知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

1098 records (took 0.023 seconds)

    Fiducial Design for Tilted or Glancing Mill Operations with a Charged Particle Beam
    181.
    发明申请
    Fiducial Design for Tilted or Glancing Mill Operations with a Charged Particle Beam 审中-公开
    带有带电粒子束的倾斜或碾磨机操作的基准设计

    公开(公告)号：US20150357159A1

    公开(公告)日：2015-12-10

    申请号：US14758466

    申请日：2013-12-30

    Applicant: FEI COMPANY

    Inventor： Stacey Stone ,  Sang Hoon Lee ,  Jeffrey Blackwood ,  Michael Schmidt ,  Hyun Hwa Kim

    IPC: H01J37/317

    CPC classification number: H01J37/317 ,  H01J37/3056 ,  H01J2237/221 ,  H01J2237/226 ,  H01J2237/2814 ,  H01J2237/31745

    Abstract: A method for analyzing a sample with a charged particle beam including directing the beam toward the sample surface; milling the surface to expose a second surface in the sample in which the end of the second surface distal to ion source is milled to a greater depth relative to a reference depth than the end of the first surface proximal to ion source; directing the charged particle beam toward the second surface to form one or more images of the second surface; forming images of the cross sections of the multiple adjacent features of interest by detecting the interaction of the electron beam with the second surface; assembling the images of the cross section into a three-dimensional model of one or more of the features of interest. A method for forming an improved fiducial and determining the depth of an exposed feature in a nanoscale three-dimensional structure is presented.

    Abstract translation: 一种用于分析具有带电粒子束的样品的方法，包括将束朝向样品表面引导; 铣削表面以暴露样品中的第二表面，其中远离离子源的第二表面的端部相对于参考深度比距离离子源的第一表面的端部更深的深度; 将带电粒子束引向第二表面以形成第二表面的一个或多个图像; 通过检测电子束与第二表面的相互作用形成感兴趣的多个相邻特征的横截面的图像; 将横截面的图像组装成感兴趣的一个或多个特征的三维模型。 提出了一种用于形成改进的基准并确定纳米尺度三维结构中暴露特征的深度的方法。

    Low energy ion milling or deposition
    182.
    发明授权
    Low energy ion milling or deposition 有权
    低能离子研磨或沉积

    公开(公告)号：US09206504B2

    公开(公告)日：2015-12-08

    申请号：US14243583

    申请日：2014-04-02

    Applicant: FEI Company

    Inventor： Johannes Jacobus Lambertus Mulders ,  Remco Theodorus Johannes Petrus Geurts ,  Petrus Hubertus Franciscus Trompenaars ,  Eric Gerardus Theodoor Bosch

    IPC: C23C14/28 ,  H05B6/00 ,  C23C14/48 ,  H01J37/305 ,  H01J37/317 ,  H01J37/02 ,  G01N1/28 ,  G01N1/32

    CPC classification number: C23C14/48 ,  G01N1/286 ,  G01N1/32 ,  H01J37/02 ,  H01J37/3053 ,  H01J37/3171 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/006 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01J2237/31742 ,  H01J2237/31745 ,  H01J2237/31749

    Abstract: Samples to be imaged in a Transmission Electron Microscope must be thinned to form a lamella with a thickness of, for example, 20 nm. This is commonly done by sputtering with ions in a charged particle apparatus equipped with a Scanning Electron Microscope (SEM) column, a Focused Ion Beam (FIB) column, and one or more Gas Injection Systems (GISses). A problem that occurs is that a large part of the lamella becomes amorphous due to bombardment by ions, and that ions get implanted in the sample. The invention provides a solution by applying a voltage difference between the capillary of the GIS and the sample, and directing a beam of ions or electrons to the jet of gas. The beam ionizes gas that is accelerated to the sample, where (when using a low voltage between sample and GIS) low energy milling occurs, and thus little sample thickness becomes amorphous.

    Abstract translation: 在透射电子显微镜中成像的样品必须变薄以形成厚度为例如20nm的薄片。 这通常通过在装备有扫描电子显微镜（SEM）柱，聚焦离子束（FIB）柱和一个或多个气体注入系统（GISs））的带电粒子装置中用离子溅射来完成。 发生的一个问题是，由于离子的轰击，大部分薄片变成无定形，并且离子被植入样品中。 本发明通过在GIS的毛细管和样品之间施加电压差并且将一束离子或电子引导到气体射流来提供解决方案。 光束电离加速到样品的气体，其中（当在样品和GIS之间使用低电压时）发生低能量铣削，因此样品厚度变得非晶态。

    TEM sample preparation
    183.
    发明授权
    TEM sample preparation 有权
    TEM样品制备

    公开(公告)号：US09177760B2

    公开(公告)日：2015-11-03

    申请号：US14502522

    申请日：2014-09-30

    Applicant: FEI Company

    Inventor： Jeffrey Blackwood ,  Matthew Bray ,  Corey Senowitz ,  Cliff Bugge

    IPC: H01J37/00 ,  H01J37/305 ,  G01N1/28 ,  H01J37/26

    CPC classification number: H01J37/3056 ,  G01N1/286 ,  G01N2001/2886 ,  H01J37/261 ,  H01J2237/31745

    Abstract: An improved method of preparing ultra-thin TEM samples that combines backside thinning with an additional cleaning step to remove surface defects on the FIB-facing substrate surface. This additional step results in the creation of a cleaned, uniform “hardmask” that controls the ultimate results of the sample thinning, and allows for reliable and robust preparation of samples having thicknesses down to the 10 nm range.

    Abstract translation: 一种改进的制备超薄TEM样品的方法，其结合了背面变薄与额外的清洁步骤，以去除面向FIB的衬底表面上的表面缺陷。 这个额外的步骤导致创建一个清洁，统一的“硬掩模”来控制样品稀化的最终结果，并且允许对厚度低至10nm范围的样品进行可靠和鲁棒的准备。

    Sample carrier for an electron microscope
    184.
    发明授权
    Sample carrier for an electron microscope 有权
    电子显微镜样品载体

    公开(公告)号：US09159531B2

    公开(公告)日：2015-10-13

    申请号：US14154753

    申请日：2014-01-14

    Applicant: FEI Company

    Inventor： Frank Nederlof

    IPC: H01J37/20 ,  G01N23/22 ,  G01N23/225

    CPC classification number: H01J37/20 ,  G01N23/2204 ,  G01N23/2251 ,  H01J2237/201 ,  H01J2237/26

    Abstract: The invention relates to a sample carrier for a transmission electron microscope. When using state of the art sample carriers, such as half-moon grids in combination with detectors detecting, for example, X-rays emitted at a large emittance angle, shadowing is a problem. Similar problems occur when performing tomography, in which the sample is rotated over a large angle.The invention provides a solution to shadowing by forming the parts of the grid bordering the interface between sample and grid as tapering parts.

    Abstract translation: 本发明涉及透射电子显微镜的样品载体。 当使用现有技术的采样载体（例如半月板）与检测器（例如，以大的发射角发射的X射线）组合时，阴影是一个问题。 执行断层扫描时会出现类似的问题，其中样品在大角度旋转。 本发明通过形成与样品和格栅之间的界面接近的网格部分作为渐缩部分来提供阴影的解决方案。

    Method of using a phase plate in a transmission electron microscope
    187.
    发明授权
    Method of using a phase plate in a transmission electron microscope 有权
    在透射电子显微镜中使用相位板的方法

    公开(公告)号：US09129774B2

    公开(公告)日：2015-09-08

    申请号：US14262340

    申请日：2014-04-25

    Applicant: FEI Company ,  Max-Planck-Gesellschaft zur Foerderung der Wissenschaften e. V.

    Inventor： Bart Buijsse ,  Radostin Stoyanov Danev

    IPC: H01J37/26 ,  G21K5/04 ,  H01J37/285

    CPC classification number: H01J37/263 ,  H01J37/285 ,  H01J2237/2614

    Abstract: The invention relates to a method of using a phase plate, having a thin film, in a transmission electron microscope (TEM), comprising: introducing the phase plate in the TEM; preparing the phase plate by irradiating the film with a focused electron beam; introducing a sample in the TEM; and forming an image of the sample using the prepared phase plate, wherein preparing the phase plate involves locally building up a vacuum potential resulting from a change in the electronic structure of the thin film by irradiating the phase plate with a focused beam of electrons, the vacuum potential leading to an absolute phase shift |φ| with a smaller value than at the non-irradiated thin film. Preferably the phase plate is heated to avoid contamination. The phase shift achieved with this phase plate can be tuned by varying the diameter of the irradiated spot.

    Abstract translation: 本发明涉及一种在透射电子显微镜（TEM）中使用具有薄膜的相位板的方法，包括：在TEM中引入相位板; 通过用聚焦电子束照射膜来制备相位板; 在TEM中引入样品; 以及使用所制备的相位板形成样品的图像，其中准备所述相位板包括通过用聚焦的电子束照射所述相位板来在所述薄膜的电子结构的变化中局部地形成真空电位， 真空电位导致绝对相移|＆phgr | | 其值比未经照射的薄膜的值小。 优选地，相板被加热以避免污染。 可以通过改变照射斑点的直径来调节用该相位板实现的相移。

    High Aspect Ratio Structure Analysis
    188.
    发明申请
    High Aspect Ratio Structure Analysis 审中-公开
    高宽比结构分析

    公开(公告)号：US20150243478A1

    公开(公告)日：2015-08-27

    申请号：US14433354

    申请日：2013-10-04

    Applicant: FEI COMPANY

    Inventor： Sang Hoon Lee ,  Stacey Stone ,  Jeffrey Blackwood ,  Michael Schmidt

    IPC: H01J37/305 ,  C23C14/46

    CPC classification number: H01J37/3053 ,  C23C14/46 ,  G01N1/32 ,  H01J37/28 ,  H01J37/3056 ,  H01J37/3178 ,  H01J2237/3174 ,  H01J2237/31745 ,  H01J2237/31749

    Abstract: Curtaining artifacts on high aspect ratio features are reduced by reducing the distance between a protective layer and feature of interest. For example, the ion beam can mill at an angle to the work piece surface to create a sloped surface. A protective layer is deposited onto the sloped surface, and the ion beam mills through the protective layer to expose the feature of interest for analysis. The sloped mill positions the protective layer close to the feature of interest to reduce curtaining.

    Abstract translation: 通过减小保护层和感兴趣的特征之间的距离来减少高纵横比特征上的赝像。 例如，离子束可以与工件表面成一定角度磨，以产生倾斜的表面。 保护层沉积在倾斜表面上，并且离子束通过保护层研磨以暴露感兴趣的特征以进行分析。 倾斜的磨机使保护层位于感兴趣的特征附近以减少绘制。

    Precursor for planar deprocessing of semiconductor devices using a focused ion beam
    190.
    发明授权
    Precursor for planar deprocessing of semiconductor devices using a focused ion beam 有权
    使用聚焦离子束的半导体器件的平面去加工的前体

    公开(公告)号：US09064811B2

    公开(公告)日：2015-06-23

    申请号：US13910761

    申请日：2013-06-05

    Applicant: FEI Company

    Inventor： Chad Rue ,  Clive D. Chandler

    IPC: B44C1/22 ,  H01L21/461 ,  H01L21/302 ,  C23C14/32 ,  H01L21/3065 ,  H01J37/305 ,  H01L21/3213 ,  H01L21/67

    CPC classification number: H01L21/67069 ,  H01J37/3056 ,  H01J37/3233 ,  H01J37/3244 ,  H01J2237/3151 ,  H01J2237/31744 ,  H01J2237/31749 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/32131 ,  H01L21/32136 ,  H01L21/76892

    Abstract: A method and system for improved planar deprocessing of semiconductor devices using a focused ion beam system. The method comprises defining a target area to be removed, the target area including at least a portion of a mixed copper and dielectric layer of a semiconductor device; directing a precursor gas toward the target area; and directing a focused ion beam toward the target area in the presence of the precursor gas, thereby removing at least a portion of a first mixed copper and dielectric layer and producing a uniformly smooth floor in the milled target area. The precursor gas causes the focused ion beam to mill the copper at substantially the same rate as the dielectric. In a preferred embodiment, the precursor gas comprises methyl nitroacetate. In alternative embodiments, the precursor gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride.

    Abstract translation: 一种用于使用聚焦离子束系统改进半导体器件的平面去除处理的方法和系统。 该方法包括限定要去除的目标区域，所述目标区域包括半导体器件的混合铜和电介质层的至少一部分; 将前体气体引向目标区域; 并且在存在前体气体的情况下将聚焦离子束引向目标区域，从而去除第一混合铜和电介质层的至少一部分，并在研磨的目标区域中产生均匀光滑的地板。 前体气体导致聚焦离子束以与电介质基本相同的速率研磨铜。 在优选的实施方案中，前体气体包括硝基乙酸甲酯。 在替代实施方案中，前体气体是乙酸甲酯，乙酸乙酯，硝基乙酸乙酯，乙酸丙酯，硝基乙酸丙酯，硝基乙酸乙酯，甲氧基乙酸甲酯或甲氧基乙酰氯。

Patent Agency Ranking