公开(公告)号：US20020068188A1

公开(公告)日：2002-06-06

申请号：US10037176

申请日：2001-11-08

申请人： Simon Fraser University

发明人： Ross H. Hill ,  You Mao Shi

IPC分类号： B32B015/00

CPC分类号： C23C18/06 ,  C11D7/3218 ,  C11D7/3281 ,  C11D7/34 ,  C23C18/08 ,  C23C18/1216 ,  C23C18/1245 ,  C23C18/1295 ,  C23C18/14 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02052 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76838 ,  H01L21/76894 ,  H05K3/105 ,  Y10S148/903 ,  Y10T428/12493 ,  Y10T428/12903

摘要： The invention is directed to a photoresist-free method for depositing films composed of metals, such as copper, or its oxides from metal complexes. More specifically, the method involves applying an amorphous film of a metal complex to a substrate. The metal complexes have the formula MfLgXh, wherein M is selected from the group consisting of Ti, V, Cr, Au, Mn, Fe, Co, Ni, Cu, Zn, Si, Sn, Li, Na, K, Ba, Sr, Mo, Ru, Pd, Pt, Re, Ir, and Os, L is a ligand of the formula (R2NCR2nullCO) wherein R and Rnull are independently selected from H, CnHm and CnHmAxBy wherein A and B are independently selected from main group elements and f, g, h, n, m, x and y represent integers and wherein X is an anion independently selected from N3, NCO, NO3, NO2, Cl, Br, I, CN, OH, H and CH3. These films, upon, for example, thermal, photochemical or electron beam irradiation may be converted to the metal or its oxides. By using either directed light or electron beams, this may lead to a patterned metal or metal oxide film in a single step.

公开(公告)号：US06383555B1

公开(公告)日：2002-05-07

申请号：US09615373

申请日：2000-07-13

申请人： Shinichiro Hayashi ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

发明人： Shinichiro Hayashi ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

IPC分类号： B05D512

CPC分类号： H01L21/31691 ,  B05D1/00 ,  B05D1/60 ,  B05D3/0493 ,  B05D3/062 ,  B05D3/065 ,  C23C8/10 ,  C23C16/4412 ,  C23C16/4486 ,  C23C16/45561 ,  C23C16/4558 ,  C23C16/46 ,  C23C16/482 ,  C23C16/52 ,  C23C18/12 ,  C23C18/1216 ,  C23C18/1287 ,  C23C18/1291 ,  C23C18/14 ,  C23C26/02 ,  C30B7/00 ,  C30B7/005 ,  C30B29/68 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/02348 ,  H01L27/11502 ,  H01L28/55 ,  H01L28/56 ,  H01L28/60 ,  H01L41/314 ,  H05K3/105 ,  Y10S427/101

摘要： A substrate is located within a deposition chamber, the substrate defining a substrate plane. A liquid precursor is misted by ultrasonic or venturi apparatus, to produce a colloidal mist. The mist is generated, allowed to settle in a buffer chamber, filtered through a system up to 0.01 micron, and flowed into the deposition chamber between the substrate and barrier plate to deposit a liquid layer on the substrate. The liquid is dried to form a thin film of solid material on the substrate, which is then incorporated into an electrical component of an integrated circuit.

摘要翻译： 衬底位于沉积室内，衬底限定衬底平面。 液体前体被超声波或文氏管装置迷雾，产生胶体雾。 产生雾，允许沉淀在缓冲室中，通过高达0.01微米的系统过滤，并流入基板和阻挡板之间的沉积室，以在基板上沉积液体层。 将液体干燥以在基板上形成固体材料的薄膜，然后将其并入集成电路的电气部件中。

公开(公告)号：US20010045362A1

公开(公告)日：2001-11-29

申请号：US09755645

申请日：2001-01-05

发明人： Tao Deng ,  Francisco Arias ,  Rustem F. Ismagilov ,  Paul J.A. Kenis ,  George M. Whitesides

IPC分类号： C25D005/02 ,  C23C028/02 ,  G03C005/26 ,  G03F007/26

CPC分类号： B81C1/00095 ,  B81B2207/07 ,  B81C99/008 ,  B81C99/0095 ,  B82Y30/00 ,  C23C18/06 ,  C23C18/14 ,  C23C18/1603 ,  C23C18/1608 ,  C23C18/1612 ,  C23C18/1653 ,  C23C18/1657 ,  C23C18/208 ,  C23C18/36 ,  C23C18/42 ,  H05K3/105 ,  H05K3/106 ,  H05K3/185 ,  H05K3/202 ,  H05K3/205 ,  H05K2203/0117 ,  H05K2203/0156 ,  H05K2203/302 ,  Y10T29/49986

摘要： A method of forming microstructures. An article including a metal atom precursor is disproportionally exposed to electromagnetic radiation in an amount and intensity sufficient to convert some of the precursor to elemental metal. Additional conductive material may then be deposited onto the elemental metal to produce a microstructure.

摘要翻译： 一种形成微观结构的方法。 包含金属原子前体的物品不均匀地暴露于电磁辐射，其量和强度足以将一些前体转化为元素金属。 然后可以将另外的导电材料沉积到元素金属上以产生微结构。

公开(公告)号：US20010006722A1

公开(公告)日：2001-07-05

申请号：US09748530

申请日：2000-12-22

申请人： ALPS ELECTRIC CO., LTD

发明人： Osamu Sakai ,  Keiji Takagi

IPC分类号： B32B005/00 ,  B05D005/12 ,  H05K001/09 ,  B23K026/00

CPC分类号： H05K3/225 ,  B05D3/06 ,  B05D5/005 ,  B23K26/32 ,  B23K26/34 ,  B23K35/025 ,  B23K35/0255 ,  B23K35/0261 ,  B23K2101/34 ,  B23K2101/40 ,  B23K2103/08 ,  B23K2103/50 ,  C03C17/23 ,  C03C2217/231 ,  C03C2217/255 ,  C03C2218/32 ,  C03C2218/34 ,  C23C18/08 ,  C23C18/14 ,  G02F2001/136263 ,  G03F1/72 ,  Y10S428/901 ,  Y10T428/24917 ,  Y10T428/24926

摘要： Paste comprising metallic organic compound, in particular, gold-based metallic organic compound is used as a conductive material for repairing the broken defective part and is baked. This can produce a very thin metallic film having low electric resistance. Further, a semiconductor laser is used as a heating unit to heat only the broken defective part, and a heating profile having a baking process of provisional baking and main baking and a cooling process is provided to produce the high-quality thin metallic film having no crack and a dense texture.

公开(公告)号：US5976618A

公开(公告)日：1999-11-02

申请号：US939923

申请日：1997-09-29

申请人： Shun-ichi Fukuyama ,  Daitei Shin ,  Yuki Komatsu ,  Hideki Harada

发明人： Shun-ichi Fukuyama ,  Daitei Shin ,  Yuki Komatsu ,  Hideki Harada

IPC分类号： H01L21/316 ,  C23C18/12 ,  G02F1/1333 ,  H01L21/312 ,  H01L21/768 ,  H01L51/00 ,  H01L51/05 ,  B05D3/02

CPC分类号： C23C18/122 ,  C23C18/1212 ,  C23C18/1283 ,  C23C18/1295 ,  C23C18/14 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02343 ,  H01L21/02348 ,  H01L21/3125 ,  H01L21/316

摘要： A process capable of forming an inorganic film which can be used at a relatively large thickness equivalent to, or greater than, the thickness of an organic SOG, without being subjected to oxidation by O.sub.2 plasma treatment used in a fabrication process of a semiconductor device. Polysilazane is first coated on a base, and the resulting polysilazane film is converted to a silicon dioxide film.

摘要翻译： 能够形成无机膜的方法，该半导体器件的制造工艺中使用的O 2等离子体处理不会被氧化，所以可以以相当于或大于有机SOG的厚度的厚度使用无机膜。 首先将聚硅氮烷涂覆在基材上，将得到的聚硅氮烷膜转变成二氧化硅膜。

公开(公告)号：US5965219A

公开(公告)日：1999-10-12

申请号：US591341

申请日：1996-01-25

申请人： Shinichiro Hayashi ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

发明人： Shinichiro Hayashi ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

IPC分类号： B05D1/00 ,  B05D3/04 ,  B05D3/06 ,  B05D7/24 ,  C23C8/10 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/46 ,  C23C16/48 ,  C23C16/52 ,  C23C18/12 ,  C23C18/14 ,  C23C26/02 ,  C30B7/00 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L27/115 ,  H01L41/24 ,  H05K3/10 ,  C23C8/00

CPC分类号： C23C18/1216 ,  B05D1/00 ,  B05D1/60 ,  B05D3/0493 ,  B05D3/062 ,  B05D3/065 ,  C23C16/4412 ,  C23C16/448 ,  C23C16/4486 ,  C23C16/45561 ,  C23C16/4558 ,  C23C16/46 ,  C23C16/482 ,  C23C16/52 ,  C23C18/14 ,  C23C26/02 ,  C23C8/10 ,  C30B29/68 ,  C30B7/00 ,  C30B7/005 ,  H01L21/31691 ,  H01L27/11502 ,  H01L28/56 ,  H01L28/60 ,  H01L41/317 ,  H01L28/55 ,  H01L41/1871 ,  H05K3/105

摘要： UV radiation is applied to a substrate in a deposition chamber to desorb water and other contaminates from it. A liquid precursor is misted, flowed into the deposition chamber and deposited on a substrate while UV radiation is applied to the mist. The film of liquid on the substrate is dried and annealed on the substrate while the UV radiation is applied to form a solid thin film of a metal oxide. The thin film is then incorporated into an electronic device of an integrated circuit fabricated on the substrate. The application of UV radiation to both the mist during deposition and the thin film after deposition significantly increases the quality of the resulting integrated circuits. The process has been found to be particularly excellent for making BST, strontium bismuth tantalate, and strontium bismuth niobate.

摘要翻译： 将UV辐射施加到沉积室中的基底以从其中解吸水和其它污染物。 液体前体被雾化，流入沉积室并沉积在基底上，同时将紫外线辐射施加于雾。 将衬底上的液体膜干燥并在衬底上退火，同时施加UV辐射以形成金属氧化物的固体薄膜。 然后将薄膜并入到在衬底上制造的集成电路的电子器件中。 在沉积期间将UV辐射施加到雾和沉积后的薄膜显着增加了所得到的集成电路的质量。 已经发现该方法对于制备BST，钽酸锶锶和铌酸铋锶特别优异。

公开(公告)号：US5909042A

公开(公告)日：1999-06-01

申请号：US643451

申请日：1996-05-08

申请人： Masamichi Azuma ,  Larry D. McMillan ,  Carlos A. Paz De Araujo ,  Michael C. Scott

发明人： Masamichi Azuma ,  Larry D. McMillan ,  Carlos A. Paz De Araujo ,  Michael C. Scott

IPC分类号： C30B29/30 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/46 ,  C23C16/48 ,  C23C16/52 ,  C23C18/12 ,  C23C18/14 ,  C30B7/00 ,  C30B29/68 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3205 ,  H01L27/108 ,  H01L27/115 ,  H01L29/94

CPC分类号： H01L21/31691 ,  C23C16/4412 ,  C23C16/448 ,  C23C16/4486 ,  C23C16/45561 ,  C23C16/4558 ,  C23C16/46 ,  C23C16/482 ,  C23C16/52 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/1279 ,  C23C18/1283 ,  C23C18/1295 ,  C23C18/14 ,  C30B29/68 ,  C30B7/00 ,  H01L27/10805 ,  H01L27/11502 ,  H01L28/56 ,  H01L28/60 ,  H01L28/55

摘要： A precursor solution formed of a liquid polyoxyalkylated metal complex in a solvent is applied to a substrate in the formation of a metal oxide thin film. The liquid thin film is baked in air to a temperature up to 500.degree. C. while UV radiation having a wavelength ranging from 180 nm to 300 nm is applied. The thin film can be twice-baked at increasing temperatures while UV radiation is applied at one or both bakings. The film is then annealed at temperature ranging from about 700.degree. C. to 850.degree. C. to produce a thin-film solid metal oxide product. Alternatively, the UV radiation may be applied to the liquid precursor, the thin film may be annealed with UV radiation, or combinations of such applications of UV radiation to the precursor, to the thin film before or after baking, and/or UV annealing may be used. The use of UV radiation significantly reduces the leakage current and carbon impurity content of the final metal oxide.

摘要翻译： 将由溶液中的液态聚氧化烷基化金属络合物形成的前体溶液施加到基板上，形成金属氧化物薄膜。 将液体薄膜在空气中烘烤至高达500℃的温度，同时施加波长为180nm至300nm的UV辐射。 该薄膜可以在增加的温度下进行两次烘烤，同时在一个或两个烘烤处施加UV辐射。 然后将膜在约700℃至850℃的温度范围内退火，以产生薄膜固体金属氧化物产物。 或者，可以将UV辐射施加到液体前体，该薄膜可以在紫外辐射或UV辐射的这种应用的组合与前体之间或在烘烤之前或之后对薄膜进行退火，和/或UV退火 使用。 使用紫外线辐射显着降低了最终金属氧化物的漏电流和碳杂质含量。

公开(公告)号：US5871853A

公开(公告)日：1999-02-16

申请号：US646485

申请日：1996-05-08

申请人： Masamichi Azuma ,  Larry D. McMillan ,  Carlos A. Paz De Araujo ,  Michael C. Scott

发明人： Masamichi Azuma ,  Larry D. McMillan ,  Carlos A. Paz De Araujo ,  Michael C. Scott

IPC分类号： C30B29/30 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/46 ,  C23C16/48 ,  C23C16/52 ,  C23C18/12 ,  C23C18/14 ,  C30B7/00 ,  C30B29/68 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3205 ,  H01L27/108 ,  H01L27/115 ,  H01G4/26

CPC分类号： H01L21/31691 ,  C23C16/4412 ,  C23C16/448 ,  C23C16/4486 ,  C23C16/45561 ,  C23C16/4558 ,  C23C16/46 ,  C23C16/482 ,  C23C16/52 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/1279 ,  C23C18/1283 ,  C23C18/1295 ,  C23C18/14 ,  C30B29/68 ,  C30B7/00 ,  H01L27/10805 ,  H01L27/11502 ,  H01L28/56 ,  H01L28/60 ,  H01L28/55

摘要： A precursor solution formed of a liquid polyoxyalkylated metal complex in a solvent is applied to a substrate in the formation of a metal oxide thin film. The liquid thin film is baked in air to a temperature up to 500.degree. C. while UV radiation having a wavelength ranging from 180 nm to 300 nm is applied. The thin film can be twice-baked at increasing temperatures while UV radiation is applied at one or both bakings. The film is then annealed at temperature ranging from about 700.degree. C. to 850.degree. C. to produce a thin-film solid metal oxide product. Alternatively, the UV radiation may be applied to the liquid precursor, the thin film may be annealed with UV radiation, or combinations of such applications of UV radiation to the precursor, to the thin film before or after baking, and/or UV annealing may be used. The use of UV radiation significantly reduces the leakage current and carbon impurity content of the final metal oxide.

摘要翻译： 将由溶液中的液态聚氧化烷基化金属络合物形成的前体溶液施加到基板上，形成金属氧化物薄膜。 将液体薄膜在空气中烘烤至高达500℃的温度，同时施加波长为180nm至300nm的UV辐射。 该薄膜可以在增加的温度下进行两次烘烤，同时在一个或两个烘烤处施加UV辐射。 然后将膜在约700℃至850℃的温度范围内退火，以产生薄膜固体金属氧化物产物。 或者，可以将UV辐射施加到液体前体，该薄膜可以在紫外辐射或UV辐射的这种应用的组合与前体之间或在烘烤之前或之后对薄膜进行退火，和/或UV退火 使用。 使用紫外线辐射显着降低了最终金属氧化物的漏电流和碳杂质含量。

公开(公告)号：US5770260A

公开(公告)日：1998-06-23

申请号：US886018

申请日：1997-06-30

申请人： Shun-ichi Fukuyama ,  Daitei Shin ,  Yuki Komatsu ,  Hideki Harada ,  Yoshihiro Nakata ,  Michiko Kobayashi ,  Yoshiyuki Okura

发明人： Shun-ichi Fukuyama ,  Daitei Shin ,  Yuki Komatsu ,  Hideki Harada ,  Yoshihiro Nakata ,  Michiko Kobayashi ,  Yoshiyuki Okura

IPC分类号： H01L21/316 ,  C23C18/12 ,  G02F1/1333 ,  H01L21/312 ,  H01L21/768 ,  H01L51/00 ,  H01L51/05 ,  B05D3/02 ,  B05D3/06

CPC分类号： C23C18/122 ,  C23C18/1212 ,  C23C18/1283 ,  C23C18/1295 ,  C23C18/14 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02343 ,  H01L21/02348 ,  H01L21/3125 ,  H01L21/316

摘要： A process capable of forming an inorganic film which can be used at a relatively large thickness equivalent to, or greater than, the thickness of an organic SOG, without being subjected to oxidation by O.sub.2 plasma treatment used in a fabrication process of a semiconductor device. Polysilazane is first coated on a base, and the resulting polysilazane film is converted to a silicon dioxide film.

公开(公告)号：US5723361A

公开(公告)日：1998-03-03

申请号：US270510

申请日：1994-07-05

申请人： Masamichi Azuma ,  Carlos A. Paz De Araujo ,  Michael C. Scott

发明人： Masamichi Azuma ,  Carlos A. Paz De Araujo ,  Michael C. Scott

IPC分类号： C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/46 ,  C23C16/48 ,  C23C16/52 ,  C23C18/12 ,  C23C18/14 ,  C30B7/00 ,  H01C7/10 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L27/108 ,  H01L27/115 ,  H01L21/44

CPC分类号： C04B35/4682 ,  C04B35/6264 ,  C23C16/4412 ,  C23C16/448 ,  C23C16/4486 ,  C23C16/45561 ,  C23C16/4558 ,  C23C16/46 ,  C23C16/482 ,  C23C16/52 ,  C23C18/1216 ,  C23C18/1275 ,  C23C18/14 ,  C30B29/68 ,  C30B7/00 ,  H01C7/1013 ,  H01L21/314 ,  H01L21/31691 ,  H01L27/10805 ,  H01L27/11502 ,  H01L28/56 ,  H01L28/60 ,  C04B2235/3213 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3243 ,  C04B2235/3268 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/72 ,  H01L28/55

摘要： A method for fabricating an integrate circuit capacitor having a dielectric layer comprising BST with excess A-site and B-site materials such as barium and titanium added. An organometallic or metallic soap precursor solution is prepared comprising a stock solution of BST of greater than 99.999% purity blended with excess A-site and B-site materials such as barium and titanium such that the barium is in the range of 0.01-100 mol %, and such that the titanium is in the range of 0.01-100 mol %. A xylene exchange is then performed to adjust the viscosity of the solution for spin-on application to a substrate. The precursor solution is spun on a first electrode, dried at 400.degree. C. for 2 to 10 minutes, then annealed at 650.degree. C. to 800.degree. C. for about an hour to form a layer of BST with excess titanium. A second electrode is deposited, patterned, and annealed at between 650.degree. C. to 800.degree. C. for about 30 minutes. The resultant capacitor exhibits an enlarged dielectric constant with little change in leakage current.

摘要翻译： 一种用于制造集成电路电容器的方法，该集成电路电容器具有包含BST的介电层，其中添加了过量的A位和B位的材料如钡和钛。 制备有机金属或金属皂前体溶液，其包含与过量的A位点和B位部位材料如钡和钛混合的大于99.999％纯度的BST的储备溶液，使得钡在0.01-100mol ％，并且使得钛在0.01〜100摩尔％的范围内。 然后进行二甲苯交换以调节溶液的粘度，以便旋涂到基底上。 将前体溶液在第一电极上旋转，在400℃下干燥2至10分钟，然后在650℃至800℃退火约1小时以形成具有过量钛的BST层。 在650℃至800℃下沉积，图案化和退火第二电极约30分钟。 所得到的电容器的介电常数增大，漏电流几乎没有变化。