Invention Grant
US06946302B2 Synthetic-ferrimagnet sense-layer for high density MRAM applications
有权
用于高密度MRAM应用的合成铁磁感应层
- Patent Title: Synthetic-ferrimagnet sense-layer for high density MRAM applications
- Patent Title (中): 用于高密度MRAM应用的合成铁磁感应层
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Application No.: US10762478Application Date: 2004-01-23
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Publication No.: US06946302B2Publication Date: 2005-09-20
- Inventor: James G. Deak
- Applicant: James G. Deak
- Applicant Address: US ID Boise
- Assignee: Micron Technology Inc.
- Current Assignee: Micron Technology Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro Morin & Oshinsky LLP
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01F10/32 ; H01L21/8246 ; H01L27/105 ; H01L43/08 ; H01L43/10 ; H01L43/12 ; H01L21/00
Abstract:
An improved magnetic memory element is provided in which a magnetic sense layer is formed of two ferromagnetic material layers separated by a spacer layer. The two ferromagnetic layers are formed as a synthetic ferrimagnet with stray field coupling and antiferromagnetic exchange coupling across the spacer layer.
Public/Granted literature
- US20040152218A1 Synthetic-ferrimagnet sense-layer for high density MRAM applications Public/Granted day:2004-08-05
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