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    MULTI CHARGED PARTICLE BEAM WRITING APPARATUS
    111.
    发明公开
    MULTI CHARGED PARTICLE BEAM WRITING APPARATUS 审中-公开

    公开(公告)号：US20240242922A1

    公开(公告)日：2024-07-18

    申请号：US18493961

    申请日：2023-10-25

    Applicant: NuFlare Technology, Inc.

    Inventor： Hirofumi MORITA ,  Haruyuki NOMURA

    IPC: H01J37/153 ,  H01J37/04 ,  H01J37/09 ,  H01J37/145 ,  H01J37/317

    CPC classification number: H01J37/153 ,  H01J37/045 ,  H01J37/09 ,  H01J37/145 ,  H01J37/3174 ,  H01J2237/04735 ,  H01J2237/31754 ,  H01J2237/31774

    Abstract: In one embodiment, a multi charged particle beam writing apparatus includes two or more-stage objective lenses each comprised of a magnetic lens, and configured to focus the multi charged particle beam on a substrate, which has passed through the limiting aperture member, three or more correction lenses correcting an imaging state of the multi charged particle beam on the substrate, and an electric field control electrode to which a positive constant voltage with respect to the substrate is applied, the electric field control electrode generating an electric field between the substrate and the electric field control electrode. The two or more-stage objective lenses include a first objective lens, and a second objective lens placed most downstream in a travel direction of the multi charged particle beam. The three or more correction lenses are placed upstream of a lens magnetic field of the second objective lens in the travel direction of the multi charged particle beam.

    Beam grid layout
    112.
    再颁专利
    Beam grid layout 有权

    公开(公告)号：USRE49952E1

    公开(公告)日：2024-04-30

    申请号：US16838976

    申请日：2020-04-02

    Applicant: ASML Netherlands B.V.

    Inventor： Vincent Sylvester Kuiper ,  Erwin Slot

    IPC: H01J37/317 ,  H01J37/09 ,  H01J37/30

    CPC classification number: H01J37/3177 ,  H01J37/09 ,  H01J37/3007 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/3175 ,  H01J2237/31774

    Abstract: A sub-beam aperture array for forming a plurality of sub-beams from one or more charged particle beams. The sub-beam aperture array comprises one or more beam areas, each beam area comprising a plurality of sub-beam apertures arranged in a non-regular hexagonal pattern, the sub-beam apertures arranged so that, when projected in a first direction onto a line parallel to a second direction, the sub-beam apertures are uniformly spaced along the line, and wherein the first direction is different from the second direction. The system further comprises a beamlet aperture array with a plurality of beamlet apertures arranged in one or more groups. The beamlet aperture array is arranged to receive the sub-beams and form a plurality of beamlets at the locations of the beamlet apertures of the beamlet array.

    Aberration corrector and multiple electron beam irradiation apparatus
    119.
    发明授权
    Aberration corrector and multiple electron beam irradiation apparatus 有权

    公开(公告)号：US11574793B2

    公开(公告)日：2023-02-07

    申请号：US16879919

    申请日：2020-05-21

    Applicant: NuFlare Technology, Inc.

    Inventor： Kazuhiko Inoue ,  Munehiro Ogasawara

    IPC: H01J37/153 ,  H01J37/09 ,  H01J37/141

    Abstract: Aberration corrector includes a lower electrode substrate to be formed therein with plural first passage holes having a first hole diameter and making multiple electron beams pass therethrough, and to be arranged thereon plural electrode sets each being plural electrodes of four or more poles, surrounding a first passage hole, for each of the plural first passage holes, and an upper electrode substrate above the lower one, to be formed therein with plural second passage holes making multiple electron beams pass therethrough, whose size from the top of the upper electrode substrate to the middle of way to the back side of the upper electrode substrate is a second hole diameter, and whose size from the middle to the back side is a third hole diameter larger than each of the first and second hole diameters, wherein a shield electrode is on inner walls of plural second passage holes.

    Electron microscope and sample observation method using the same
    120.
    发明授权
    Electron microscope and sample observation method using the same 有权

    公开(公告)号：US11551907B2

    公开(公告)日：2023-01-10

    申请号：US17263017

    申请日：2019-07-26

    Applicant: RIKEN ,  UNIVERSITY PUBLIC CORPORATION OSAKA

    Inventor： Ken Harada ,  Keiko Shimada ,  Shigeo Mori ,  Atsuhiro Kotani

    IPC: H01J37/26 ,  G01N23/201 ,  H01J37/09 ,  H01J37/10 ,  H01J37/147 ,  H01J37/20 ,  H01J37/22

    Abstract: An observation apparatus and method that avoids drawbacks of a Lorentz method and observes a weak scatterer or a phase object with in-focus, high resolution, and no azimuth dependency, by a Foucault method observation using a hollow-cone illumination that orbits and illuminates an incident electron beam having a predetermined inclination angle, an electron wave is converged at a position (height) of an aperture plate downstream of a sample, and a bright field condition in which a direct transmitted electron wave of the sample passes through the aperture plate, a dark field condition in which the transmitted electron wave is shielded, and a Schlieren condition in which approximately half of the transmitted wave is shielded as a boundary condition of both of the above conditions are controlled, and a spatial resolution of the observation image is controlled by selecting multiple diameters and shapes of the opening of the aperture plate.

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