公开(公告)号：US09360627B2

公开(公告)日：2016-06-07

申请号：US14254173

申请日：2014-04-16

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Lei Bi ,  Roy Meade ,  Gurtej Sandhu

IPC: G02B6/12 ,  G02B6/293 ,  G02F1/025

CPC classification number: G02B6/29338 ,  G02B6/29341 ,  G02B6/29398 ,  G02F1/025 ,  G02F2203/21

Abstract: A method and apparatus are described which provide for wavelength drift compensation in a photonic waveguide by application of an electric field to a waveguide having a strained waveguide core.

Abstract translation: 描述了通过向具有应变波导芯的波导施加电场来提供光子波导中的波长漂移补偿的方法和装置。

公开(公告)号：US20160086664A1

公开(公告)日：2016-03-24

申请号：US14960953

申请日：2015-12-07

Applicant: Micron Technology, Inc.

Inventor： Durai Vishak Nirmal Ramaswamy ,  Lei Bi ,  Beth R. Cook ,  Dale W. Collins

IPC: G11C13/00 ,  H01L45/00

CPC classification number: H01L45/1233 ,  G11C13/0007 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2213/12 ,  G11C2213/51 ,  G11C2213/55 ,  H01L21/02414 ,  H01L21/02483 ,  H01L27/24 ,  H01L27/2427 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1616

Abstract: Electronic apparatus, systems, and methods can include a resistive memory cell having a structured as an operably variable resistance region between two electrodes and a metallic barrier disposed in a region between the dielectric and one of the two electrodes. The metallic barrier can have a structure and a material composition to provide oxygen diffusivity above a first threshold during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold during a retention state of the resistive memory cell. Additional apparatus, systems, and methods are disclosed.

Abstract translation: 电子设备，系统和方法可以包括具有结构化为两个电极之间的可操作变化的电阻区域的电阻式存储单元和设置在电介质和两个电极中的一个之间的区域中的金属屏障。 金属屏障可以具有结构和材料组成，以在阻性存储器单元的保持状态期间在电阻存储器单元的编程或擦除操作期间提供高于第一阈值的氧扩散系数和低于第二阈值的氧扩散系数。 公开了附加装置，系统和方法。

公开(公告)号：US20150301283A1

公开(公告)日：2015-10-22

申请号：US14254173

申请日：2014-04-16

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Lei Bi ,  Roy Meade ,  Gurtej Sandhu

IPC: G02B6/36 ,  H01P11/00

CPC classification number: G02B6/29338 ,  G02B6/29341 ,  G02B6/29398 ,  G02F1/025 ,  G02F2203/21

Abstract: A method and apparatus are described which provide for wavelength drift compensation in a photonic waveguide by application of an electric field to a waveguide having a strained waveguide core.

Abstract translation: 描述了通过向具有应变波导芯的波导施加电场来提供光子波导中的波长漂移补偿的方法和装置。

公开(公告)号：US20140106534A1

公开(公告)日：2014-04-17

申请号：US14105623

申请日：2013-12-13

Applicant: Micron Technology, Inc.

Inventor： D.V. Nirmal Ramaswamy ,  Beth R. Cook ,  Lei Bi ,  Wayne Huang ,  Ian C. Laboriante

IPC: H01L45/00

CPC classification number: H01L45/1608 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1675

Abstract: A method of forming a memory cell includes forming one of multivalent metal oxide material or oxygen-containing dielectric material over a first conductive structure. An outer surface of the multivalent metal oxide material or the oxygen-containing dielectric material is treated with an organic base. The other of the multivalent metal oxide material or oxygen-containing dielectric material is formed over the treated outer surface. A second conductive structure is formed over the other of the multivalent metal oxide material or oxygen-containing dielectric material.

Abstract translation: 形成存储单元的方法包括在第一导电结构上形成多价金属氧化物材料或含氧电介质材料之一。 用有机碱处理多价金属氧化物材料或含氧电介质材料的外表面。 另外的多价金属氧化物材料或含氧电介质材料形成在经处理的外表面上。 在多价金属氧化物材料或含氧介电材料的另一个上形成第二导电结构。

公开(公告)号：US10699784B2

公开(公告)日：2020-06-30

申请号：US16057170

申请日：2018-08-07

Applicant: Micron Technology, Inc.

Inventor： D.V. Nirmal Ramaswamy ,  Gurtej S. Sandhu ,  Lei Bi ,  Adam D. Johnson ,  Brent Keeth ,  Alessandro Calderoni ,  Scott E. Sills

IPC: G11C13/00 ,  G11C11/16

Abstract: The present disclosure includes apparatuses and methods for sensing a resistive memory cell. A number of embodiments include performing a sensing operation on a memory cell to determine a current value associated with the memory cell, applying a programming signal to the memory cell, and determining a data state of the memory cell based on the current value associated with the memory cell before applying the programming signal and a current value associated with the memory cell after applying the programming signal.

公开(公告)号：US10656354B2

公开(公告)日：2020-05-19

申请号：US15936033

申请日：2018-03-26

Applicant: Micron Technology, Inc.

Inventor： Gurtej Sandhu ,  Roy Meade ,  Lei Bi ,  John Smythe

IPC: G02B6/42 ,  G02B6/30 ,  G02B6/32

Abstract: A structure for optically aligning an optical fiber to a photonic device and method of fabrication of same. The structure optically aligns an optical fiber to the photonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads.

公开(公告)号：US10090462B2

公开(公告)日：2018-10-02

申请号：US14960953

申请日：2015-12-07

Applicant: Micron Technology, Inc.

Inventor： Durai Vishak Nirmal Ramaswamy ,  Lei Bi ,  Beth R. Cook ,  Dale W. Collins

IPC: H01L45/00 ,  H01L27/24 ,  H01L21/02 ,  G11C13/00

Abstract: Electronic apparatus, systems, and methods can include a resistive memory cell having a structured as an operably variable resistance region between two electrodes and a metallic barrier disposed in a region between the dielectric and one of the two electrodes. The metallic barrier can have a structure and a material composition to provide oxygen diffusivity above a first threshold during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold during a retention state of the resistive memory cell. Additional apparatus, systems, and methods are disclosed.

公开(公告)号：US09324943B2

公开(公告)日：2016-04-26

申请号：US14451179

申请日：2014-08-04

Applicant: Micron Technology, Inc.

Inventor： Lei Bi ,  Beth R. Cook ,  Marko Milojevic ,  Durai Vishak Nirmal Ramaswamy

IPC: G11C11/00 ,  H01L45/00 ,  G11C13/00 ,  H01L27/24

CPC classification number: H01L45/08 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0035 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2013/0083 ,  G11C2213/35 ,  H01L27/2463 ,  H01L45/145

Abstract: Apparatus, devices, systems, and methods are described that include filamentary memory cells. Mechanisms to substantially remove the filaments in the devices are described, so that the logical state of a memory cell that includes the removable filament can be detected. Additional apparatus, systems, and methods are described.

Abstract translation: 描述了包括丝状记忆单元的装置，装置，系统和方法。 描述了基本上去除器件中的细丝的机理，使得可以检测到包括可除去细丝的存储器单元的逻辑状态。 描述了附加装置，系统和方法。

公开(公告)号：US20140339491A1

公开(公告)日：2014-11-20

申请号：US14451179

申请日：2014-08-04

Applicant: Micron Technology, Inc.

Inventor： Lei Bi ,  Beth R. Cook ,  Marko Milojevic ,  Durai Vishak Nirmal Ramaswamy

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/08 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0035 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2013/0083 ,  G11C2213/35 ,  H01L27/2463 ,  H01L45/145

Abstract: Apparatus, devices, systems, and methods are described that include filamentary memory cells. Mechanisms to substantially remove the filaments in the devices are described, so that the logical state of a memory cell that includes the that includes the removable filament can be detected. Additional apparatus, systems, and methods are described.

Abstract translation: 描述了包括丝状记忆单元的装置，装置，系统和方法。 描述了基本上去除装置中的长丝的机构，使得可以检测到包括可去除细丝的存储单元的逻辑状态。 描述了附加装置，系统和方法。

公开(公告)号：US20140185983A1

公开(公告)日：2014-07-03

申请号：US13732557

申请日：2013-01-02

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Gurtej Sandhu ,  Roy Meade ,  Lei Bi ,  John Smythe

IPC: G02B6/32

CPC classification number: G02B6/4226 ,  G02B6/30 ,  G02B6/32 ,  G02B6/4204 ,  G02B6/4206 ,  G02B6/4225 ,  G02B6/4227 ,  G02B6/4239 ,  Y10T29/42 ,  Y10T29/49

Abstract: A structure for optically aligning an optical fiber to a photonic device and method of fabrication of same. The structure optically aligns an optical fiber to the photonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads.

Abstract translation: 用于将光纤与光子器件光学对准的结构及其制造方法。 该结构将光纤与光子器件光学对准，使用透镜之间的两个可由致动器头移动的透镜。 透镜可以通过与致动器头相关联的相应的动力源移动。