ,  H01L21/78 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869

摘要： According to one embodiment, a method of manufacturing a thin-film transistor includes forming a semiconductor layer on a gate electrode with an insulating layer 12 being interposed, forming interconnect formation layers on the semiconductor layer, forming a plurality of interconnects and electrodes by patterning the interconnect formation layers through etching, patterning the semiconductor layer in an island shape through etching after forming the electrodes, exposing a channel region of the semiconductor layer by etching a part of the electrodes on the semiconductor layer, and forming a protective layer so as to overlap the interconnects, the electrodes and the semiconductor layer having the island shape.

公开(公告)号：US11189734B2

公开(公告)日：2021-11-30

申请号：US16735800

申请日：2020-01-07

申请人： Japan Display Inc.

发明人： Yohei Yamaguchi ,  Yuichiro Hanyu ,  Hiroki Hidaka

IPC分类号： H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L29/423 ,  H01L21/02 ,  H01L27/12 ,  H01L21/00 ,  H01L27/32

摘要： A semiconductor device including a first oxide semiconductor layer, a first gate electrode opposing the first oxide semiconductor layer, a first gate insulating layer between the first oxide semiconductor layer and the first gate electrode, a first insulating layer covering the first oxide semiconductor layer and having a first opening, a first conductive layer above the first insulating layer and in the first opening, the first conductive layer being electrically connected to the first oxide semiconductor layer, and an oxide layer between an upper surface of the first insulating layer and the first conductive layer, wherein the first insulating layer is exposed from the oxide layer in a region not overlapping the first conductive layer in a plan view.

公开(公告)号：US11133337B2

公开(公告)日：2021-09-28

申请号：US16852925

申请日：2020-04-20

申请人： Japan Display Inc.

发明人： Hajime Watakabe ,  Isao Suzumura ,  Akihiro Hanada ,  Yohei Yamaguchi

IPC分类号： H01L27/00 ,  H01L29/00 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

摘要： A display device including a substrate having thin film transistors (TFT) comprising: the TFT including an oxide semiconductor film, a gate electrode and an insulating film formed between the oxide semiconductor film and the gate electrode, wherein a first aluminum oxide film and a second aluminum oxide film, which is formed on the first aluminum oxide film, are formed between the insulating film and the gate electrode, an oxygen concentration in the first aluminum oxide film is bigger than an oxygen concentration in the second aluminum oxide film.