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    Exchange coupling film and magnetoresistive element using the same
    124.
    发明授权
    Exchange coupling film and magnetoresistive element using the same 有权
    交换耦合膜和使用其的磁阻元件

    公开(公告)号：US07218487B2

    公开(公告)日：2007-05-15

    申请号：US11410217

    申请日：2006-04-24

    Applicant: Naoya Hasegawa ,  Masamichi Saito

    Inventor： Naoya Hasegawa ,  Masamichi Saito

    IPC: G11B5/66

    CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/123 ,  H01F10/3218 ,  H01F10/3268 ,  H01F41/325 ,  Y10T428/11 ,  Y10T428/1107 ,  Y10T428/1143 ,  Y10T428/12465 ,  Y10T428/12826 ,  Y10T428/12854 ,  Y10T428/265 ,  Y10T428/32

    Abstract: An exchange coupling film including an antiferromagnetic layer and a ferromagnetic layer in contact with the antiferromagnetic layer so as to generate an exchange coupling magnetic field is provided. A PtMn alloy is used as the material of the antiferromagnetic layer. Crystal planes of the antiferromagnetic layer and the ferromagnetic layer preferentially aligned parallel to the interface are crystallographically identical and crystallographically identical axes lying in these crystal planes are oriented, at least partly, in different directions between the antiferromagnetic layer and the ferromagnetic layer. Thus, a proper order transformation occurs in the antiferromagnetic layer as a result of heat treatment and an increased exchange coupling magnetic field can be obtained.

    Abstract translation: 提供了包括与反铁磁层接触的反铁磁层和铁磁层以产生交换耦合磁场的交换耦合膜。 使用PtMn合金作为反铁磁层的材料。 反铁磁性层和铁磁性层平行于界面优先取向的晶面是晶体学上相同的，位于这些晶面的晶体学相同的轴至少部分地在反铁磁层和铁磁层之间的不同方向上取向。 因此，作为热处理的结果，在反铁磁性层中发生适当的顺序变换，并且可以获得增加的交换耦合磁场。

    Magnetic spin valve with a magnetoelectric element
    125.
    发明申请
    Magnetic spin valve with a magnetoelectric element 有权
    具有磁电元件的磁性自旋阀

    公开(公告)号：US20070014143A1

    公开(公告)日：2007-01-18

    申请号：US11444675

    申请日：2006-06-01

    Applicant: Bernard Doudin

    Inventor： Bernard Doudin

    IPC: G11C11/22

    CPC classification number: G11C11/16 ,  H01F10/3218 ,  H01F10/3254 ,  H01F10/3286 ,  H01L43/08

    Abstract: The present invention provides systems and method utilizing magnetoelectric materials such as Cr2O3 to construct tunneling magnetoresistence and/or giant magnetoresistence structures for memory and/or logical circuitry. An applied voltage differential induces a magnetic moment in the magnetoelectric material, which in turn tunes an exchange field between it and one or more adjacent ferromagnetic layers. The resulting magnetoresistence of the device may be measured. Devices in accordance with the present invention may be utilized for MRAM read heads, memory storage cells and/or logical circuitry such as XOR or NXOR devices.

    Abstract translation: 本发明提供利用磁电材料例如Cr 2 O 3 3的系统和方法来构建用于存储器和/或逻辑电路的隧道磁阻和/或巨磁阻结构。 施加的电压差引起磁电材料中的磁矩，其进而调节其与一个或多个相邻铁磁层之间的交换场。 可以测量所得到的器件的磁阻。 根据本发明的装置可以用于MRAM读取头，存储器存储单元和/或诸如XOR或NXOR器件的逻辑电路。

    Spin scattering and heat assisted switching of a magnetic element
    127.
    发明授权
    Spin scattering and heat assisted switching of a magnetic element 有权
    磁性元件的旋转散射和热辅助切换

    公开(公告)号：US07126202B2

    公开(公告)日：2006-10-24

    申请号：US10990561

    申请日：2004-11-16

    Applicant: Yiming Huai ,  Mahendra Pakala

    Inventor： Yiming Huai ,  Mahendra Pakala

    IPC: H01L29/82

    CPC classification number: G11C11/16 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3218 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/302 ,  H01F41/303 ,  H01L43/08

    Abstract: A method and system for providing a magnetic element is disclosed. The magnetic element include providing a pinned layer, a spacer layer, and a free layer. The method and system also include providing a heat assisted switching layer and a spin scattering layer between the free layer and the heat assisted switching layer. The spin scattering layer is configured to more strongly scatter majority electrons than minority electrons. The heat assisted switching layer is for improving a thermal stability of the free layer when the free layer is not being switched. Moreover, the magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.

    Abstract translation: 公开了一种用于提供磁性元件的方法和系统。 磁性元件包括提供钉扎层，间隔层和自由层。 该方法和系统还包括在自由层和热辅助切换层之间提供热辅助切换层和自旋散射层。 自旋散射层配置成比少数电子更强烈地散射多数电子。 热辅助切换层用于在自由层不被切换时改善自由层的热稳定性。 此外，磁性元件被配置为当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。

    Magnetic field enhanced photovoltaic device
    128.
    发明授权
    Magnetic field enhanced photovoltaic device 有权
    磁场增强型光伏器件

    公开(公告)号：US07109409B2

    公开(公告)日：2006-09-19

    申请号：US11022794

    申请日：2004-12-28

    Applicant: Chia-Fan Chu

    Inventor： Chia-Fan Chu

    IPC: H01L31/04 ,  H01L31/0216

    CPC classification number: H01L31/06 ,  B82Y25/00 ,  H01F10/3218 ,  H01L31/0352 ,  H01L51/4213 ,  H01L51/4266 ,  Y02E10/549

    Abstract: A magnetic field enhanced photovoltaic device includes a photoelectric conversion layer, a first electrode, a second electrode, a ferro-antiferromagnetic exchange coupling layer and an applied magnetic field. The first electrode and the second electrode are respectively disposed on two surfaces of the photoelectric conversion layer to collect electrons and holes generated by the photoelectric conversion layer. The first electrode is pervious to light. The incident light reaches the photoelectric conversion layer through the first electrode. The applied magnetic field polarizes the spin state of electrons. The ferro-antiferromagnetic exchange coupling layer adjoins the photoelectric conversion layer and pins the spin state of electrons.

    Abstract translation: 磁场增强型光电器件包括光电转换层，第一电极，第二电极，铁 - 铁磁性交换耦合层和施加的磁场。 第一电极和第二电极分别设置在光电转换层的两个表面上，以收集由光电转换层产生的电子和空穴。 第一个电极是透光的。 入射光通过第一电极到达光电转换层。 施加的磁场使电子的自旋状态偏振。 铁 - 反铁磁性交换耦合层毗邻光电转换层并引导电子的自旋状态。

    Exchange coupling film and magnetoresistive element using the same
    129.
    发明申请
    Exchange coupling film and magnetoresistive element using the same 有权
    交换耦合膜和使用其的磁阻元件

    公开(公告)号：US20060098357A1

    公开(公告)日：2006-05-11

    申请号：US11303361

    申请日：2005-12-16

    Applicant: Naoya Hasegawa ,  Masamichi Saito

    Inventor： Naoya Hasegawa ,  Masamichi Saito

    IPC: G11B5/33

    CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3906 ,  G11B2005/3996 ,  H01F10/123 ,  H01F10/3218 ,  H01F10/3268 ,  H01F41/325 ,  Y10T428/1107 ,  Y10T428/1143 ,  Y10T428/32

    Abstract: A PtMn alloy film known as an antiferromagnetic material having excellent corrosion resistance is used for an antiferromagnetic layer. However, an exchange coupling magnetic field is decreased depending upon the conditions of crystal grain boundaries. Therefore, in the present invention, the crystal grain boundaries formed in an antiferromagnetic layer (PtMn alloy film) and the crystal grain,boundaries formed in a ferromagnetic layer are made discontinuous in at least a portion of the interface between both layers. As a result, the antiferromagnetic layer can be appropriately transformed to an ordered lattice by heat treatment to obtain a larger exchange coupling magnetic field than a conventional element.

    Abstract translation: 用作反铁磁层的具有优异耐腐蚀性的称为反铁磁材料的PtMn合金膜。 然而，根据晶粒边界的条件，交换耦合磁场减小。 因此，在本发明中，形成在反铁磁层（PtMn合金膜）中的晶粒边界和晶粒，形成在铁磁层中的边界在两层之间的界面的至少一部分中变得不连续。 结果，通过热处理可以将反铁磁层适当地转换为有序晶格，以获得比常规元件更大的交换耦合磁场。

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