Apparatus and method for directing gas towards a specimen
    91.
    发明申请
    Apparatus and method for directing gas towards a specimen 有权
    用于将气体引向试样的装置和方法

    公开(公告)号:US20050199806A1

    公开(公告)日:2005-09-15

    申请号:US10799145

    申请日:2004-03-12

    Abstract: The invention provides an apparatus and a method for directing gas towards a specimen, said apparatus includes: (i) means for directing a beam of charged particles towards the specimen; and (ii) a gas conduit providing gas to an area of incidence of said beam of charged particles onto said specimen. The gas conduit includes an intermediate portion having a first end for receiving the inert gas and a substantially sealed second end. The intermediate portion has a first and second apertures that are positioned such as to define a space through which the beam of charged particles can propagate. The intermediate portion is shaped such as to allow a first portion of the inert gas to exit the second aperture and to allow a second portion of the gas to propagate towards the second end and to be returned through the second aperture.

    Abstract translation: 本发明提供了一种用于将气体引导到试样的装置和方法,所述装置包括:(i)用于将带电粒子束引向样品的装置; 和(ii)气体导管,其向所述样品上的所述带电粒子束的入射区域提供气体。 气体导管包括具有用于接收惰性气体的第一端和基本密封的第二端的中间部分。 中间部分具有第一和第二孔,所述第一和第二孔被定位成限定了带电粒子束可以传播的空间。 中间部分成形为允许惰性气体的第一部分离开第二孔,并允许气体的第二部分朝向第二端传播并通过第二孔返回。

    Thermoelectric cooling in gas-assisted FIB system
    94.
    发明授权
    Thermoelectric cooling in gas-assisted FIB system 失效
    气体辅助FIB系统中的热电冷却

    公开(公告)号:US5747818A

    公开(公告)日:1998-05-05

    申请号:US734746

    申请日:1996-10-21

    Abstract: Apparatus for supplying a jet of chemical vapor at a substantially constant rate comprises a crucible for containing a quantity of chemical, a hollow needle, a flow path from the crucible to the hollow needle, a Peltier element in thermal communication with the crucible, and a temperature control circuit responsive to temperature in the crucible for powering the Peltier element so as to maintain temperature of the crucible substantially constant. The temperature control circuit powers the Peltier element so as to maintain temperature of the crucible below (or above) ambient temperature. The apparatus is useful in a system for modifying an integrated circuit specimen which further comprises a vacuum chamber and an ion-optical column for directing a focused ion beam at an integrated circuit specimen within the vacuum chamber. Control of vapor pressure, and thus flow rate, offers improved control over FIB processing of integrated circuit specimens.

    Abstract translation: 用于以基本上恒定的速率供应化学蒸汽的喷射的装置包括用于容纳一定数量的化学品,空心针,从坩埚到中空针的流动路径的坩埚,与坩埚热连通的珀尔帖元件 温度控制电路响应于坩埚中的温度,为珀尔帖元件供电,以保持坩埚的温度基本上恒定。 温度控制电路为珀尔帖元件供电,以将坩埚的温度保持在(或高于)环境温度以下。 该装置在用于修改集成电路样本的系统中是有用的,该系统还包括真空室和用于将聚焦离子束引导到真空室内的集成电路样本的离子 - 光学柱。 蒸汽压力的控制以及因此的流速提高了对集成电路样本的FIB处理的改进的控制。

    Process and device for surface-modification by physico-chemical
reactions of gases or vapors on surfaces, using highly-charged ions
    95.
    发明授权
    Process and device for surface-modification by physico-chemical reactions of gases or vapors on surfaces, using highly-charged ions 失效
    使用高电荷离子的表面上的气体或蒸气的物理化学反应进行表面改性的方法和装置

    公开(公告)号:US5645897A

    公开(公告)日:1997-07-08

    申请号:US284632

    申请日:1995-01-18

    Applicant: Jurgen Andra

    Inventor: Jurgen Andra

    Abstract: The invention concerns a process and a device for surface-modification by physico-chemical reactions with the following steps: a) contacting a solid surface having a crystalline or amorphous structure with a reactive, gaseous fluid (gas, gas mixture, vapour or vapour mixture) which is to interact with the surface; (b) supplying activating energy to the contact area between fluid and surface by means of ions or plasmas, in order to trigger reactions between said partners. In order to improve such a process and device, the activating energy is supplied as ions having at least a double charge and low kinetic energy or plasma streams with a sufficient proportion of ions having at least a double charge and low kinetic energy. The kinetic energy imparted to the ions is selected so that it allows the ions to closely approach the surface atoms but no to enter the surface.

    Abstract translation: PCT No.PCT / EP93 / 00214 Sec。 371 1995年1月18日第 102(e)日期1995年1月18日PCT 1993年1月30日PCT PCT。 出版物WO93 / 日期1993年8月19日本发明涉及通过以下步骤通过物理化学反应进行表面改性的方法和装置:a)使具有结晶或无定形结构的固体表面与反应性气态流体(气体,气体混合物 ,蒸汽或蒸气混合物),其与表面相互作用; (b)通过离子或等离子体将激活能量提供给流体和表面之间的接触区域,以便触发所述伙伴之间的反应。 为了改进这种方法和装置,激活能量被提供为具有至少具有至少双电荷和低动能或等离子体流的离子,其具有足够比例的具有至少双电荷和低动能的离子。 选择赋予离子的动能,使得其允许离子紧密接近表面原子,但不允许进入表面。

    Localized vacuum apparatus and method
    97.
    发明授权
    Localized vacuum apparatus and method 失效
    本地化真空设备和方法

    公开(公告)号:US5103102A

    公开(公告)日:1992-04-07

    申请号:US315732

    申请日:1989-02-24

    CPC classification number: H01J37/18 H01J2237/006

    Abstract: An apparatus for generating a localized, non-contact vacuum seal at a selected process region of a workpiece surface includes a vacuum body with a workpiece-facing surface having a plurality of concentric grooves and a central bore thorugh which a process energy beam can be transmitted. A method of generating a localized vacuum seal includes placing the vacuum body into selected proximity with the process region of the workpiece surface, and differentially evacuating the grooves, thereby defining differentially pumped vacuum chambers which reduce the influx of atmospheric particles to the process region. A selected control gas can be introduced into a vacuum body groove to further reduce the influx of atmospheric particles to the process region, and selected process gases can be introduced into the vacuum body to react with the process beam.

    Multilayered device micro etching method and system
    98.
    发明授权
    Multilayered device micro etching method and system 失效
    多层器件微蚀刻法和系统

    公开(公告)号:US5055696A

    公开(公告)日:1991-10-08

    申请号:US391304

    申请日:1989-08-08

    Abstract: In locally reactive etching by irradiating to a multilayered workpiece reactive beam generated by extracting the reactant gas ionized or by irradiating such focussing beam as ion beam, electron beam or laser beam to the multilayered workpiece in an atmosphere of reactant gas; each layer of a multilayered device comprising a plurality of layers formed on a substrate can be accurately and quickly eteched by detecting the change of the material of the layer currently being etched and after detecting the change of material, switching reactant gas to be ionized or atmospheric reactant gas to one complying with the material of the layer currently being etched. This multilayered device micro etching method can be readily put into practice by a multilayered device micro etching system further comprising means for detecting the change of the material of layer to be etched and means for switching and supplying a plurality of reactant gases, in a micro etching appratus for performing locally rective etching.

    Abstract translation: 在局部反应蚀刻中,通过照射到通过提取离子化的反应物气体产生的多层工件反应性束,或者通过在反应气体的气氛中将这样的聚焦束作为离子束,电子束或激光束照射到多层工件; 通过检测当前被蚀刻的层的材料的变化,并且在检测到材料的变化,切换待离子化或大气的反应气体之后,可以精确而快速地将包含形成在基板上的多层的多层器件的每个层 反应气体与符合当前蚀刻层的材料一致。 这种多层器件微蚀刻方法可以通过多层器件微蚀刻系统容易地实施,该多层器件微蚀刻系统还包括用于在微蚀刻中检测被蚀刻层的材料的变化和用于切换和供应多个反应气体的装置的装置 用于进行局部矫正蚀刻。

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