MULTIPLE CHARGED PARTICLE BEAM WRITING APPARATUS AND MULTIPLE CHARGED PARTICLE BEAM WRITING METHOD

    公开(公告)号:US20240429022A1

    公开(公告)日:2024-12-26

    申请号:US18823820

    申请日:2024-09-04

    Abstract: A multiple charged particle beam writing apparatus includes a dose-data-for-defect-position-generation-circuit to generate dose-data-for-defect which defines a dose for a defect at the defect position when the dose of the nonzero value is defined in the vicinal region, and a writing mechanism to write patterns on a sample using multiple charged particle beams, wherein, when performing the writing, a unit region where writing processing is to be performed is moved to a next unit region where a pattern was determined to exist, skipping a unit region where no pattern was determined to exist by a pattern-existence-determination-circuit, and correction is performed to reduce an excessive dose, resulting from the defective beam at any writing pass in plural writing passes of multiple writing, at another writing pass.

    MULTIPLE CHARGED PARTICLE BEAM WRITING APPARATUS AND MULTIPLE CHARGED PARTICLE BEAM WRITING METHOD

    公开(公告)号:US20250087452A1

    公开(公告)日:2025-03-13

    申请号:US18959954

    申请日:2024-11-26

    Abstract: A multiple-beam-writing-apparatus includes a defect-correction-data-generation-circuit to generate defect correction data defining a dose modulation rate for correction by distributing a dose at a position of a defective beam, being always-OFF, in the multiple beams to at least one of other pixels, using a dose distribution where each position in a unit region on a target object is defined by a uniform dose, regardless of writing pattern, a dose-correction-circuit to read, for each writing pattern, the defect correction data from the storage-device, to correct the individual dose at each position according to the writing pattern concerned by a dose distribution using a value obtained by multiplying the individual dose at each position by the dose modulation rate defined in the read defect correction data, and to obtain a corrected dose, and a writing-mechanism to write the writing pattern with the multiple beams of the corrected dose.

    MULTI-CHARGED PARTICLE BEAM WRITING APPARATUS, AND MULTI-CHARGED PARTICLE BEAM WRITING METHOD

    公开(公告)号:US20240242932A1

    公开(公告)日:2024-07-18

    申请号:US18621345

    申请日:2024-03-29

    CPC classification number: H01J37/3045 H01J37/3177 H01J2237/24507

    Abstract: A multi-charged particle beam writing apparatus includes a distribution ratio calculation circuit to calculate, for the each control grid and each combination of combinations, a dose distribution ratio for each beam of at least two beams forming a combination concerned in order to distribute a dose amount, which is to be applied to a control grid concerned, to the at least two beams forming the combination concerned such that a total of distribution dose amounts having been distributed to the at least two beams forming the combination concerned is substantially equivalent to the dose amount to be applied to the control grid concerned, and a combination selection circuit to select, for the each control grid, a combination in which a dose distribution ratio for the first beam is larger than a dose distribution ratio for at least one beam remaining in the at least two beams forming the combination concerned.

    MULTIPLE CHARGED PARTICLE BEAM WRITING APPARATUS AND MULTIPLE CHARGED PARTICLE BEAM WRITING METHOD

    公开(公告)号:US20220107569A1

    公开(公告)日:2022-04-07

    申请号:US17483947

    申请日:2021-09-24

    Abstract: A multiple charged particle beam writing apparatus includes a margined block region generation circuit to generate plural margined block regions each formed by adding a margin region to the periphery of each block region of plural block regions obtained by dividing the writing region of the target object, a detection circuit to detect a defective beam in multiple charged particle beams, a specifying circuit to specify, for each defective beam detected, a position irradiated with the defective beam, and an affiliation determination circuit to determine a margined block region, in the plural margined block regions, to which the position irradiated with the defective beam belongs, based on conditions set according to a sub-block region, in plural sub-block regions acquired by dividing the margined block region, in which the position irradiated with the defective beam in the multiple charged particle beams is located.

    MULTI CHARGED PARTICLE BEAM WRITING APPARATUS, AND MULTI CHARGED PARTICLE BEAM WRITING METHOD
    5.
    发明申请
    MULTI CHARGED PARTICLE BEAM WRITING APPARATUS, AND MULTI CHARGED PARTICLE BEAM WRITING METHOD 审中-公开
    多电荷粒子束写入装置和多次粒子束写入方法

    公开(公告)号:US20160181062A1

    公开(公告)日:2016-06-23

    申请号:US14969478

    申请日:2015-12-15

    Abstract: A multi charged particle beam writing apparatus includes a modulation rate data calculation processing circuitry to calculate, for each pixel being a unit region, a modulation rate of a beam to a pixel concerned and each modulation rate of a beam to at least one pixel at a periphery of the pixel concerned, and a corrected-dose calculation processing circuitry to calculate, for the each pixel, a corrected dose by adding a multiplied value obtained by multiplying the modulation rate of the pixel concerned in a modulation rate map by beam dose to the pixel concerned, and a multiplied value obtained by multiplying the modulation rate of the pixel concerned which becomes one of the at least one pixel at the periphery with respect to another pixel defined for the position of the pixel concerned by a beam dose to the another pixel.

    Abstract translation: 一种多带电粒子束写入装置,包括:调制率数据计算处理电路,用于针对每个像素为单位区域,将波束对于像素的调制率和波束的调制率计算为 以及校正剂量计算处理电路,通过将通过光束剂量将调制速率图中的相关像素的调制率相乘而获得的相乘值与每个像素一起计算校正剂量, 像素相关的像素相乘,并且通过将相对于相关像素的位置所定义的另一个像素的光束剂量相对于另一个像素的光束剂量相乘而成为相关像素的调制率, 。

    MULTI-CHARGED PARTICLE BEAM WRITING APPARATUS, AND MULTI-CHARGED PARTICLE BEAM WRITING METHOD

    公开(公告)号:US20230187172A1

    公开(公告)日:2023-06-15

    申请号:US18158570

    申请日:2023-01-24

    CPC classification number: H01J37/3045 H01J37/3177 G03F7/2059 H01J37/045

    Abstract: A multi-charged particle beam writing apparatus includes a beam forming mechanism to form multi-charged-particle-beams, a block region forming circuit to form plural block regions from an irradiation region of the multi-charged-particle-beams formed by combining plural sub-regions each surrounded by a beam, being different from each other, and plural other beams adjacent to the beam in the multi-charged-particle-beams, and a writing mechanism to perform, using the multi-charged-particle-beams, multiple writing such that irradiation of each block region of the plural block regions is at least performed by any one of writing processing of the multiple writing, and such that each writing processing of the multiple writing is performed to write a writing region of a target object in a manner of covering the writing region without overlapping by, using one of the plural block regions, irradiation of the one of the plural block regions.

    MULTI-CHARGED PARTICLE BEAM WRITING APPARATUS AND MULTI-CHARGED PARTICLE BEAM WRITING METHOD

    公开(公告)号:US20230095091A1

    公开(公告)日:2023-03-30

    申请号:US18057471

    申请日:2022-11-21

    Abstract: A multi-charged particle beam writing apparatus includes a circuit to allocate an additional dose to a position inside a writing target pattern in order to change a first dose distribution by an excessive dose, generated on the target object by applying, in the multi-charged particle beams, an excessive dose defective beam, to a second dose distribution whose center is located inside the writing target pattern and for which beam irradiation canceling out the excessive dose and being in a range of the first dose distribution exists; and a circuit to perform correction by subtracting an increased dose amount, generated at the center of the second dose distribution because of the additional dose being allocated, from a dose with which one of the center of the second dose distribution and a vicinity of the center of the second dose distribution is irradiated.

    CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD
    8.
    发明申请
    CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD 有权
    充电颗粒光束写字装置和充电颗粒光束写字方法

    公开(公告)号:US20160314933A1

    公开(公告)日:2016-10-27

    申请号:US15082063

    申请日:2016-03-28

    Abstract: A charged particle beam writing apparatus includes a processing circuitry configured to calculate a third proximity effect correction irradiation coefficient where at least one correction irradiation coefficient term up to k-th order term, in correction irradiation coefficient terms of from a first order term to a n-th order term for a first proximity effect correction irradiation coefficient which does not take account of a predetermined effect, are replaced by at least one correction irradiation coefficient term up to the k-th order term, for a second proximity effect correction irradiation coefficient which takes account of the predetermined effect; and a processing circuitry configured to calculate a dose by using the third proximity effect correction irradiation coefficient.

    Abstract translation: 带电粒子束写入装置包括处理电路,其被配置为计算第三邻近效应校正照射系数,其中在从第一阶项到n的校正照射系数项中至少一个校正照射系数项直到k阶项 对于第二接近效应校正照射系数,第二接近效应校正照射系数的第二邻近效应校正照射系数的第一接近效应校正照射系数的第二接近效应校正照射系数被替换为至少一个校正照射系数项,直到第k个阶项, 考虑到预定的效果; 以及处理电路,被配置为通过使用第三邻近效应校正照射系数来计算剂量。

    MULTI CHARGED PARTICLE BEAM WRITING APPARATUS AND MULTI CHARGED PARTICLE BEAM WRITING METHOD

    公开(公告)号:US20180005799A1

    公开(公告)日:2018-01-04

    申请号:US15637527

    申请日:2017-06-29

    Abstract: In one embodiment, a multi charged particle beam writing apparatus includes a blanking plate including a plurality of blankers, bitmap generation processing circuitry generating bitmap data for each writing pass of multi-pass writing, the bitmap data specifying irradiation time periods for a plurality of irradiation positions, a plurality of dose correction units configured to receive bitmap subdata items obtained by dividing the bitmap data from the bitmap generation processing circuitry, and correct the irradiation time periods to generate a plurality of dose data items corresponding to respective processing ranges, and data transfer processing circuitry transferring the plurality of dose data items to the blanking plate through a plurality of signal line groups. Each of the signal line groups corresponds to the blankers located in a predetermined region of the blanking plate. The data transfer processing circuitry changes the signal line groups, used to transfer the plurality of dose data items generated by the respective dose correction units, for each writing pass.

    MULTI CHARGED PARTICLE BEAM WRITING APPARATUS AND MULTI CHARGED PARTICLE BEAM WRITING METHOD

    公开(公告)号:US20170229280A1

    公开(公告)日:2017-08-10

    申请号:US15423013

    申请日:2017-02-02

    Abstract: In one embodiment, a multi charged particle beam writing apparatus includes processing circuitry that is programmed to perform the function of a data region determination part determining a data region based on boundaries of pixels obtained by dividing a writing area of a substrate into mesh-shaped regions, an irradiation range of multiple charged particle beams, and boundaries of stripe segments obtained by dividing the writing area into segments having a predetermined width such that the segments are arranged in a predetermined direction, a deflection coordinate adjustment part adjusting deflection coordinates of the multiple charged particle beams such that the boundaries of the pixels are mapped to a boundary of the irradiation range, and a correction part calculating a corrected dose of each beam of the multiple charged particle beams by distributing, based on a positional relationship between the beam and pixels in the data region, a dose of the beam corresponding to a pixel in the data region calculated based on write data to one or more beams, and adding doses distributed to the beam, and a writing mechanism, including a charged particle beam source, a deflector, and a stage on which a target object is placed, and the writing mechanism deflecting the multiple charged particle beams based on the adjusted deflection coordinates and applying the beams each having the corrected dose to write a pattern.

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