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    FACE-ON, GAS-ASSISTED ETCHING FOR PLAN-VIEW LAMELLAE PREPARATION
    1.
    发明申请
    FACE-ON, GAS-ASSISTED ETCHING FOR PLAN-VIEW LAMELLAE PREPARATION 审中-公开

    公开(公告)号：US20180350558A1

    公开(公告)日：2018-12-06

    申请号：US15987847

    申请日：2018-05-23

    Applicant: FEI Company

    Inventor： Noel Thomas Franco ,  Kenny Mani ,  Chad Rue ,  Joe Christian ,  Jeffrey Blackwood

    IPC: H01J37/305 ,  H01L21/67 ,  H01L21/263 ,  H01L21/3065 ,  H01J37/22 ,  G01N1/44 ,  G01N1/28

    Abstract: Method for preparing site-specific, plan-view lamellae from multilayered microelectronic devices. A focused ion beam that is directed, with an etch-assisting gas, toward an uppermost layer of a device removes at least that uppermost layer and thereby exposes an underlying layer over, or comprising, a target area from which the site-specific, plan-view lamella is to be prepared, wherein the focused ion beam is in a face-on orientation in removing the uppermost layer to expose the underlying layer. In a preferred embodiment, the etch-assisting gas comprises methyl nitroacetate. In alternative embodiments, the etch-assisting gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride.

    Method for preparing samples for imaging
    4.
    发明授权
    Method for preparing samples for imaging 有权
    准备成像样品的方法

    公开(公告)号：US08822921B2

    公开(公告)日：2014-09-02

    申请号：US14144902

    申请日：2013-12-31

    Applicant: FEI Company

    Inventor： Michael Schmidt ,  Jeffrey Blackwood ,  Stacey Stone ,  Sang Hoon Lee ,  Ronald Kelley

    IPC: G01N23/00 ,  G01N1/32

    CPC classification number: G01N1/32 ,  G01N1/286 ,  G01N2001/2886 ,  H01J37/3056 ,  H01J2237/31745

    Abstract: A method and apparatus is provided for preparing samples for observation in a charged particle beam system in a manner that reduces or prevents artifacts. Material is deposited onto the sample using charged particle beam deposition just before or during the final milling, which results in an artifact-free surface. Embodiments are useful for preparing cross sections for SEM observation of samples having layers of materials of different hardnesses. Embodiments are useful for preparation of thin TEM samples.

    Abstract translation: 提供了一种方法和装置，用于以减少或防止伪影的方式制备用于在带电粒子束系统中观察的样品。 在最终研磨之前或期间，使用带电粒子束沉积将材料沉积到样品上，这导致无伪影的表面。 实施例对于制备具有不同硬度的材料层的样品的SEM观察的截面是有用的。 实施例可用于制备薄TEM样品。

    Depositing material into high aspect ratio structures
    6.
    发明授权
    Depositing material into high aspect ratio structures 有权
    将材料沉积成高纵横比结构

    公开(公告)号：US09384982B2

    公开(公告)日：2016-07-05

    申请号：US14758043

    申请日：2013-12-30

    Applicant: FEI Company

    Inventor： Sang Hoon Lee ,  Jeffrey Blackwood ,  Stacey Stone

    IPC: H01L21/76 ,  H01L21/31 ,  H01L21/469 ,  H01L21/26 ,  H01L21/02 ,  H01L21/285 ,  C23C16/04 ,  H01L21/768

    CPC classification number: H01L21/2605 ,  C23C16/045 ,  C23C16/047 ,  H01L21/02115 ,  H01L21/02277 ,  H01L21/0243 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/28556 ,  H01L21/76879 ,  H01L21/76898

    Abstract: A method is provided, along with a corresponding apparatus, for filling a high aspect ratio hole without voids or for producing high aspect ratio structures without voids. A beam having a diameter smaller than the diameter of the hole is directed into the hole to induced deposition beginning in the center region of the hole bottom. After an elongated structure is formed in the hole by the beam-induced deposition, a beam can then be scanned in a pattern at least as large as the hole diameter to fill the remainder of the hole. The high aspect ratio hole can then be cross-sectioned using an ion beam for observation without creating artefacts. When electron-beam-induced deposition is used, the electrons preferably have a high energy to reach the bottom of the hole, and the beam has a low current, to reduce spurious deposition by beam tails.

    Abstract translation: 提供了一种方法，连同相应的装置，用于填充没有空隙的高纵横比孔或用于产生没有空隙的高纵横比结构。 直径小于孔直径的梁被引导到孔中以在孔底的中心区域开始诱导沉积。 在通过光束沉积在孔中形成细长结构之后，可以以至少与孔直径一样大的图案扫描光束，以填充孔的其余部分。 然后可以使用离子束对高纵横比孔进行横截面观察而不产生伪影。 当使用电子束感应沉积时，电子优选具有高能量以到达孔的底部，并且光束具有低电流，以减少光束尾部的杂散沉积。

    Multidimensional Structural Access
    9.
    发明申请
    Multidimensional Structural Access 审中-公开
    多维结构访问

    公开(公告)号：US20150260784A1

    公开(公告)日：2015-09-17

    申请号：US14432712

    申请日：2013-10-04

    Applicant: FEI COMPANY

    Inventor： Jeffrey Blackwood ,  Sang Hoon Lee ,  Michael Schmidt ,  Stacey Stone ,  Karey Holland

    IPC: G01R31/265 ,  H01J37/153

    CPC classification number: G01R31/2653 ,  G01N1/286 ,  G01N1/32 ,  G01R31/2808 ,  G01R31/2898 ,  G01R31/307 ,  G01R31/312 ,  H01J37/153 ,  H01J37/3005 ,  H01J2237/208 ,  H01J2237/24564 ,  H01J2237/2817 ,  H01J2237/31749 ,  H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Multiple planes within the sample are exposed from a single perspective for contact by an electrical probe. The sample can be milled at a non-orthogonal angle to expose different layers as sloped surfaces. The sloped edges of multiple, parallel conductor planes provide access to the multiple levels from above. The planes can be accessed, for example, for contacting with an electrical probe for applying or sensing a voltage. The level of an exposed layer to be contacted can be identified, for example, by counting down the exposed layers from the sample surface, since the non-orthogonal mill makes all layers visible from above. Alternatively, the sample can be milled orthogonally to the surface, and then tilted and/or rotated to provide access to multiple levels of the device. The milling is preferably performed away from the region of interest, to provide electrical access to the region while minimizing damage to the region.

    Abstract translation: 样品中的多个平面从单个角度暴露出来，用于通过电探针进行接触。 样品可以以非正交角度研磨，以将不同的层暴露于倾斜的表面。 多个平行导体平面的倾斜边缘可从上方进入多个层次。 例如，可以访问平面，以便与用于施加或感测电压的电探针接触。 可以例如通过从样品表面倒下暴露的层来鉴定待接触的暴露层的水平，因为非正交磨机使得所有层从上方可见。 或者，样品可以与表面正交地研磨，然后倾斜和/或旋转以提供对该装置的多个级别的访问。 铣削优选地远离感兴趣的区域进行，以提供对该区域的电通路，同时使对该区域的损害最小化。

    METHOD FOR PREPARING THIN SAMPLES FOR TEM IMAGING
    10.
    发明申请
    METHOD FOR PREPARING THIN SAMPLES FOR TEM IMAGING 审中-公开
    用于制备TEM成像的稀薄样品的方法

    公开(公告)号：US20150102009A1

    公开(公告)日：2015-04-16

    申请号：US14514199

    申请日：2014-10-14

    Applicant: FEI Company

    Inventor： Michael Moriarty ,  Stacey Stone ,  Jeffrey Blackwood

    IPC: G01N1/32 ,  H01J37/02

    CPC classification number: G01N1/32 ,  G01N1/286 ,  G01N2001/2886 ,  H01J37/02 ,  H01J37/3056 ,  H01J2237/20 ,  H01J2237/2802 ,  H01J2237/31745 ,  H01L21/02318

    Abstract: A method and apparatus for preparing thin TEM samples in a manner that reduces or prevents bending and curtaining is realized. Embodiments of the present invention deposit material onto the face of a TEM sample during the process of preparing the sample. In some embodiments, the material can be deposited on a sample face that has already been thinned before the opposite face is thinned, which can serve to reinforce the structural integrity of the sample and refill areas that have been over-thinned due to a curtaining phenomena. In other embodiments, material can also be deposited onto the face being milled, which can serve to reduce or eliminate curtaining on the sample face.

    Abstract translation: 实现了以减少或防止弯曲和卷曲的方式制备薄TEM样品的方法和装置。 在制备样品的过程中，本发明的实施方案将材料沉积在TEM样品的表面上。 在一些实施例中，材料可以沉积在样品面上，该样品表面在相对面变薄之前已经变薄，这可以用于增强样品的结构完整性并且由于存在现象而已经被过度稀释的区域 。 在其他实施例中，材料也可以沉积到被研磨的面上，这可以用于减少或消除样品面上的绘制。

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