Invention Grant
- Patent Title: Display device
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Application No.: US15062887Application Date: 2016-03-07
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Publication No.: US09660039B2Publication Date: 2017-05-23
- Inventor: Hidekazu Miyake , Arichika Ishida , Hiroto Miyake , Isao Suzumura , Yohei Yamaguchi
- Applicant: Japan Display Inc.
- Applicant Address: JP Minato-ku
- Assignee: Japan Display Inc.
- Current Assignee: Japan Display Inc.
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2015-048140 20150311
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L29/417 ; H01L29/786

Abstract:
According to one embodiment, a thin-film transistor includes a semiconductor layer SC including a channel region, and a source region and a drain region on both sides of the channel region, a gate electrode GE, a first electrode SE connected to the source region via a first contact hole CH1, a second electrode DE connected to the drain region via a second contact hole CH2, a source line connected to the first electrode, and a drain line connected to the second electrode. A distance from the first and second contact holes to an end of the respective regions in a direction of a channel width is greater than or equal to 5 μm and less than or equal to 30 μm. The source line and the drain line extend in directions different from each other.
Public/Granted literature
- US20160268417A1 DISPLAY DEVICE Public/Granted day:2016-09-15
Information query
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