公开(公告)号：US10522567B2

公开(公告)日：2019-12-31

申请号：US16041259

申请日：2018-07-20

申请人： Japan Display Inc.

发明人： Yuichiro Hanyu ,  Hirokazu Watanabe

IPC分类号： H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L51/05

摘要： According to one embodiment, a semiconductor device includes a first insulating film, a first semiconductor layer formed of polycrystalline silicon, a second semiconductor layer formed of an oxide semiconductor, a second insulating film, a first gate electrode, a second gate electrode, a third insulating film formed of silicon nitride, and a protection layer. The protection layer is located between the second insulating film and the third insulating film, is opposed to the second semiconductor layer, and is formed of either an aluminum oxide or fluorinated silicon nitride.

公开(公告)号：US11935967B2

公开(公告)日：2024-03-19

申请号：US17393452

申请日：2021-08-04

申请人： Japan Display Inc.

发明人： Takeshi Sakai ,  Yuichiro Hanyu ,  Masahiro Watabe

IPC分类号： H01L29/786 ,  H01L21/02 ,  H01L21/383 ,  H01L21/385 ,  H01L21/428 ,  H01L27/12 ,  H01L29/423 ,  G02F1/1343 ,  G02F1/1368 ,  H10K59/121

CPC分类号： H01L29/78696 ,  H01L21/02164 ,  H01L21/383 ,  H01L21/385 ,  H01L21/428 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1262 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/7869 ,  G02F1/134363 ,  G02F1/1368 ,  G02F1/13685 ,  H10K59/1213

摘要： The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.

公开(公告)号：US11189734B2

公开(公告)日：2021-11-30

申请号：US16735800

申请日：2020-01-07

申请人： Japan Display Inc.

发明人： Yohei Yamaguchi ,  Yuichiro Hanyu ,  Hiroki Hidaka

IPC分类号： H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L29/423 ,  H01L21/02 ,  H01L27/12 ,  H01L21/00 ,  H01L27/32

摘要： A semiconductor device including a first oxide semiconductor layer, a first gate electrode opposing the first oxide semiconductor layer, a first gate insulating layer between the first oxide semiconductor layer and the first gate electrode, a first insulating layer covering the first oxide semiconductor layer and having a first opening, a first conductive layer above the first insulating layer and in the first opening, the first conductive layer being electrically connected to the first oxide semiconductor layer, and an oxide layer between an upper surface of the first insulating layer and the first conductive layer, wherein the first insulating layer is exposed from the oxide layer in a region not overlapping the first conductive layer in a plan view.

公开(公告)号：US20190198533A1

公开(公告)日：2019-06-27

申请号：US16286146

申请日：2019-02-26

申请人： Japan Display Inc.

发明人： Yuichiro Hanyu ,  Arichika Ishida ,  Masahiro Watabe

IPC分类号： H01L27/12 ,  H01L21/02 ,  H01L29/786 ,  H01L29/49

CPC分类号： H01L27/1237 ,  G02F1/133345 ,  G02F1/136209 ,  G02F1/1368 ,  G02F2201/501 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02274 ,  H01L21/02532 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02675 ,  H01L27/1225 ,  H01L27/1229 ,  H01L27/1233 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1274 ,  H01L27/3262 ,  H01L29/4908 ,  H01L29/78633 ,  H01L29/78675 ,  H01L29/7869

摘要： A display device has a thin film transistor on a substrate. The thin film transistor includes a first transistor having an oxide semiconductor film, a first gate insulating film, and a first gate electrode and a second transistor having a silicon semiconductor film, a second gate insulating film, and a second gate electrode. The first gate insulating film includes a first insulating film and a second insulating film. The oxide semiconductor film is positioned between the first insulating film and the substrate. The first insulating film is positioned between the silicon semiconductor film and the substrate and between the second insulating film and the substrate. The second gate insulating film includes an insulating film made of the same material in the same layer as the second insulating film. The first gate electrode and the second gate electrode are in the same layer.

公开(公告)号：US10290657B2

公开(公告)日：2019-05-14

申请号：US15867847

申请日：2018-01-11

申请人： Japan Display Inc.

发明人： Yuichiro Hanyu ,  Arichika Ishida ,  Masahiro Watabe

IPC分类号： H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L21/02 ,  H01L27/32 ,  G02F1/1368 ,  G02F1/1333 ,  G02F1/1362

摘要： A display device has a thin film transistor on a substrate. The thin film transistor includes a first transistor having an oxide semiconductor film, a first gate insulating film, and a first gate electrode and a second transistor having a silicon semiconductor film, a second gate insulating film, and a second gate electrode. The first gate insulating film includes a first insulating film and a second insulating film. The oxide semiconductor film is positioned between the first insulating film and the substrate. The first insulating film is positioned between the silicon semiconductor film and the substrate and between the second insulating film and the substrate. The second gate insulating film includes an insulating film made of the same material in the same layer as the second insulating film. The first gate electrode and the second gate electrode are in the same layer.

公开(公告)号：US20180308987A1

公开(公告)日：2018-10-25

申请号：US15937331

申请日：2018-03-27

申请人： Japan Display Inc.

发明人： Takeshi Sakai ,  Yuichiro Hanyu ,  Masahiro Watabe

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L21/428 ,  H01L21/383 ,  H01L21/385

CPC分类号： H01L29/78696 ,  G02F1/134363 ,  G02F1/1368 ,  G02F2001/13685 ,  H01L21/02164 ,  H01L21/383 ,  H01L21/385 ,  H01L21/428 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1262 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/7869

摘要： The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.

公开(公告)号：US10090332B2

公开(公告)日：2018-10-02

申请号：US15620997

申请日：2017-06-13

申请人： Japan Display Inc.

发明人： Yuichiro Hanyu ,  Hirokazu Watanabe

IPC分类号： H01L27/12 ,  H01L29/78 ,  H01L51/05 ,  H01L29/786

摘要： According to one embodiment, a semiconductor device includes a first insulating film, a first semiconductor layer formed of polycrystalline silicon, a second semiconductor layer formed of an oxide semiconductor, a second insulating film, a first gate electrode, a second gate electrode, a third insulating film formed of silicon nitride, and a protection layer. The protection layer is located between the second insulating film and the third insulating film, is opposed to the second semiconductor layer, and is formed of either an aluminum oxide or fluorinated silicon nitride.

公开(公告)号：US11764305B2

公开(公告)日：2023-09-19

申请号：US17510534

申请日：2021-10-26

申请人： Japan Display Inc.

发明人： Yohei Yamaguchi ,  Yuichiro Hanyu ,  Hiroki Hidaka

IPC分类号： H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L29/423 ,  H01L21/02 ,  H01L27/12 ,  H10K59/126

CPC分类号： H01L29/7869 ,  H01L21/02266 ,  H01L21/02554 ,  H01L27/124 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/42384 ,  H01L29/78648 ,  H01L29/78696 ,  H10K59/126

摘要： A semiconductor device including a first oxide semiconductor layer, a first gate electrode opposing the first oxide semiconductor layer, a first gate insulating layer between the first oxide semiconductor layer and the first gate electrode, a first insulating layer covering the first oxide semiconductor layer and having a first opening, a first conductive layer above the first insulating layer and in the first opening, the first conductive layer being electrically connected to the first oxide semiconductor layer, and an oxide layer between an upper surface of the first insulating layer and the first conductive layer, wherein the first insulating layer is exposed from the oxide layer in a region not overlapping the first conductive layer in a plan view.

公开(公告)号：US11114568B2

公开(公告)日：2021-09-07

申请号：US16831958

申请日：2020-03-27

申请人： Japan Display Inc.

发明人： Takeshi Sakai ,  Yuichiro Hanyu ,  Masahiro Watabe

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L21/383 ,  H01L21/385 ,  H01L21/428 ,  H01L29/423 ,  G02F1/1343 ,  H01L27/32 ,  G02F1/1368

摘要： The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.

公开(公告)号：US10608016B2

公开(公告)日：2020-03-31

申请号：US16286146

申请日：2019-02-26

申请人： Japan Display Inc.

发明人： Yuichiro Hanyu ,  Arichika Ishida ,  Masahiro Watabe

IPC分类号： H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L21/02 ,  H01L27/32 ,  G02F1/1368 ,  G02F1/1333 ,  G02F1/1362

摘要： A display device has a thin film transistor on a substrate. The thin film transistor includes a first transistor having an oxide semiconductor film, a first gate insulating film, and a first gate electrode and a second transistor having a silicon semiconductor film, a second gate insulating film, and a second gate electrode. The first gate insulating film includes a first insulating film and a second insulating film. The oxide semiconductor film is positioned between the first insulating film and the substrate. The first insulating film is positioned between the silicon semiconductor film and the substrate and between the second insulating film and the substrate. The second gate insulating film includes an insulating film made of the same material in the same layer as the second insulating film. The first gate electrode and the second gate electrode are in the same layer.