公开(公告)号：US12100709B2

公开(公告)日：2024-09-24

申请号：US18480552

申请日：2023-10-04

申请人： Japan Display Inc.

发明人： Isao Suzumura ,  Kazufumi Watabe ,  Yoshinori Ishii ,  Hidekazu Miyake ,  Yohei Yamaguchi

IPC分类号： H01L27/12 ,  G02F1/133 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/24 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/786 ,  H10K59/121

CPC分类号： H01L27/1225 ,  G02F1/13306 ,  G02F1/136209 ,  G02F1/1368 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/78633 ,  H01L29/78675 ,  H01L29/7869 ,  G02F1/13685 ,  G02F2202/10 ,  G02F2202/104 ,  H10K59/1213

摘要： The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

公开(公告)号：US11966131B2

公开(公告)日：2024-04-23

申请号：US18196312

申请日：2023-05-11

申请人： Japan Display Inc.

发明人： Fumiya Kimura ,  Isao Suzumura

IPC分类号： G02F1/1362 ,  G02F1/1333 ,  G02F1/1339 ,  G02F1/1343 ,  G02F1/1368 ,  G02F1/133 ,  G02F1/1335 ,  G03F7/00

CPC分类号： G02F1/136227 ,  G02F1/13394 ,  G02F1/13439 ,  G02F1/136213 ,  G02F1/1368 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/133514 ,  G03F7/0007

摘要： A display device is provided and includes a substrate on which a TFT is formed. The display device including an organic film formed on the TFT, the organic film having a through hole, and a first common electrode, an upper pixel electrode and a second common electrode which are stacked in this order above the organic passivation film, a filler being filled in the through hole, and wherein the upper pixel electrode is electrically connected with the TFT, and an edge of the upper pixel electrode is located directly on the filler.

公开(公告)号：US11874574B2

公开(公告)日：2024-01-16

申请号：US18085595

申请日：2022-12-21

申请人： Japan Display Inc.

发明人： Fumiya Kimura ,  Isao Suzumura

IPC分类号： G02F1/1362 ,  G02F1/1343 ,  G02F1/1333

CPC分类号： G02F1/136222 ,  G02F1/133345 ,  G02F1/134345 ,  G02F1/136227 ,  G02F1/136286

摘要： According to one embodiment, a display device includes a signal line, a scanning line, a semiconductor layer, a first insulating layer which covers the semiconductor layer, a color filter above the first insulating layer, a pixel electrode above the color filter and a common electrode. The first insulating layer includes a first contact hole for connecting the semiconductor layer and the pixel electrode to each other. The first contact hole is provided at a position displaced from the color filter in plan view.

公开(公告)号：US11764233B2

公开(公告)日：2023-09-19

申请号：US17459423

申请日：2021-08-27

申请人： Japan Display Inc.

发明人： Hajime Watakabe ,  Isao Suzumura ,  Akihiro Hanada ,  Yohei Yamaguchi

IPC分类号： H01L27/00 ,  H01L29/00 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L27/1292 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78666

摘要： A display device including a substrate having thin film transistors (TFT) comprising: the TFT including an oxide semiconductor film, a gate electrode and an insulating film formed between the oxide semiconductor film and the gate electrode, wherein a first aluminum oxide film and a second aluminum oxide film, which is formed on the first aluminum oxide film, are formed between the insulating film and the gate electrode, an oxygen concentration in the first aluminum oxide film is bigger than an oxygen concentration in the second aluminum oxide film.

公开(公告)号：US10459304B2

公开(公告)日：2019-10-29

申请号：US16395491

申请日：2019-04-26

申请人： Japan Display Inc.

发明人： Hajime Watakabe ,  Isao Suzumura ,  Hirokazu Watanabe ,  Akihiro Hanada

IPC分类号： H01L29/10 ,  H01L29/12 ,  G02F1/1368 ,  H01L27/12 ,  H01L51/50 ,  H01L29/786 ,  H01L21/8234

摘要： A display device comprising: a first TFT using silicon (Si) and a second TFT using oxide semiconductor are formed on a substrate, a distance between the silicon (Si) and the substrate is smaller than a distance between the oxide semiconductor and the substrate, a drain source electrode of the first TFT connects with the silicon (Si) via a first through hole, a drain source electrode of the second TFT connects with the oxide semiconductor via a second through hole, metal films are made on the oxide semiconductor sandwiching a channel of the oxide semiconductor in a plan view, the channel has a channel width, an ALO layer is formed on the metal films and the oxide semiconductor, the second source drain electrode and the metal films are connected via the second through hole formed in the AlO layer.

公开(公告)号：US10211235B2

公开(公告)日：2019-02-19

申请号：US15678501

申请日：2017-08-16

申请人： Japan Display Inc.

发明人： Isao Suzumura ,  Hajime Watakabe ,  Akihiro Hanada ,  Hirokazu Watanabe

IPC分类号： H01L27/12 ,  H01L21/02 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786 ,  G03F7/00 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/32

摘要： The purpose of the present invention is to form both LTPS TFT and Ply-Si TFT on a same substrate. The feature of the display device to realize the above purpose is that: a display device comprising: a substrate including a first TFT having an oxide semiconductor layer and a second TFT having a Poly-Si layer, an undercoat is formed on the substrate, the oxide semiconductor layer is formed on or above the undercoat, a first interlayer insulating film is formed on or above the oxide semiconductor layer, the Poly-Si layer is formed on or above the first interlayer insulating film.

公开(公告)号：US09818881B2

公开(公告)日：2017-11-14

申请号：US15230915

申请日：2016-08-08

申请人： Japan Display Inc.

发明人： Toshinari Sasaki ,  Isao Suzumura

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L29/423 ,  H01L29/66 ,  H01L21/4757 ,  H01L21/465 ,  H01L29/40

CPC分类号： H01L29/7869 ,  H01L21/465 ,  H01L21/47573 ,  H01L29/401 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78603

摘要： A semiconductor device includes an oxide semiconductor layer, a gate electrode facing the oxide semiconductor layer, a gate insulating layer between the oxide semiconductor layer and the gate electrode, a first barrier layer below the oxide semiconductor layer, and a second barrier layer above the oxide semiconductor layer, the second barrier layer covering a top surface and side surfaces of the oxide semiconductor layer and being in contact with the first barrier layer in a region around the oxide semiconductor layer.

公开(公告)号：US09709853B2

公开(公告)日：2017-07-18

申请号：US14480804

申请日：2014-09-09

申请人： Japan Display Inc.

发明人： Norihiro Uemura ,  Hidekazu Miyake ,  Isao Suzumura ,  Yohei Yamaguchi ,  Toshiki Kaneko

IPC分类号： G02F1/1345 ,  G02F1/1337 ,  G02F1/1362 ,  G02F1/1333

CPC分类号： G02F1/133788 ,  G02F1/136209 ,  G02F2001/133388

摘要： To maintain good operation of a peripheral circuit using an oxide thin film transistor in a liquid crystal display panel to which photo alignment is applied, the liquid crystal display panel includes: a transparent substrate provided with an oxide thin film transistor in the periphery of a pixel portion in which pixel electrodes are arranged, to control the pixel electrodes; and an alignment film to align liquid crystal provided in the pixel portion. The alignment film is subjected to photo alignment treatment by ultraviolet irradiation. Further, an ultraviolet absorbing layer is provided so as to cover the oxide thin film transistor. For example, an alignment film is used for the ultraviolet absorbing layer to absorb the ultraviolet light for the photo aliment treatment of the alignment film, in the peripheral circuit portion for controlling the pixel electrodes, thereby preventing the threshold voltage of the oxide thin film transistor from shifting.

公开(公告)号：US09660039B2

公开(公告)日：2017-05-23

申请号：US15062887

申请日：2016-03-07

申请人： Japan Display Inc.

发明人： Hidekazu Miyake ,  Arichika Ishida ,  Hiroto Miyake ,  Isao Suzumura ,  Yohei Yamaguchi

IPC分类号： H01L29/49 ,  H01L29/417 ,  H01L29/786

CPC分类号： H01L29/41733 ,  H01L29/78696

摘要： According to one embodiment, a thin-film transistor includes a semiconductor layer SC including a channel region, and a source region and a drain region on both sides of the channel region, a gate electrode GE, a first electrode SE connected to the source region via a first contact hole CH1, a second electrode DE connected to the drain region via a second contact hole CH2, a source line connected to the first electrode, and a drain line connected to the second electrode. A distance from the first and second contact holes to an end of the respective regions in a direction of a channel width is greater than or equal to 5 μm and less than or equal to 30 μm. The source line and the drain line extend in directions different from each other.

公开(公告)号：US09620526B2

公开(公告)日：2017-04-11

申请号：US15015445

申请日：2016-02-04

申请人： Japan Display Inc.

发明人： Isao Suzumura ,  Norihiro Uemura ,  Hidekazu Miyake ,  Yohei Yamaguchi

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L21/473 ,  H01L21/02 ,  H01L21/3213

CPC分类号： H01L27/1225 ,  H01L21/02071 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/32138 ,  H01L21/32139 ,  H01L21/473 ,  H01L27/1248 ,  H01L27/127 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

摘要： There is provided a bottom gate channel etched thin film transistor that can suppress initial Vth depletion and a Vth shift. A thin film transistor is formed, including a gate electrode interconnection disposed on a substrate, a gate insulating film, an oxide semiconductor layer to be a channel layer, a stacked film of a source electrode interconnection and a first hard mask layer, a stacked film of a drain electrode interconnection and a second hard mask layer, and a protective insulating film.