公开(公告)号：US20160314933A1

公开(公告)日：2016-10-27

申请号：US15082063

申请日：2016-03-28

Applicant: NuFlare Technology, Inc.

Inventor： Yasuo KATO ,  Masafumi ISE ,  Ryoh KAWANA

IPC: H01J37/302 ,  H01J37/24 ,  H01J37/304

CPC classification number: H01J37/3026 ,  H01J2237/30455 ,  H01J2237/31769 ,  H01J2237/31796

Abstract: A charged particle beam writing apparatus includes a processing circuitry configured to calculate a third proximity effect correction irradiation coefficient where at least one correction irradiation coefficient term up to k-th order term, in correction irradiation coefficient terms of from a first order term to a n-th order term for a first proximity effect correction irradiation coefficient which does not take account of a predetermined effect, are replaced by at least one correction irradiation coefficient term up to the k-th order term, for a second proximity effect correction irradiation coefficient which takes account of the predetermined effect; and a processing circuitry configured to calculate a dose by using the third proximity effect correction irradiation coefficient.

Abstract translation: 带电粒子束写入装置包括处理电路，其被配置为计算第三邻近效应校正照射系数，其中在从第一阶项到n的校正照射系数项中至少一个校正照射系数项直到k阶项 对于第二接近效应校正照射系数，第二接近效应校正照射系数的第二邻近效应校正照射系数的第一接近效应校正照射系数的第二接近效应校正照射系数被替换为至少一个校正照射系数项，直到第k个阶项， 考虑到预定的效果; 以及处理电路，被配置为通过使用第三邻近效应校正照射系数来计算剂量。