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11.发明授权Unique and unclonable platform identifiers using data-dependent circuit path responses 有权使用数据相关电路路径响应的独特和不可克隆的平台标识符公开(公告)号：US09449153B2
公开(公告)日：2016-09-20
申请号：US13752215
申请日：2013-01-28
Applicant: QUALCOMM Incorporated
Inventor： Xu Guo
IPC: G06F21/10 , G01R31/30 , H04L9/32 , G06F21/70 , G06F21/76 , G01R31/28 , G06F21/73 , G06F21/86 , G06F21/12 , G06F21/71 , G01R31/317
CPC classification number: G06F21/10 , G01R31/28 , G01R31/3004 , G01R31/31725 , G06F21/12 , G06F21/121 , G06F21/70 , G06F21/71 , G06F21/73 , G06F21/76 , G06F21/86 , H04L9/3278
Abstract: A method and apparatus are provided for generating a unique identifier. One or more tests are performed over one or more data-dependent circuit paths for one or more circuits. The one or more tests are then repeated over the one or more data-dependent circuit paths for the one or more circuits while adjusting an operating frequency and/or operating voltage for each of the one or more circuits. A threshold frequency and/or threshold voltage is ascertained for each of the one or more data-dependent circuit paths. An identifier may then be generated based on a plurality of the threshold frequencies and/or threshold voltages ascertained for the one or more data-dependent circuit paths.
Abstract translation: 提供了一种用于生成唯一标识符的方法和装置。 在一个或多个电路的一个或多个数据相关电路上进行一个或多个测试。 然后，对一个或多个电路的一个或多个与数据有关的电路路径重复一个或多个测试，同时调整一个或多个电路中的每个电路的工作频率和/或工作电压。 确定一个或多个数据相关电路路径中的每一个的阈值频率和/或阈值电压。 然后可以基于针对一个或多个数据相关电路路径确定的多个阈值频率和/或阈值电压来生成标识符。
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12.发明授权Physically unclonable function based on the initial logical state of magnetoresistive random-access memory 有权基于磁阻随机存取存储器的初始逻辑状态的物理不可克隆功能公开(公告)号：US09230630B2
公开(公告)日：2016-01-05
申请号：US14072599
申请日：2013-11-05
Applicant: QUALCOMM Incorporated
Inventor： Xiaochun Zhu , Steven M. Millendorf , Xu Guo , David M. Jacobson , Kangho Lee , Seung H. Kang , Matthew Michael Nowak
CPC classification number: G11C11/1673 , G09C1/00 , G11C11/161 , H04L9/0866 , H04L9/30 , H04L9/3278
Abstract: One feature pertains to a method for implementing a physically unclonable function (PUF). The method includes providing an array of magnetoresistive random access memory (MRAM) cells, where the MRAM cells are each configured to represent one of a first logical state and a second logical state. The array of MRAM cells are un-annealed and free from exposure to an external magnetic field oriented in a direction configured to initialize the MRAM cells to a single logical state of the first and second logical states. Consequently, each MRAM cell has a random initial logical state of the first and second logical states. The method further includes sending a challenge to the MRAM cell array that reads logical states of select MRAM cells of the array, and obtaining a response to the challenge from the MRAM cell array that includes the logical states of the selected MRAM cells of the array.
Abstract translation: 一个特征涉及用于实现物理不可克隆功能（PUF）的方法。 该方法包括提供磁阻随机存取存储器（MRAM）单元阵列，其中MRAM单元被配置为表示第一逻辑状态和第二逻辑状态之一。 MRAM单元的阵列是未退火的，并且没有暴露于被配置为将MRAM单元初始化的方向定向到第一和第二逻辑状态的单个逻辑状态的外部磁场。 因此，每个MRAM单元具有第一和第二逻辑状态的随机初始逻辑状态。 该方法还包括向MRAM单元阵列发送挑战，该MRAM单元阵列读取阵列的选择MRAM单元的逻辑状态，以及从包括阵列的所选MRAM单元的逻辑状态的MRAM单元阵列获得对挑战的响应。
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13.发明授权Method and apparatus for using dynamic voltage and frequency scaling with circuit-delay based integrated circuit identification 有权使用基于电路延迟的集成电路识别的动态电压和频率缩放的方法和装置公开(公告)号：US09015500B2
公开(公告)日：2015-04-21
申请号：US13743239
申请日：2013-01-16
Applicant: QUALCOMM Incorporated
Inventor： Xu Guo , Liangguo Shen
CPC classification number: G06F21/73 , G06F1/26 , G09C1/00 , H04L9/0866 , H04L9/3278 , H04L2209/12
Abstract: One feature pertains to a method that includes implementing a Physical Unclonable Function (PUF) circuit, and obtaining a first set of output bits from the PUF circuit by operating the PUF circuit at a first supply voltage level and/or first frequency. Then, at least one of the first supply voltage level is changed to a second supply voltage level and/or the first frequency is changed to a second frequency, where the second supply voltage level and the second frequency are different than the first supply voltage level and the first frequency, respectively. A second set of output bits is then obtained by operating the PUF circuit at the second supply voltage level and/or the second frequency, where the second set of output bits is in part different than the first set. Secure data is generated using the first set of output bits and the second sets of output bits.
Abstract translation: 一个特征涉及包括实现物理不可克隆功能（PUF）电路并且通过在第一电源电压电平和/或第一频率下操作PUF电路从PUF电路获得第一组输出位的方法。 然后，将第一电源电压电平中的至少一个改变为第二电源电压电平和/或将第一频率改变为第二频率，其中第二电源电压电平和第二频率不同于第一电源电压电平 和第一个频率。 然后通过在第二电源电压电平和/或第二频率下操作PUF电路获得第二组输出位，其中第二组输出位与第一组的部分不同。 使用第一组输出位和第二组输出位生成安全数据。
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14.发明申请PHYSICALLY UNCLONABLE FUNCTION BASED ON PROGRAMMING VOLTAGE OF MAGNETORESISTIVE RANDOM-ACCESS MEMORY 有权基于磁阻随机存取存储器的编程电压的物理不可靠函数公开(公告)号：US20150070979A1
公开(公告)日：2015-03-12
申请号：US14072537
申请日：2013-11-05
Applicant: QUALCOMM Incorporated
Inventor： Xiaochun Zhu , Steven M. Millendorf , Xu Guo , David M. Jacobson , Kangho Lee , Seung H. Kang , Matthew Michael Nowak
IPC: G11C11/16
CPC classification number: G11C11/1695 , G09C1/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , H04L9/0866 , H04L9/3278 , H04L2209/12
Abstract: One feature pertains to a method of implementing a physically unclonable function. The method includes initializing an array of magnetoresistive random-access memory (MRAM) cells to a first logical state, where each of the MRAM cells have a random transition voltage that is greater than a first voltage and less than a second voltage. The transition voltage represents a voltage level that causes the MRAM cells to transition from the first logical state to a second logical state. The method further includes applying a programming signal voltage to each of the MRAM cells of the array to cause at least a portion of the MRAM cells of the array to randomly change state from the first logical state to the second logical state, where the programming signal voltage is greater than the first voltage and less than the second voltage.
Abstract translation: 一个特征涉及实现物理上不可克隆功能的方法。 该方法包括将磁阻随机存取存储器（MRAM）单元的阵列初始化为第一逻辑状态，其中每个MRAM单元具有大于第一电压且小于第二电压的随机转变电压。 转换电压表示使MRAM单元从第一逻辑状态转换到第二逻辑状态的电压电平。 该方法还包括将编程信号电压施加到阵列的每个MRAM单元，以使阵列的MRAM单元的至少一部分随机地将状态从第一逻辑状态改变到第二逻辑状态，其中编程信号 电压大于第一电压且小于第二电压。
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公开(公告)号：US09948470B2
公开(公告)日：2018-04-17
申请号：US15011255
申请日：2016-01-29
Applicant: QUALCOMM Incorporated
Inventor： Xu Guo , David M. Jacobson , Yafei Yang , Adam J. Drew , Brian Marc Rosenberg
CPC classification number: H04L9/3278 , G06F7/588 , H04L63/08 , H04L63/0853 , H04L63/0876 , H04L63/0884
Abstract: An authentication device is provided that authenticates an electronic device based on the responses from distinct types of physically unclonable functions. The authentication device receives a device identifier associated with the electronic device. It then sends one or more challenges to the electronic device. In response, the authentication device receives one or more responses from the electronic device, the one or more responses including characteristic information generated from two or more distinct types of physically unclonable functions in the electronic device.
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Patent Agency Ranking
公开(公告)号：US09798887B2
公开(公告)日：2017-10-24
申请号：US14836651
申请日：2015-08-26
Applicant: QUALCOMM Incorporated
Inventor： Ron Keidar , Yau Chu , Xu Guo
CPC classification number: G06F21/62 , G06F9/4401 , G06F21/575 , H04L9/0891 , H04L9/30 , H04L9/3268
Abstract: Disclosed is an apparatus and method to securely activate or revoke a key. For example, the apparatus may comprise: a storage device to store a plurality of pre-stored keys; a communication interface to receive an activate key command and a certificate associated with one of the pre-stored keys; and a processor. The processor may be coupled to the storage device and the communication interface and may be configured to: implement the activate key command to reboot the apparatus with the pre-stored key and the certificate; and determine if the reboot is successful.
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17.发明授权Magnetic tunnel junction resistance comparison based physical unclonable function 有权基于磁隧道结电阻比较的物理不可克隆功能公开(公告)号：US09489999B2
公开(公告)日：2016-11-08
申请号：US14555434
申请日：2014-11-26
Applicant: QUALCOMM Incorporated
Inventor： Brian Marc Rosenberg , Xiaochun Zhu , Xu Guo
CPC classification number: G11C11/1673 , G09C1/00 , G11C11/1675 , G11C11/1695 , G11C16/20 , H04L9/0866 , H04L9/3278
Abstract: A method includes coupling a first magnetic tunnel junction (MTJ) element and a second MTJ element to a comparison circuit. The method also includes comparing, at the comparison circuit, a first resistance of the first MTJ element to a second resistance of the second MTJ element. The method further includes generating a first physical unclonable function (PUF) output bit based on a result of comparing the first resistance to the second resistance.
Abstract translation: 一种方法包括将第一磁隧道结（MTJ）元件和第二MTJ元件耦合到比较电路。 该方法还包括在比较电路中比较第一MTJ元件的第一电阻与第二MTJ元件的第二电阻。 该方法还包括基于将第一电阻与第二电阻进行比较的结果来产生第一物理不可克隆功能（PUF）输出位。
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公开(公告)号：US20160227348A1
公开(公告)日：2016-08-04
申请号：US14613169
申请日：2015-02-03
Applicant: QUALCOMM Incorporated
Inventor： Xu Guo , Aydin Aysu
CPC classification number: H04W4/008 , G06F21/445 , G06F21/6218 , G06F21/79 , H04L9/3278 , H04L63/0853 , H04L2209/80 , H04W4/80 , H04W12/06 , H04W12/08
Abstract: One feature pertains to a near field communication (NFC) target device comprising a memory circuit adapted to store sensitive data, an NFC interface adapted to transmit and receive information using NFC protocols, and a processing circuit. The processing circuit receives a plurality of provider identification (PID) numbers from a plurality of providers, where each PID number is associated with a different provider. The processing circuit also stores the PID numbers at the memory circuit, and assigns a privilege mask to each PID number received and stored. The NFC target device may also include a physical unclonable function (PUF) circuit. The processing circuit may additionally provide one or more PID numbers as input challenges to the PUF circuit, and receive one or more PUF output responses from the PUF circuit, where the PUF output responses are different from one another and are associated with different providers.
Abstract translation: 一个特征涉及一种近场通信（NFC）目标设备，其包括适于存储敏感数据的存储器电路，适于使用NFC协议发送和接收信息的NFC接口以及处理电路。 处理电路从多个提供者接收多个提供者识别（PID）号码，其中每个PID号码与不同的提供者相关联。 处理电路还将PID号存储在存储器电路中，并且向接收和存储的每个PID号分配权限掩码。 NFC目标设备还可以包括物理不可克隆功能（PUF）电路。 处理电路可另外提供一个或多个PID号码作为PUF电路的输入挑战，并且从PUF电路接收一个或多个PUF输出响应，其中PUF输出响应彼此不同并且与不同提供者相关联。
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19.发明申请MAGNETIC TUNNEL JUNCTION RESISTANCE COMPARISON BASED PHYSICAL UNCLONABLE FUNCTION 有权基于磁通电阻电阻比较的物理不可靠函数公开(公告)号：US20160148666A1
公开(公告)日：2016-05-26
申请号：US14555434
申请日：2014-11-26
Applicant: QUALCOMM Incorporated
Inventor： Brian Marc Rosenberg , Xiaochun Zhu , Xu Guo
IPC: G11C11/16
CPC classification number: G11C11/1673 , G09C1/00 , G11C11/1675 , G11C11/1695 , G11C16/20 , H04L9/0866 , H04L9/3278
Abstract: A method includes coupling a first magnetic tunnel junction (MTJ) element and a second MTJ element to a comparison circuit. The method also includes comparing, at the comparison circuit, a first resistance of the first MTJ element to a second resistance of the second MTJ element. The method further includes generating a first physical unclonable function (PUF) output bit based on a result of comparing the first resistance to the second resistance.
Abstract translation: 一种方法包括将第一磁隧道结（MTJ）元件和第二MTJ元件耦合到比较电路。 该方法还包括在比较电路中比较第一MTJ元件的第一电阻与第二MTJ元件的第二电阻。 该方法还包括基于将第一电阻与第二电阻进行比较的结果来产生第一物理不可克隆功能（PUF）输出位。
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20.发明授权Physically unclonable function based on programming voltage of magnetoresistive random-access memory 有权基于磁阻随机存取存储器编程电压的物理不可克隆功能公开(公告)号：US09343135B2
公开(公告)日：2016-05-17
申请号：US14072537
申请日：2013-11-05
Applicant: QUALCOMM Incorporated
Inventor： Xiaochun Zhu , Steven M. Millendorf , Xu Guo , David M. Jacobson , Kangho Lee , Seung H. Kang , Matthew Michael Nowak
CPC classification number: G11C11/1695 , G09C1/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , H04L9/0866 , H04L9/3278 , H04L2209/12
Abstract: One feature pertains to a method of implementing a physically unclonable function. The method includes initializing an array of magnetoresistive random-access memory (MRAM) cells to a first logical state, where each of the MRAM cells have a random transition voltage that is greater than a first voltage and less than a second voltage. The transition voltage represents a voltage level that causes the MRAM cells to transition from the first logical state to a second logical state. The method further includes applying a programming signal voltage to each of the MRAM cells of the array to cause at least a portion of the MRAM cells of the array to randomly change state from the first logical state to the second logical state, where the programming signal voltage is greater than the first voltage and less than the second voltage.
Abstract translation: 一个特征涉及实现物理上不可克隆功能的方法。 该方法包括将磁阻随机存取存储器（MRAM）单元的阵列初始化为第一逻辑状态，其中每个MRAM单元具有大于第一电压且小于第二电压的随机转变电压。 转换电压表示使MRAM单元从第一逻辑状态转换到第二逻辑状态的电压电平。 该方法还包括将编程信号电压施加到阵列的每个MRAM单元，以使阵列的MRAM单元的至少一部分随机地将状态从第一逻辑状态改变到第二逻辑状态，其中编程信号 电压大于第一电压且小于第二电压。
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