Abstract:
A polishing system includes a carriage arm having an actuator disposed on a lower surface thereof. The actuator includes a piston and a roller coupled to a distal end of the piston. The polishing system includes a polishing pad and a substrate carrier suspended from the carriage arm and configured to apply a pressure between a substrate and the polishing pad. The substrate carrier includes a housing, a retaining ring, and a membrane. The substrate carrier includes an upper load ring disposed in the housing. The roller of the actuator is configured to contact the upper load ring during relative rotation between the substrate carrier and the carriage arm. The actuator is configured to apply a load to a portion of the upper load ring thereby altering the pressure applied between the substrate and the polishing pad.
Abstract:
Embodiments of the present disclosure provide a multiple disk pad conditioner and methods of using the multiple disk pad conditioner during a chemical mechanical polishing (CMP) process. The multiple disk pad conditioner has a plurality of conditioning heads having conditioning disks affixed thereto. The multiple disk pad conditioner can include a conditioning arm, and a plurality of conditioning heads attached to the conditioning arm. Each of the plurality of conditioning heads has a conditioning disk affixed thereto. In some embodiments, each of the conditioning heads include a rotational axis, wherein each of the rotational axes is disposed a distance apart in a first direction that extends along the length of the conditioning arm.
Abstract:
An apparatus for chemical mechanical polishing (CMP) of a substrate is described herein. The apparatus includes an extension disposed between a retaining ring and a chucking membrane. The extension is disposed radially outward from the edge of the substrate and is configured to contact the retaining ring during substrate processing. The extension provides a repeatable and controlled point of contact between the retaining ring and the chucking membrane. The extension may have multiple configurations, such that the contact point between the retaining ring and the chucking membrane is set at a pre-determined location or such that the contact point is moveable by an adjustable stop.
Abstract:
A chemical mechanical polishing system is provided. The chemical mechanical polishing system includes a platen, a load cup, a hub, a first polishing arm cantilevered from the hub and rotatable around the centerline of the hub between the platen and load cup, and a second polishing arm cantilevered from the hub and rotatable around the centerline of the hub between the platen and load cup the second arm rotatable independently from the hub.
Abstract:
Embodiments described herein generally relate to equipment used in the manufacturing of electronic devices, and more particularly, to a cleaning system, cleaning system hardware and related methods which may be used to transport and clean the surface of a substrate. According to one embodiment, a blade handling assembly for handling a substrate in a cleaning system includes a gripping assembly including a pair of gripping blades, the blades operable with a gripping actuator to hold a substrate at its edges. The assembly includes a first blade actuator for moving the gripping assembly and substrate between a horizontal and a vertical orientation utilizing a first axis. The assembly includes a second blade actuator for moving the vertically oriented gripping assembly and substrate 180 degrees utilizing a second axis, thereby causing the substrate to face an opposite direction. Movement utilizing the first axis results in rotation of the first and second blade actuators and movement utilizing the second axis results in rotation of only the second blade actuator.
Abstract:
The present disclosure is directed towards polishing modules for performing chemical mechanical polishing of a substrate. The substrate may be a semiconductor substrate. The polishing modules described have a plurality of pads, such as polishing pads, disposed within a single polishing station. The pads are configured to remain stationary during processing, such as during polishing or buff operations. Either an x-y gantry assembly or a head actuation assembly is coupled to a system body of a polishing module and is configured to move a carrier head over the pads. Between process operations the polishing pads may be indexed to expose a new polishing pad to the carrier head.
Abstract:
Embodiments herein relate to a retaining ring for use in a polishing process. The retaining ring includes an annular body having an upper surface and a lower surface. An inner surface is connected to the upper surface and the lower surface. The inner surface includes one or more surfaces that are used to retain a substrate during processing. The one or more surfaces have an angle relative to a central axis of the retaining ring. The inner surface also includes a plurality of facets. Channels are disposed within the retaining ring to allow passage of a polishing fluid from an inner surface to an outer surface of the retaining ring disposed opposite of the inner surface.
Abstract:
Embodiments herein include high throughput density chemical mechanical polishing (CMP) modules and customizable modular CMP systems formed thereof. In one embodiment, a polishing module features a carrier support module, a carrier loading station, and a polishing station. The carrier support module features a carrier platform and one or more carrier assemblies. The one or more carrier assemblies each comprise a corresponding carrier head suspended from the carrier platform. The carrier loading station is used to transfer substrates to and from the carrier heads. The polishing station comprises a polishing platen. The carrier support module, the substrate loading station, and the polishing station comprise a one-to-one-to-one relationship within each of the polishing modules. The carrier support module is positioned to move the one or more carrier assemblies between a substrate polishing position disposed above the polishing platen and a substrate transfer position disposed above the substrate loading station.
Abstract:
A polishing system is provided, including a carrier with an offset distance. The offset distance allows a shifted carrier head to cover more surface area of the polishing surface. The offset distance effectively provides an additional rotation of the carrier head about the axis, which allows for a greater area traversed on the polishing surface, improving chemical mechanical polishing uniformity on the substrate.
Abstract:
A polishing head for chemical mechanical planarization is provided. The polishing head includes a housing and a flexible membrane secured to the housing. At least a first, second, and third pressurizable chamber are disposed in the housing and each chamber contacts the flexible membrane. A first pressure delivery channel couples to the first chamber. A second pressure delivery channel couples to the third chamber. A first pressure feed line couples the first pressure delivery channel to the second chamber. A second pressure feed line couples the second pressure delivery channel to the second chamber. A first manually movable plug interfaces with the first pressure feed line to allow or block pressure from the first pressure delivery channel to the second chamber. A second manually movable plug interfaces with the second pressure feed line to allow or block pressure from the first pressure delivery channel to the second chamber.