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    Fabrication of a metalized blind via
    6.
    发明申请
    Fabrication of a metalized blind via 失效
    金属化盲孔的制造

    公开(公告)号：US20030054635A1

    公开(公告)日：2003-03-20

    申请号：US10282275

    申请日：2002-10-28

    Inventor： Frank D. Egitto ,  Elizabeth Foster ,  Raymond T. Galasco ,  David E. Houser ,  Mark L. Janecek ,  Thomas E. Kindl ,  Jeffrey A. Knight ,  Stephen W. MacQuarrie ,  Voya R. Markovich ,  Luis J. Matienzo ,  Amarjit S. Rai ,  David J. Russell ,  William T. Wike

    IPC: H01L021/44

    CPC classification number: H01L21/486 ,  H01L23/49827 ,  H01L2224/16225 ,  H05K3/0032 ,  H05K3/0035 ,  H05K3/424 ,  H05K2201/0323 ,  H05K2203/1136

    Abstract: A method and structure for forming a metalized blind via. A dielectric layer is formed on a metallic layer, followed by laser drilling a depression in the dielectric layer such that a carbon film that includes the carbon is formed on a sidewall of the depression. If the laser drilling does not expose the metallic layer, then an anisotropic plasma etching, such as a reactive ion etching (RIE), may be used to clean and expose a surface of the metallic layer. The dielectric layer comprises a dielectric material having a carbon based polymeric material, such as a permanent photoresist, a polyimide, and advanced solder mask (ASM). The metallic layer includes a metallic material, such as copper, aluminum, and gold. The carbon film is in conductive contact with the metallic layer, and the carbon film is sufficiently conductive to permit electroplating a continuous layer of metal (e.g., copper) directly on the carbon film without need of an electrolessly plated layer underneath the electroplated layer. The laser drilling is accomplished using a laser radiation having a wavelength between about 180 nanometers and about 600 nanometers. The depression may have any cross-sectional shape and any spatial distribution of depths. As an example, the depression may include a blind via, a rectangular channel, or a combination thereof.

    Abstract translation: 用于形成金属化盲孔的方法和结构。 在金属层上形成电介质层，随后在电介质层中激光钻出凹陷，使得在凹陷的侧壁上形成包含碳的碳膜。 如果激光钻孔不暴露金属层，则可以使用诸如反应离子蚀刻（RIE）的各向异性等离子体蚀刻来清洁和暴露金属层的表面。 电介质层包括具有碳基聚合物材料的介电材料，例如永久性光致抗蚀剂，聚酰亚胺和先进的焊接掩模（ASM）。 金属层包括金属材料，例如铜，铝和金。 碳膜与金属层导电接触，并且碳膜具有足够的导电性，以允许直接在碳膜上电镀连续的金属层（例如铜），而不需要在电镀层下面的无电镀层。 激光钻孔使用波长在约180纳米和约600纳米之间的激光辐射完成。 凹陷可以具有任何横截面形状和深度的任何空间分布。 作为示例，凹陷可以包括盲孔，矩形通道或其组合。

    Fabrication of a metalized blind via
    7.
    发明授权
    Fabrication of a metalized blind via 有权
    金属化盲孔的制造

    公开(公告)号：US06522014B1

    公开(公告)日：2003-02-18

    申请号：US09670968

    申请日：2000-09-27

    Applicant: Frank D. Egitto ,  Elizabeth Foster ,  Raymond T. Galasco ,  David E. Houser ,  Mark L. Janecek ,  Thomas E. Kindl ,  Jeffrey A. Knight ,  Stephen W. MacQuarrie ,  Voya R. Markovich ,  Luis J. Matienzo ,  Amarjit S. Rai ,  David J. Russell ,  William T. Wike

    Inventor： Frank D. Egitto ,  Elizabeth Foster ,  Raymond T. Galasco ,  David E. Houser ,  Mark L. Janecek ,  Thomas E. Kindl ,  Jeffrey A. Knight ,  Stephen W. MacQuarrie ,  Voya R. Markovich ,  Luis J. Matienzo ,  Amarjit S. Rai ,  David J. Russell ,  William T. Wike

    IPC: H01L2348

    CPC classification number: H01L21/486 ,  H01L23/49827 ,  H01L2224/16225 ,  H05K3/0032 ,  H05K3/0035 ,  H05K3/424 ,  H05K2201/0323 ,  H05K2203/1136

    Abstract: A method and structure for forming a metalized blind via. A dielectric layer is formed on a metallic layer, followed by laser drilling a depression in the dielectric layer such that a carbon film that includes the carbon is formed on a sidewall of the depression. If the laser drilling does not expose the metallic layer, then an anisotropic plasma etching, such as a reactive ion etching (RIE), may be used to clean and expose a surface of the metallic layer. The dielectric layer comprises a dielectric material having a carbon based polymeric material, such as a permanent photoresist, a polyimide, and advanced solder mask (ASM). The metallic layer includes a metallic material, such as copper, aluminum, and gold. The carbon film is in conductive contact with the metallic layer, and the carbon film is sufficiently conductive to permit electroplating a continuous layer of metal (e.g., copper) directly on the carbon film without need of an electrolessly plated layer underneath the electroplated layer. The laser drilling is accomplished using a laser radiation having a wavelength between about 180 nanometers and about 600 nanometers. The depression may have any cross-sectional shape and any spatial distribution of depths. As an example, the depression may include a blind via, then the blind via may have any cross-sectional shape, such as circular or non-circular, a rectangular channel, or a combination thereof.

    Abstract translation: 用于形成金属化盲孔的方法和结构。 在金属层上形成电介质层，随后在电介质层中激光钻出凹陷，使得在凹陷的侧壁上形成包含碳的碳膜。 如果激光钻孔不暴露金属层，则可以使用诸如反应离子蚀刻（RIE）的各向异性等离子体蚀刻来清洁和暴露金属层的表面。 电介质层包括具有碳基聚合物材料的介电材料，例如永久性光致抗蚀剂，聚酰亚胺和先进的焊接掩模（ASM）。 金属层包括金属材料，例如铜，铝和金。 碳膜与金属层导电接触，并且碳膜具有足够的导电性，以允许直接在碳膜上电镀连续的金属层（例如铜），而不需要在电镀层下面的无电镀层。 激光钻孔使用波长在约180纳米和约600纳米之间的激光辐射完成。 凹陷可以具有任何横截面形状和深度的任何空间分布。 作为示例，凹陷可以包括盲孔，则盲孔可以具有任何横截面形状，例如圆形或非圆形，矩形通道或其组合。

    Method of fabricating thin film circuits with high density circuit interconnects by pyrolosis of an adhesive
    9.
    发明授权
    Method of fabricating thin film circuits with high density circuit interconnects by pyrolosis of an adhesive 失效
    通过粘合剂热裂解制造具有高密度电路互连的薄膜电路的方法

    公开(公告)号：US5489551A

    公开(公告)日：1996-02-06

    申请号：US376209

    申请日：1995-01-20

    Applicant: Donald E. Castleberry

    Inventor： Donald E. Castleberry

    IPC: H01L31/0224 ,  H01R4/04 ,  H01R43/02 ,  H05K3/32 ,  H05K3/36 ,  H01L21/283 ,  H01L21/60

    CPC classification number: H05K3/321 ,  H01L31/0224 ,  H01R43/0256 ,  H01R4/04 ,  H01R43/0221 ,  H05K2201/0108 ,  H05K2201/0323 ,  H05K2201/10136 ,  H05K2203/107 ,  H05K2203/1136 ,  H05K3/361 ,  Y10T29/49144

    Abstract: A method of fabricating a high density thin film circuit includes the step of bonding a high density connector having a plurality of electrical connection lines with a wafer having a plurality of electrical contact pads arranged in a pattern with a pitch less than about 100 .mu.m so that an electrical coupling is formed between the wafer contact pads and connector electrical connection lines. The step of forming the electrical coupling comprises pyrolysis of an adhesive disposed between the high density connector and said wafer. The electrical coupling between the contact pads and electrical connection lines is formed by directing a laser beam on the area in which the electrical coupling is to be formed so as to cause thermal decomposition of the adhesive to form a conductive carbon material; portions of the wafer contact pads and the connector electrical connection lines are also welded to the conductive carbon material.

    Abstract translation: 一种制造高密度薄膜电路的方法包括将具有多个电连接线的高密度连接器与具有多个电接触焊盘的晶片接合的步骤，该多个电接触焊盘以小于约100μm的间距排列， 在晶片接触焊盘和连接器电连接线之间形成电耦合。 形成电耦合的步骤包括热分解设置在高密度连接器和所述晶片之间的粘合剂。 接触焊盘和电连接线之间的电耦合通过将激光束引导到要形成电耦合的区域上以使粘合剂热分解形成导电碳材料而形成; 晶片接触焊盘和连接器电连接线的部分也焊接到导电碳材料上。

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