Invention Grant
- Patent Title: Depositing material into high aspect ratio structures
- Patent Title (中): 将材料沉积成高纵横比结构
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Application No.: US14758043Application Date: 2013-12-30
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Publication No.: US09384982B2Publication Date: 2016-07-05
- Inventor: Sang Hoon Lee , Jeffrey Blackwood , Stacey Stone
- Applicant: FEI Company
- Applicant Address: US OR Hillsboro
- Assignee: FEI Company
- Current Assignee: FEI Company
- Current Assignee Address: US OR Hillsboro
- Agency: Scheinberg & Associates, P.C.
- Agent John B. Kelly
- International Application: PCT/US2013/078354 WO 20131230
- International Announcement: WO2014/106202 WO 20140703
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/31 ; H01L21/469 ; H01L21/26 ; H01L21/02 ; H01L21/285 ; C23C16/04 ; H01L21/768
Abstract:
A method is provided, along with a corresponding apparatus, for filling a high aspect ratio hole without voids or for producing high aspect ratio structures without voids. A beam having a diameter smaller than the diameter of the hole is directed into the hole to induced deposition beginning in the center region of the hole bottom. After an elongated structure is formed in the hole by the beam-induced deposition, a beam can then be scanned in a pattern at least as large as the hole diameter to fill the remainder of the hole. The high aspect ratio hole can then be cross-sectioned using an ion beam for observation without creating artefacts. When electron-beam-induced deposition is used, the electrons preferably have a high energy to reach the bottom of the hole, and the beam has a low current, to reduce spurious deposition by beam tails.
Public/Granted literature
- US20150340235A1 DEPOSITING MATERIAL INTO HIGH ASPECT RATIO STRUCTURES Public/Granted day:2015-11-26
Information query
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