Invention Application
- Patent Title: Exchange coupling film and magnetoresistive element using the same
- Patent Title (中): 交换耦合膜和使用其的磁阻元件
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Application No.: US11303361Application Date: 2005-12-16
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Publication No.: US20060098357A1Publication Date: 2006-05-11
- Inventor: Naoya Hasegawa , Masamichi Saito
- Applicant: Naoya Hasegawa , Masamichi Saito
- Priority: JP2000-209462 20000711; JP2000-366972 20001201
- Main IPC: G11B5/33
- IPC: G11B5/33

Abstract:
A PtMn alloy film known as an antiferromagnetic material having excellent corrosion resistance is used for an antiferromagnetic layer. However, an exchange coupling magnetic field is decreased depending upon the conditions of crystal grain boundaries. Therefore, in the present invention, the crystal grain boundaries formed in an antiferromagnetic layer (PtMn alloy film) and the crystal grain,boundaries formed in a ferromagnetic layer are made discontinuous in at least a portion of the interface between both layers. As a result, the antiferromagnetic layer can be appropriately transformed to an ordered lattice by heat treatment to obtain a larger exchange coupling magnetic field than a conventional element.
Public/Granted literature
- US07196879B2 Exchange coupling film and magnetoresistive element using the same Public/Granted day:2007-03-27
Information query
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