公开(公告)号：US07868404B2

公开(公告)日：2011-01-11

申请号：US12229576

申请日：2008-08-25

Applicant: James G. Deak

Inventor： James G. Deak

IPC: H01L29/82

CPC classification number: H01F10/3254 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/325 ,  H01L43/08 ,  Y10T428/21 ,  Y10T428/249921 ,  Y10T428/26

Abstract: A ferromagnetic thin-film based device that transitioned between alternative magnetic states thereof through having electrical currents established therethrough and has both a reference magnetization and a free layer magnetization provided therein by vortex magnetizations.

Abstract translation: 一种基于铁磁薄膜的器件，其通过具有通过其形成的电流而在其替代磁状态之间转变，并且具有通过涡旋磁化提供的基准磁化和自由层磁化。

公开(公告)号：US07381573B2

公开(公告)日：2008-06-03

申请号：US11025913

申请日：2005-01-03

Applicant: James G. Deak

Inventor： James G. Deak

IPC: H01L21/00

CPC classification number: G11C11/16 ,  H01L27/222 ,  H01L43/08 ,  H01L43/12 ,  Y10T29/49021 ,  Y10T29/49044

Abstract: The present invention seeks to reduce the amount of current required for a write operation by using a process for forming the read conductor within a recessed write conductor, the write conductor itself formed within a trench of an insulating layer. The present invention protects the MTJ from the voltages created by the write conductor by isolating the write conductor and enabling the reduction of current necessary to write a bit of information.

公开(公告)号：US07274591B2

公开(公告)日：2007-09-25

申请号：US10926237

申请日：2004-08-26

Applicant: James G. Deak

Inventor： James G. Deak

IPC: G11C11/00

CPC classification number: G11C11/16

Abstract: A magnetic random access memory (MRAM) is compensated for write current shunting by varying the bit size of each MRAM cell with position along the write line. The MRAM includes a plurality of magnetic tunnel junction memory cells arranged in an array of columns and rows. The width of each memory cell increases along a write line to compensate for write current shunting.

Abstract translation: 磁性随机存取存储器（MRAM）通过沿着写入线的位置改变每个MRAM单元的位大小来补偿写入电流分流。 MRAM包括以列和行阵列排列的多个磁性隧道结存储单元。 每个存储单元的宽度沿写入线增加以补偿写入电流分流。

公开(公告)号：US07160738B2

公开(公告)日：2007-01-09

申请号：US11415601

申请日：2006-05-01

Applicant: James G. Deak

Inventor： James G. Deak

IPC: H01L21/8239

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  H01F10/3272 ,  H01F41/304 ,  H01L43/12

Abstract: A method is provided for fabricating a fixed layer for a MRAM device. The method includes providing the fixed layer. The fixed layer includes an antiferromagnetic pinning layer over a substrate and a ferromagnetic pinned layer over the pinning layer, the pinned layer having a first thickness. The fixed layer further includes a spacer layer over the pinned layer, and a ferromagnetic reference layer over the spacer layer, the reference layer having a second thickness. The method further includes annealing the fixed layer using a temporal temperature/magnetic field profile, the profile having a maximum magnetic field magnitude (Hanneal). The profile is selected based on the first thickness of the pinned layer and the second thickness of the reference layer.

Abstract translation: 提供了一种制造用于MRAM器件的固定层的方法。 该方法包括提供固定层。 固定层包括衬底上的反铁磁钉扎层和钉扎层上的铁磁性钉扎层，钉扎层具有第一厚度。 固定层还包括被钉扎层上的间隔层，以及间隔层上方的铁磁参考层，参考层具有第二厚度。 该方法还包括使用时间温度/磁场分布对固定层进行退火，该轮廓具有最大磁场强度（H H 3退火）。 基于被钉扎层的第一厚度和参考层的第二厚度来选择轮廓。

公开(公告)号：US06946302B2

公开(公告)日：2005-09-20

申请号：US10762478

申请日：2004-01-23

Applicant: James G. Deak

Inventor： James G. Deak

IPC: G11C11/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L21/00

CPC classification number: B82Y25/00 ,  G11C11/161 ,  G11C11/1673 ,  H01F10/3218

Abstract: An improved magnetic memory element is provided in which a magnetic sense layer is formed of two ferromagnetic material layers separated by a spacer layer. The two ferromagnetic layers are formed as a synthetic ferrimagnet with stray field coupling and antiferromagnetic exchange coupling across the spacer layer.

Abstract translation: 提供了一种改进的磁存储元件，其中磁感应层由隔离层隔开的两个铁磁材料层形成。 两个铁磁层形成为具有跨越隔离层的杂散场耦合和反铁磁交换耦合的合成铁磁体。

公开(公告)号：US06816402B2

公开(公告)日：2004-11-09

申请号：US10175844

申请日：2002-06-21

Applicant: James G. Deak

Inventor： James G. Deak

IPC: G11C1100

CPC classification number: G11C11/16

Abstract: A write conductor layout structure for minimizing programming currents of an MRAM is disclosed. A magnetic memory cell has sense layer which is positioned between a first conductor having a width in a first direction and a second conductor having a width in a second direction. The width of the first and/or second conductor is narrower than a corresponding width of the sense layer. At least one of the first and second conductors is positioned so that the edge of the conductor extends beyond the edge of the sense layer.

公开(公告)号：US06728132B2

公开(公告)日：2004-04-27

申请号：US10114249

申请日：2002-04-03

Applicant: James G. Deak

Inventor： James G. Deak

IPC: G11C1115

CPC classification number: B82Y25/00 ,  G11C11/161 ,  G11C11/1673 ,  H01F10/3218

Abstract: An improved magnetic memory element is provided in which a magnetic sense layer is formed of two ferromagnetic material layers separated by a spacer layer. The two ferromagnetic layers are formed as a synthetic ferrimagnet with stray field coupling and antiferromagnetic exchange coupling across the spacer layer.

Abstract translation: 提供了一种改进的磁存储元件，其中磁感应层由隔离层隔开的两个铁磁材料层形成。 两个铁磁层形成为具有跨越隔离层的杂散场耦合和反铁磁交换耦合的合成铁磁体。

公开(公告)号：US06724652B2

公开(公告)日：2004-04-20

申请号：US10137500

申请日：2002-05-02

Applicant: James G. Deak

Inventor： James G. Deak

IPC: G11C1100

CPC classification number: H01L27/222 ,  G11C11/16

Abstract: Systems, devices and methods are provided for magnetic memory elements with low remanence flux concentrators. Improved bit yield is attributable to reduced remanence in the flux concentrator. Remanence provides the memory element with a biasing magnetic field. The flux concentrator includes anisotropy aligned with an appropriate conductor. One aspect of the present subject matter is a memory cell. One memory cell embodiment includes a magnetic memory element and a flux concentrator operably positioned with respect to a conductor. The conductor is adapted to provide a current-induced magnetic flux to the magnetic memory element. The flux concentrator includes an easy axis of magnetization aligned with the conductor and a hard axis of magnetization orthogonal to the easy axis of magnetization. Other aspects are provided herein.

Abstract translation: 提供了具有低剩磁通量集中器的磁存储器元件的系统，装置和方法。 提高的钻头产量可归因于通量集中器中的减少的剩磁。 剩余为存储元件提供偏置磁场。 通量集中器包括与适当导体对准的各向异性。 本主题的一个方面是存储单元。 一个存储单元实施例包括磁性存储元件和相对于导体可操作地定位的磁通集中器。 导体适于向磁存储元件提供电流感应磁通量。 磁通集中器包括与导体对准的易磁化轴和与易磁化轴正交的硬磁化轴。 本文提供了其他方面。

公开(公告)号：US06716644B2

公开(公告)日：2004-04-06

申请号：US10146890

申请日：2002-05-17

Applicant: Hasan Nejad ,  James G. Deak

Inventor： Hasan Nejad ,  James G. Deak

IPC: H10L2100

CPC classification number: H01L27/222 ,  H01L43/12

Abstract: The present invention provides a method of forming an MRAM cell which minimizes the occurrence of electrical shorts during fabrication. A first conductor in a trench is provided in an insulating layer and an upper surface of the insulating layer and the first conductor is planarized. Then, a dielectric layer is deposited to a thickness slightly greater than the desired final thickness of a sense layer, which is formed later. The dielectric layer is then patterned and etched to form an opening for the cell shapes over the first conductor. Then, a permalloy is electroplated in the cell shapes to form the sense layer. The sense layer and dielectric layer are flattened and then a nonmagnetic tunnel barrier layer is deposited. Finally, the pinned layer is formed over the tunnel barrier layer.

公开(公告)号：US09341686B2

公开(公告)日：2016-05-17

申请号：US13882133

申请日：2011-10-26

Applicant: James G. Deak ,  Insik Jin ,  Weifeng Shen ,  Songsheng Xue

Inventor： James G. Deak ,  Insik Jin ,  Weifeng Shen ,  Songsheng Xue

IPC: G01R33/09 ,  G01R21/00 ,  G01R21/06 ,  G01R22/10 ,  G01R15/20

CPC classification number: G01R33/098 ,  G01R15/205 ,  G01R21/00 ,  G01R21/06 ,  G01R22/10

Abstract: A single-package power meter is disclosed for measuring the power consumed by a load connected to an electrical conductor. The power meter is galvanically isolated from the electrical conductor through the use of magnetic sensors or through the combination of magnetic sensors and capacitors. Instantaneous power consumed at the load and other desired parameters are determined by measuring the voltage of the load and current flowing through the electrical conductor. Current is measured using a magnetic sensor to detect the magnetic field associated with the current flowing through the electrical conductor. Voltage is measured by one of two possible techniques involving magnetic sensors to measure the current flowing through a coil connected in parallel with a load, or through the use of a capacitively coupled voltage divider connected in parallel with the load. An application specific integrated circuit is further disclosed that controls the bias currents of the sensors for autoranging purposes and also for computing desired parameters, such as power consumption.

Abstract translation: 公开了一种用于测量连接到电导体的负载消耗的功率的单封装功率计。 功率计通过使用磁传感器或通过磁传感器和电容器的组合与电导体电隔离。 在负载和其他所需参数下消耗的瞬时功率通过测量负载和电流通过电导体的电流来确定。 使用磁传感器测量电流，以检测与流过电导体的电流相关的磁场。 电压通过涉及磁传感器的两种可能技术之一来测量，以测量流过与负载并联连接的线圈的电流，或通过使用与负载并联连接的电容耦合分压器。 还公开了一种专用集成电路，其控制用于自动量程目的的传感器的偏置电流并且还用于计算期望的参数，例如功率消耗。