公开(公告)号：US20130127545A1

公开(公告)日：2013-05-23

申请号：US13741571

申请日：2013-01-15

Applicant: QUALCOMM Incorporated

Inventor： Thomas Domenick Marra ,  Aristotele Hadjichristos

IPC: H03F3/04

CPC classification number: H03F1/301 ,  H03F1/30 ,  H03F3/04 ,  H03F3/189

Abstract: Techniques for monitoring and controlling bias current of amplifiers are described. In an exemplary design, an apparatus may include an amplifier and a bias circuit. The amplifier may include at least one transistor coupled to an inductor. The bias circuit may generate at least one bias voltage for the at least one transistor in the amplifier to obtain a target bias current for the amplifier. The bias circuit may generate the at least one bias voltage based on a voltage across the inductor in the amplifier, or a current through a current mirror formed with one of the at least one transistor in the amplifier, or a gate-to-source voltage of one of the at least one transistor in the amplifier, or a voltage in a replica circuit replicating the amplifier, or a current applied to the amplifier with a switched mode power supply disabled.

Abstract translation: 描述了用于监视和控制放大器偏置电流的技术。 在示例性设计中，装置可以包括放大器和偏置电路。 放大器可以包括耦合到电感器的至少一个晶体管。 偏置电路可以为放大器中的至少一个晶体管产生至少一个偏置电压，以获得放大器的目标偏置电流。 偏置电路可以基于放大器中的电感器两端的电压或通过放大器中的至少一个晶体管中的一个形成的电流镜的电流或栅极至源极电压来产生至少一个偏置电压 放大器中的至少一个晶体管中的一个，或复制放大器的复制电路中的电压，或禁用开关模式电源的施加到放大器的电流。

公开(公告)号：US20130122833A1

公开(公告)日：2013-05-16

申请号：US13677054

申请日：2012-11-14

Applicant: QUALCOMM Incorporated

Inventor： Aristotele Hadjichristos ,  Gurkanwal Singh Sahota ,  Steven C Ciccarelli ,  David J Wilding ,  Ryan D Lane ,  Christian Holenstein ,  Milind P Shah

IPC: H05K3/36 ,  H05K13/04 ,  H04B1/40

CPC classification number: H05K3/368 ,  H01L23/66 ,  H01L25/16 ,  H01L2224/1403 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/17181 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/15321 ,  H04B1/40 ,  H05K13/0465 ,  Y10T29/49126 ,  Y10T29/5317 ,  H01L2924/00

Abstract: A radio frequency package on package (PoP) circuit is described. The radio frequency package on package (PoP) circuit includes a first radio frequency package. The first radio frequency package includes radio frequency components. The radio frequency package on package (PoP) circuit also includes a second radio frequency package. The second radio frequency package includes radio frequency components. The first radio frequency package and the second radio frequency package are in a vertical configuration. The radio frequency components on the first radio frequency package are designed to reduce the effects of ground inductance.

Abstract translation: 描述了封装（PoP）电路上的射频封装。 封装（PoP）电路上的射频封装包括第一射频封装。 第一个射频包包括射频分量。 封装（PoP）电路上的射频封装还包括第二个射频封装。 第二个射频包包括射频分量。 第一射频包和第二射频包处于垂直配置。 第一个射频封装上的射频分量被设计为减少接地电感的影响。

公开(公告)号：US10608124B2

公开(公告)日：2020-03-31

申请号：US15957484

申请日：2018-04-19

Applicant: QUALCOMM Incorporated

Inventor： Sinan Goktepeli ,  Fabio Alessio Marino ,  Narasimhulu Kanike ,  Plamen Vassilev Kolev ,  Qingqing Liang ,  Paolo Menegoli ,  Francesco Carobolante ,  Aristotele Hadjichristos

IPC: H01L29/93 ,  H01L29/06 ,  H01L29/45

Abstract: Certain aspects of the present disclosure provide a semiconductor device. One example semiconductor device generally includes a semiconductor region, an insulative layer, a first terminal, and a first non-insulative region coupled to the first terminal, the insulative layer being disposed between the first non-insulative region and the semiconductor region. In certain aspects, the insulative layer is disposed adjacent to a first side of the semiconductor region. In certain aspects, the semiconductor device also includes a second terminal, and a first silicide layer coupled to the second terminal and disposed adjacent to a second side of the semiconductor region, the first side and the second side being opposite sides of the semiconductor region.

公开(公告)号：US09473081B2

公开(公告)日：2016-10-18

申请号：US14518967

申请日：2014-10-20

Applicant: QUALCOMM Incorporated

Inventor： Antonino Scuderi ,  Aristotele Hadjichristos

IPC: H03F3/68 ,  H03F3/19 ,  H03F1/56 ,  H03F3/21 ,  H03F1/22 ,  H03F3/193 ,  H03F3/24 ,  H03F3/72 ,  H03G1/00 ,  H03G3/00

CPC classification number: H03F3/19 ,  H03F1/223 ,  H03F1/56 ,  H03F3/193 ,  H03F3/211 ,  H03F3/245 ,  H03F3/72 ,  H03F2200/18 ,  H03F2200/222 ,  H03F2200/231 ,  H03F2200/234 ,  H03F2200/249 ,  H03F2200/252 ,  H03F2200/321 ,  H03F2200/366 ,  H03F2200/387 ,  H03F2200/411 ,  H03F2200/42 ,  H03F2200/432 ,  H03F2200/451 ,  H03F2200/522 ,  H03F2200/555 ,  H03F2200/61 ,  H03F2200/75 ,  H03F2203/21106 ,  H03F2203/21136 ,  H03F2203/21139 ,  H03F2203/21142 ,  H03F2203/21178 ,  H03F2203/7215 ,  H03F2203/7236 ,  H03G1/0029 ,  H03G1/0088 ,  H03G3/001 ,  H03G3/007 ,  H03G3/3042

Abstract: In one embodiment, the present disclosure includes a circuit comprising a first power amplifier stage having an input to receive an input signal, an output coupled to an output node, the first power amplifier stage receiving a time-varying power supply voltage. The circuit further includes a second power amplifier stage configured in parallel with the first power amplifier stage having an input to receive the input signal, an output coupled to the output node, the second power amplifier stage receiving the time-varying power supply voltage. A first gain of the first power amplifier stage decreases when the power supply voltage is in a first low voltage range, and a second gain of the second power amplifier stage compensates for the decreasing gain of the first power amplifier stage in the first low voltage range.

Abstract translation: 在一个实施例中，本公开包括电路，该电路包括具有用于接收输入信号的输入的第一功率放大器级，耦合到输出节点的输出，第一功率放大器级接收时变电源电压。 电路还包括与第一功率放大器并联配置的第二功率放大器级，其具有用于接收输入信号的输入，耦合到输出节点的输出，第二功率放大器级接收时变电源电压。 当电源电压处于第一低电压范围时，第一功率放大器级的第一增益减小，并且第二功率放大器级的第二增益补偿第一低功率放大器级在第一低电压范围内的增益减小 。

公开(公告)号：US09035421B2

公开(公告)日：2015-05-19

申请号：US13787219

申请日：2013-03-06

Applicant: QUALCOMM Incorporated

Inventor： Young K. Song ,  Yunseo Park ,  Xiaonan Zhang ,  Ryan D. Lane ,  Babak Nejati ,  Aristotele Hadjichristos ,  Xiaoming Chen

IPC: H01L27/08 ,  H01L23/522 ,  H01L23/00 ,  H01L23/64 ,  H01L25/065 ,  H01L25/07 ,  H01L25/11

CPC classification number: H01L23/5227 ,  H01L23/645 ,  H01L24/02 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/074 ,  H01L25/117 ,  H01L2224/02375 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/05569 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2225/06513 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/15331 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/00012

Abstract: Some novel features pertain to a first example provides a semiconductor device that includes a printed circuit board (PCB), asset of solder balls and a die. The PCB includes a first metal layer. The set of solder balls is coupled to the PCB. The die is coupled to the PCB through the set of solder balls. The die includes a second metal layer and a third metal layer. The first metal layer of the PCB, the set of solder balls, the second and third metal layers of the die are configured to operate as an inductor in the semiconductor device. In some implementations, the die further includes a passivation layer. The passivation layer is positioned between the second metal layer and the third metal layer. In some implementations, the second metal layer is positioned between the passivation layer and the set of solder balls.

Abstract translation: 一些新颖特征涉及第一示例，提供了包括印刷电路板（PCB），焊球和裸片的资产的半导体器件。 PCB包括第一金属层。 该组焊球与PCB相连。 模具通过一组焊球耦合到PCB。 模具包括第二金属层和第三金属层。 PCB的第一金属层，焊球集合，管芯的第二和第三金属层被配置为在半导体器件中作为电感器工作。 在一些实施方式中，芯片还包括钝化层。 钝化层位于第二金属层和第三金属层之间。 在一些实施方案中，第二金属层位于钝化层和一组焊球之间。

公开(公告)号：US20130127546A1

公开(公告)日：2013-05-23

申请号：US13741592

申请日：2013-01-15

Applicant: QUALCOMM Incorporated

Inventor： Thomas Domenick Marra ,  Aristotele Hadjichristos

IPC: H03F1/30

CPC classification number: H03F1/301 ,  H03F1/30 ,  H03F3/04 ,  H03F3/189

Abstract: Techniques for monitoring and controlling bias current of amplifiers are described. In an exemplary design, an apparatus may include an amplifier and a bias circuit. The amplifier may include at least one transistor coupled to an inductor. The bias circuit may generate at least one bias voltage for the at least one transistor in the amplifier to obtain a target bias current for the amplifier. The bias circuit may generate the at least one bias voltage based on a voltage across the inductor in the amplifier, or a current through a current mirror formed with one of the at least one transistor in the amplifier, or a gate-to-source voltage of one of the at least one transistor in the amplifier, or a voltage in a replica circuit replicating the amplifier, or a current applied to the amplifier with a switched mode power supply disabled.

公开(公告)号：US20140105336A1

公开(公告)日：2014-04-17

申请号：US14133280

申请日：2013-12-18

Applicant: QUALCOMM INCORPORATED

Inventor： Junxiong Deng ,  Aristotele Hadjichristos ,  Aleksandar Tasic ,  Fredric Bossu

IPC: H04W52/02 ,  H03G3/20

CPC classification number: H04W52/0206 ,  H03G3/20 ,  H04B1/16

Abstract: An exemplary embodiment disclosed comprises a mixer having a plurality of input leads; a first degenerative impedance element coupled to a first input lead of the mixer; a second degenerative impedance element coupled to a second input lead of the mixer; and a local oscillator (LO) system comprising a plurality of duty cycle modes to generate a LO signal for the mixer, the local oscillator system operates in a first duty cycle based on a first gain state of the mixer, and in a second duty cycle based on a second gain state of the mixer.

Abstract translation: 公开的示例性实施例包括具有多个输入引线的混合器; 耦合到混合器的第一输入引线的第一退化阻抗元件; 耦合到混合器的第二输入引线的第二退化阻抗元件; 以及本地振荡器（LO）系统，其包括多个占空比模式以产生混频器的LO信号，本地振荡器系统基于混频器的第一增益状态在第一占空比中工作，并且在第二占空比 基于混频器的第二增益状态。

公开(公告)号：US20140073267A1

公开(公告)日：2014-03-13

申请号：US13653030

申请日：2012-10-16

Applicant: QUALCOMM INCORPORATED

Inventor： Jose Cabanillas ,  Aristotele Hadjichristos ,  Per O. Kristensen ,  Mohan V. Puntambekar

IPC: H04B1/44

CPC classification number: H03H11/344 ,  H01P1/213 ,  H03H7/465 ,  H03H11/30 ,  H03H2007/386 ,  H04B1/0458

Abstract: Techniques to implement a filter for a selected signal path by reusing a circuit component in an unselected signal path are disclosed. In an exemplary design, an apparatus includes first, second, and third circuits. The first circuit passes a first radio frequency (RF) signal to an antenna when a first signal path is selected. The second circuit passes a second RF signal to the antenna when a second signal path is selected. The third circuit is selectively coupled to the first circuit, e.g., via a switch. The first and third circuits form a filter for the second RF signal (e.g., to attenuate a harmonic of the second RF signal) when the second signal path is selected and the first signal path is unselected. The first circuit may include a series inductor, and the third circuit may include a shunt capacitor.

Abstract translation: 公开了通过重新使用未选信号路径中的电路部件来实现所选信号路径的滤波器的技术。 在示例性设计中，装置包括第一，第二和第三电路。 当选择第一信号路径时，第一电路将第一射频（RF）信号传递到天线。 当选择第二信号路径时，第二电路将第二RF信号传递到天线。 第三电路例如经由开关选择性地耦合到第一电路。 当选择第二信号路径并且未选择第一信号路径时，第一和第三电路形成用于第二RF信号的滤波器（例如，衰减第二RF信号的谐波）。 第一电路可以包括串联电感器，并且第三电路可以包括并联电容器。

公开(公告)号：US10424641B1

公开(公告)日：2019-09-24

申请号：US15958185

申请日：2018-04-20

Applicant: QUALCOMM Incorporated

Inventor： Qingqing Liang ,  Francesco Carobolante ,  Fabio Alessio Marino ,  Narasimhulu Kanike ,  Paolo Menegoli ,  Aristotele Hadjichristos

IPC: H01L29/94 ,  H01L29/10 ,  H01L29/78 ,  H01L29/93 ,  H01L29/66

Abstract: Certain aspects of the present disclosure provide a semiconductor device. One example semiconductor device generally includes a first semiconductor region; a first non-insulative region disposed adjacent to a first lateral side of the first semiconductor region; a second non-insulative region disposed adjacent to a second lateral side of the first semiconductor region, the second lateral side being opposite to the first lateral side; a second semiconductor region disposed adjacent to a third lateral side of the first semiconductor region, the second semiconductor region and the first semiconductor region having at least one of different doping types or different doping concentrations; an insulative layer adjacent to a top side of the first semiconductor region; and a third non-insulative region, the insulative layer being disposed between the third non-insulative region and the first semiconductor region.

公开(公告)号：US09160377B2

公开(公告)日：2015-10-13

申请号：US13720851

申请日：2012-12-19

Applicant: QUALCOMM Incorporated

Inventor： Chang-Ho Lee ,  Woonyun Kim ,  Minsik Ahn ,  Jeongwon Cha ,  Yunseo Park ,  Aristotele Hadjichristos

IPC: H03F1/02 ,  H04B1/04 ,  H03F3/72 ,  H03H7/38

CPC classification number: H04B1/0458 ,  H03F1/0277 ,  H03F3/72 ,  H03F2203/7239 ,  H03H7/38 ,  H04B1/0483

Abstract: Exemplary embodiments are directed to an amplifier module which may comprise a transmit path including a first amplifier and a second amplifier. The exemplary amplifier module may further include a transformer coupled between the first amplifier and the second amplifier and switchably configured for coupling the first amplifier in series with the second amplifier in a first mode and coupling the first amplifier to bypass the second amplifier in a second mode.

Abstract translation: 示例性实施例涉及放大器模块，其可以包括包括第一放大器和第二放大器的发射路径。 示例性放大器模块还可以包括耦合在第一放大器和第二放大器之间的变压器，并且可切换地配置用于以第一模式将第一放大器与第二放大器串联耦合，并且以第二模式耦合第一放大器旁路第二放大器 。