Invention Grant
US07160738B2 Magnetic annealing sequences for patterned MRAM synthetic antiferromagnetic pinned layers
有权
用于图案化MRAM合成反铁磁固定层的磁退火序列
- Patent Title: Magnetic annealing sequences for patterned MRAM synthetic antiferromagnetic pinned layers
- Patent Title (中): 用于图案化MRAM合成反铁磁固定层的磁退火序列
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Application No.: US11415601Application Date: 2006-05-01
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Publication No.: US07160738B2Publication Date: 2007-01-09
- Inventor: James G. Deak
- Applicant: James G. Deak
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: H01L21/8239
- IPC: H01L21/8239
Abstract:
A method is provided for fabricating a fixed layer for a MRAM device. The method includes providing the fixed layer. The fixed layer includes an antiferromagnetic pinning layer over a substrate and a ferromagnetic pinned layer over the pinning layer, the pinned layer having a first thickness. The fixed layer further includes a spacer layer over the pinned layer, and a ferromagnetic reference layer over the spacer layer, the reference layer having a second thickness. The method further includes annealing the fixed layer using a temporal temperature/magnetic field profile, the profile having a maximum magnetic field magnitude (Hanneal). The profile is selected based on the first thickness of the pinned layer and the second thickness of the reference layer.
Public/Granted literature
- US20060192304A1 Magnetic annealing sequences for patterned MRAM synthetic antiferromagnetic pinned layers Public/Granted day:2006-08-31
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