公开(公告)号：US3626184A

公开(公告)日：1971-12-07

申请号：US3626184D

申请日：1970-03-05

Applicant: ATOMIC ENERGY COMMISSION

Inventor： CREWE ALBERT V

IPC: H01J37/04 ,  H01J37/05 ,  H01J37/22 ,  H01J37/244 ,  H01J37/28 ,  H01J49/48

CPC classification number: H01J37/28 ,  H01J37/045 ,  H01J37/05 ,  H01J37/22 ,  H01J37/244 ,  H01J49/484 ,  H01J2237/24465 ,  H01J2237/24475 ,  H01J2237/24485 ,  H01J2237/2449 ,  H01J2237/24507 ,  H01J2237/24585

Abstract: In an electron microscope transmitted electrons are detected according to whether they are unscattered, elastically scattered or inelastically scattered by the specimen. The elastically scattered electrons are further separated according to the magnitude of the scattering. Signals from the separate detectors can be used separately or combined as desired to enhance the information obtained from a specimen.

公开(公告)号：US20240304413A1

公开(公告)日：2024-09-12

申请号：US18597676

申请日：2024-03-06

Applicant: IMS Nanofabrication GmbH

Inventor： Christoph Spengler ,  Michael Haberler

IPC: H01J37/304 ,  H01J37/04 ,  H01J37/153 ,  H01J37/22 ,  H01J37/302 ,  H01J37/317

CPC classification number: H01J37/304 ,  H01J37/045 ,  H01J37/153 ,  H01J37/222 ,  H01J37/3023 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/31777

Abstract: The invention proposes adjusting the optical imaging system of a charged-particle multi-beam processing apparatus with regard to spatial and angular image distortion of the beam field, which describes the deviation of landing positions and landing angles of beamlets from respective nominal values within the beam field. Starting from a determination of the image distortion, so-called fingerprints are determined, which represent the change of image distortion effected by a unit change of a respective operating parameter of a component of the projection optics; then values of operating parameters are obtained which optimize a corrected distortion obtained from a superposition of the image distortion and a change of operating parameters that causes a variation of the image distortion, as expressed by a linear combination of said fingerprints. The optimizing values thus obtained are applied to the respective optical elements of the projection optics. The procedure may suitable be iterated until the distortion is suitably optimized.

公开(公告)号：US11929232B2

公开(公告)日：2024-03-12

申请号：US17026044

申请日：2020-09-18

Applicant: ASML Netherlands B.V.

Inventor： Frank Nan Zhang ,  Zhongwei Chen ,  Yixiang Wang ,  Ying Crystal Shen

IPC: H01J37/26 ,  H01J37/04 ,  H01J37/28

CPC classification number: H01J37/265 ,  H01J37/045 ,  H01J37/266 ,  H01J37/28 ,  H01J2237/0044 ,  H01J2237/0048 ,  H01J2237/0453 ,  H01J2237/0455 ,  H01J2237/0458 ,  H01J2237/049 ,  H01J2237/28 ,  H01J2237/2817

Abstract: Systems and methods for implementing charged particle flooding in a charged particle beam apparatus are disclosed. According to certain embodiments, a charged particle beam system includes a charged particle source and a controller which controls the charged particle beam system to emit a charged particle beam in a first mode where the beam is defocused and a second mode where the beam is focused on a surface of a sample.

公开(公告)号：US20230335366A1

公开(公告)日：2023-10-19

申请号：US18213229

申请日：2023-06-22

Applicant: ASML Netherlands B.V.

Inventor： Alexander Hendrik Vincent VAN VEEN ,  Derk Ferdinand WALVOORT

IPC: H01J37/04 ,  H01J37/317

CPC classification number: H01J37/045 ,  H01J37/3177 ,  H01J2237/002 ,  H01J2237/0437

Abstract: The invention relates to an exposure apparatus and a method for projecting a charged particle beam onto a target. The exposure apparatus comprises a charged particle optical arrangement comprising a charged particle source for generating a charged particle beam and a charged particle blocking element and/or a current limiting element for blocking at least a part of a charged particle beam from a charged particle source. The charged particle blocking element and the current limiting element comprise a substantially flat substrate provided with an absorbing layer comprising Boron, Carbon or Beryllium. The substrate further preferably comprises one or more apertures for transmitting charged particles. The absorbing layer is arranged spaced apart from the at least one aperture.

公开(公告)号：US20230317399A1

公开(公告)日：2023-10-05

申请号：US18128405

申请日：2023-03-30

Applicant: Hitachi High-Tech Corporation

Inventor： Toshimasa KAMEDA ,  Tomoyo SASAKI ,  Shunsuke MIZUTANI

IPC: H01J37/04

CPC classification number: H01J37/045 ,  H01J2237/24528

Abstract: The invention is directed to suppress charge of a region of interest or damage in the region of interest caused by blanking. A charged particle beam device includes: a deflector configured to scan a region of interest with a beam emitted from a beam source; a second deflector configured to retract the beam to outside of the region of interest after scanning the region of interest with the beam; and one or more computer systems including one or more processors configured to execute a program stored in a storage medium, in which the one or more computer systems determine a retraction direction or a retraction position of the beam (Step S402) based on a scanning direction of the beam in the region.

公开(公告)号：US11728123B2

公开(公告)日：2023-08-15

申请号：US17409726

申请日：2021-08-23

Applicant: Alexander Hendrik Vincent Van Veen ,  Derk Ferdinand Walvoort

Inventor： Alexander Hendrik Vincent Van Veen ,  Derk Ferdinand Walvoort

IPC: H01J37/04 ,  H01J37/317

CPC classification number: H01J37/045 ,  H01J37/3177 ,  H01J2237/002 ,  H01J2237/0437

Abstract: The invention relates to an exposure apparatus and a method for projecting a charged particle beam onto a target. The exposure apparatus comprises a charged particle optical arrangement comprising a charged particle source for generating a charged particle beam and a charged particle blocking element and/or a current limiting element for blocking at least a part of a charged particle beam from a charged particle source. The charged particle blocking element and the current limiting element comprise a substantially flat substrate provided with an absorbing layer comprising Boron, Carbon or Beryllium. The substrate further preferably comprises one or more apertures for transmitting charged particles. The absorbing layer is arranged spaced apart from the at least one aperture.

公开(公告)号：US20230253175A1

公开(公告)日：2023-08-10

申请号：US18015554

申请日：2021-04-13

Applicant: Hitachi, Ltd.

Inventor： Kenta TAKAHASHI ,  Satoru OKURA ,  Yuki ITO ,  Kohei YAMADA

IPC: H01J37/04 ,  H01J37/147 ,  A61N5/10

CPC classification number: H01J37/045 ,  H01J37/1474 ,  A61N5/1067 ,  A61N5/1071 ,  H01J2237/24507 ,  H01J2237/0473 ,  A61N2005/1087

Abstract: In a particle beam irradiation system, upon receipt of a signal to stop irradiation of a charged particle beam, the signal outputted from a scanning controller, an accelerator and transport system controller stops emission of the charged particle beam from a charged particle beam generation unit to the irradiation unit, the scanning controller determines, according to an irradiation dose of the charged particle beam at one of a plurality of spots that has been irradiated with the charged particle beam until immediately before the accelerator and transport system controller stops the emission, the irradiation dose measured by the irradiation dose monitor from when the signal to stop the irradiation is outputted, whether or not to skip the irradiation of the charged particle beam at another one of the plurality of spots subsequent to the one of the plurality of spots, so as to control the accelerator and transport system controller.

公开(公告)号：US20230187172A1

公开(公告)日：2023-06-15

申请号：US18158570

申请日：2023-01-24

Applicant: NuFlare Technology, Inc.

Inventor： Yasuo KATO ,  Ryoh KAWANA ,  Masao HAYAMI

IPC: H01J37/304 ,  H01J37/317 ,  G03F7/20

CPC classification number: H01J37/3045 ,  H01J37/3177 ,  G03F7/2059 ,  H01J37/045

Abstract: A multi-charged particle beam writing apparatus includes a beam forming mechanism to form multi-charged-particle-beams, a block region forming circuit to form plural block regions from an irradiation region of the multi-charged-particle-beams formed by combining plural sub-regions each surrounded by a beam, being different from each other, and plural other beams adjacent to the beam in the multi-charged-particle-beams, and a writing mechanism to perform, using the multi-charged-particle-beams, multiple writing such that irradiation of each block region of the plural block regions is at least performed by any one of writing processing of the multiple writing, and such that each writing processing of the multiple writing is performed to write a writing region of a target object in a manner of covering the writing region without overlapping by, using one of the plural block regions, irradiation of the one of the plural block regions.

公开(公告)号：US20190198294A1

公开(公告)日：2019-06-27

申请号：US16228830

申请日：2018-12-21

Applicant: NuFlare Technology, Inc.

Inventor： Hideo Inoue

IPC: H01J37/317 ,  H01J37/147 ,  H01J37/04 ,  H01J37/302

CPC classification number: H01J37/3177 ,  H01J37/045 ,  H01J37/1471 ,  H01J37/3026 ,  H01J2237/0435 ,  H01J2237/30472 ,  H01J2237/31754

Abstract: A multiple charged particle writing method includes performing a tracking operation by shifting the main deflection position of multiple beams using charged particle beams in the direction of stage movement so that the main deflection position of the multiple beams follows the stage movement while a predetermined number of beam shots of the multiple beams are performed, and shifting the sub deflection position of the multiple beams so that each beam of the multiple beams straddles rectangular regions among plural rectangular regions obtained by dividing a writing region of a target object into meshes by the pitch size between beams of the multiple beams, and the each beam is applied to a different position in each of the rectangular regions straddled, and applying a predetermined number of shots per beam using plural beams in the multiple beams to each of the plural rectangular regions, during the tracking operation.

公开(公告)号：US20190155160A1

公开(公告)日：2019-05-23

申请号：US16252427

申请日：2019-01-18

Applicant: Intel Corporation

Inventor： Yan A. BORODOVSKY ,  Donald W. NELSON ,  Mark C. PHILLIPS

IPC: G03F7/20 ,  H01L21/311 ,  H01L21/027 ,  H01J37/317

CPC classification number: G03F7/2037 ,  H01J37/045 ,  H01J37/3026 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/303 ,  H01J2237/30422 ,  H01J2237/30438 ,  H01J2237/31762 ,  H01J2237/31764 ,  H01L21/0277 ,  H01L21/31144

Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.