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    Micro-plasma field effect transistors
    2.
    发明授权
    Micro-plasma field effect transistors 有权
    微等离子体场效应晶体管

    公开(公告)号：US09269521B2

    公开(公告)日：2016-02-23

    申请号：US14608298

    申请日：2015-01-29

    申请人： UNIVERSITY OF UTAH RESEARCH FOUNDATION

    发明人： Massood Tabib-Azar

    IPC分类号： H01J17/46 ,  H01J17/06 ,  H01J17/49 ,  H01J17/04 ,  H01J17/16

    CPC分类号： H01J17/066 ,  H01J17/04 ,  H01J17/16 ,  H01J17/49

    摘要： In some aspects, a micro-plasma device comprises a plasma gas enclosure containing at least one plasma gas, and a plurality of electrodes interfaced with the plasma gas enclosure. In other aspects, a micro-plasma circuitry apparatus comprises a first layer having a cavity formed therein and a second layer having a circuit formed therein. The circuit includes a micro-plasma circuit (“MPC”) that includes one or more micro-plasma devices (“MPDs”). The first layer of the circuit is bonded to the second layer of the circuit thereby forming an enclosure that contains at least one plasma gas. An excitation voltage is applied to a drain electrode of the MPDs to generate a conductive plasma path between the drain electrode and a source electrode.

    摘要翻译： 在一些方面，微等离子体装置包括含有至少一种等离子体气体的等离子体气体外壳和与等离子体气体外壳相接合的多个电极。 在其他方面，微等离子体电路装置包括其中形成有空腔的第一层和形成有电路的第二层。 该电路包括包括一个或多个微等离子体装置（“MPD”）的微等离子体电路（“MPC”）。 电路的第一层被结合到电路的第二层，由此形成包含至少一个等离子体气体的外壳。 激励电压施加到MPD的漏电极，以在漏电极和源电极之间产生导电等离子体路径。

    Hybrid plasma-semiconductor transistors, logic devices and arrays
    3.
    发明授权
    Hybrid plasma-semiconductor transistors, logic devices and arrays 有权
    混合等离子体半导体晶体管，逻辑器件和阵列

    公开(公告)号：US09263558B2

    公开(公告)日：2016-02-16

    申请号：US14452032

    申请日：2014-08-05

    申请人： The Board of Trustees of the University of Illinois

    发明人： J. Gary Eden ,  Paul A. Tchertchian ,  Clark J. Wagner ,  Dane J. Sievers ,  Thomas J. Houlahan ,  Benben Li

    IPC分类号： H01L29/66 ,  H01L29/73 ,  H01J17/06 ,  H01J17/49 ,  H01L33/02

    CPC分类号： H01J17/36 ,  H01J17/066 ,  H01J17/49 ,  H01J17/497 ,  H01L29/66234 ,  H01L29/73 ,  H01L33/02

    摘要： A hybrid plasma semiconductor device has a thin and flexible semiconductor base layer. An emitter region is diffused into the base layer forming a pn-junction. An insulator layer is upon one side the base layer and emitter region. Base and emitter electrodes are isolated from each other by the insulator layer and electrically contact the base layer and emitter region through the insulator layer. A thin and flexible collector layer is upon an opposite side of the base layer. A microcavity is formed in the collector layer and is aligned with the emitter region. Collector electrodes are arranged to sustain a microplasma within the microcavity with application of voltage to the collector electrodes. A depth of the emitter region and a thickness of the base layer are set to define a predetermined thin portion of the base layer as a base region between the emitter region and the microcavity. Microplasma generated in the microcavity serves as a collector. Logic devices are provided in multiple sub collector and sub emitter microplasma devices formed in thin and flexible or not flexible semiconductor materials.

    摘要翻译： 复合等离子体半导体器件具有薄且柔性的半导体基底层。 发射极区域扩散到形成pn结的基极层中。 绝缘体层位于基极层和发射极区域的一侧。 基极和发射极通过绝缘体层彼此隔离，并通过绝缘体层与基极层和发射极区域电接触。 薄且柔性的集电极层位于基层的相对侧。 在集电极层中形成微腔并与发射极区对准。 集电极被布置为通过向集电极施加电压来维持微腔内的微量。 将发射极区域的深度和基极层的厚度设定为将基底层的预定薄部分定义为发射极区域和微腔体之间的基极区域。 在微腔中产生的微血管作为收集器。 逻辑器件设置在形成为薄且柔性或不柔性半导体材料的多个子集电极和子发射体微质体器件中。

    Flexible and on wafer hybrid plasma-semiconductor transistors
    4.
    发明授权
    Flexible and on wafer hybrid plasma-semiconductor transistors 有权
    柔性和晶圆混合等离子体半导体晶体管

    公开(公告)号：US09184341B2

    公开(公告)日：2015-11-10

    申请号：US14330254

    申请日：2014-07-14

    申请人： The Board of Trustees of the University of Illinois

    发明人： J. Gary Eden ,  Paul A. Tchertchian ,  Clark J. Wagner ,  Dane J. Sievers ,  Thomas J. Houlahan ,  Benben Li

    IPC分类号： H01L29/66 ,  H01L33/02 ,  H01L29/73 ,  H01L29/08 ,  H01J17/49 ,  H01J17/06

    CPC分类号： H01L33/02 ,  H01J17/066 ,  H01J17/49 ,  H01L29/0821 ,  H01L29/7317

    摘要： Preferred embodiment flexible and on wafer hybrid plasma semiconductor devices have at least one active solid state semiconductor region; and a plasma generated in proximity to the active solid state semiconductor region(s). A preferred device is a hybrid plasma semiconductor device having base, emitting and microcavity collector regions formed on a single side of a device layer. Visible or ultraviolet light is emitted during operation by plasma collectors in the array. In preferred embodiments, individual PBJTs in the array serve as sub-pixels of a full-color display.

    摘要翻译： 优选实施例柔性和晶片上混合等离子体半导体器件具有至少一个活性固态半导体区域; 以及在活性固态半导体区域附近产生的等离子体。 优选的装置是混合等离子体半导体器件，其具有形成在器件层的单侧上的基极，发射和微腔集电极区域。 在阵列中的等离子体收集器的操作期间发出可见光或紫外光。 在优选实施例中，阵列中的各个PBJT用作全色显示器的子像素。

    FLEXIBLE AND ON WAFER HYBRID PLASMA-SEMICONDUCTOR TRANSISTORS
    8.
    发明申请
    FLEXIBLE AND ON WAFER HYBRID PLASMA-SEMICONDUCTOR TRANSISTORS 有权
    柔性和等离子体混合等离子体半导体晶体管

    公开(公告)号：US20140319654A1

    公开(公告)日：2014-10-30

    申请号：US14330254

    申请日：2014-07-14

    申请人： The Board of Trustees of the University of Illinois

    发明人： J. Gary Eden ,  Paul A. Tchertchian ,  Clark J. Wagner ,  Dane J. Sievers ,  Thomas J. Houlahan ,  Benben Li

    IPC分类号： H01L33/02

    CPC分类号： H01L33/02 ,  H01J17/066 ,  H01J17/49 ,  H01L29/0821 ,  H01L29/7317

    摘要： Preferred embodiment flexible and on wafer hybrid plasma semiconductor devices have at least one active solid state semiconductor region; and a plasma generated in proximity to the active solid state semiconductor region(s). A preferred device is a hybrid plasma semiconductor device having base, emitting and microcavity collector regions formed on a single side of a device layer. Visible or ultraviolet light is emitted during operation by plasma collectors in the array. In preferred embodiments, individual PBJTs in the array serve as sub-pixels of a full-color display.

    摘要翻译： 优选实施例柔性和晶片上混合等离子体半导体器件具有至少一个活性固态半导体区域; 以及在活性固态半导体区域附近产生的等离子体。 优选的装置是混合等离子体半导体器件，其具有形成在器件层的单侧上的基极，发射和微腔集电极区域。 在阵列中的等离子体收集器的操作期间发出可见光或紫外光。 在优选实施例中，阵列中的各个PBJT用作全色显示器的子像素。

    Flat panel display device, stereoscopic display device, plasma display device
    9.
    发明授权
    Flat panel display device, stereoscopic display device, plasma display device 有权
    平板显示装置，立体显示装置，等离子体显示装置

    公开(公告)号：US08836882B2

    公开(公告)日：2014-09-16

    申请号：US13380032

    申请日：2011-11-22

    申请人： Yi-Cheng Kuo ,  Yu-Chun Hsiao ,  Chong Huang ,  Jia-He Cheng

    发明人： Yi-Cheng Kuo ,  Yu-Chun Hsiao ,  Chong Huang ,  Jia-He Cheng

    IPC分类号： G02F1/1333 ,  H01J17/49 ,  G09F13/04 ,  H01J11/10 ,  G02F1/1335 ,  G02B27/22

    CPC分类号： H01J11/10 ,  G02B27/2214 ,  G02F1/133308 ,  G02F1/133608 ,  G02F2001/133314 ,  G02F2001/133328 ,  G09F13/04 ,  H01J17/49

    摘要： The present invention provides a flat panel display device, which includes a backlight system and a display panel. The backlight system includes a light source, a light homogenization mechanism, and a back frame. The back frame carries the light source and the light homogenization mechanism. The back frame includes at least first and second primary assembling pieces, in which the first primary assembling piece has an end forming at least two joint sections, and each of the joint sections has a structure mating an end of the second primary assembling piece. The first primary assembling piece uses one of the joint sections to join the corresponding end of the second primary assembling piece. The present invention also provides a stereoscopic display device and a plasma display device. The back frame mold of the flat panel display device, the stereoscopic display device, and the plasma display device of the present invention is of a simple structure and can reduce the expenditure of the back frame mold, and can also save the material used for back frame so as to lower down the cost of flat panel display device.

    摘要翻译： 本发明提供一种平板显示装置，其包括背光系统和显示面板。 背光系统包括光源，光匀化机构和后框架。 后框架带有光源和光均质机构。 后框架包括至少第一和第二主组装件，其中第一主组件具有形成至少两个接头部分的端部，并且每个接头部分具有与第二主组装件的端部配合的结构。 第一主组装件使用一个接合部分来连接第二主组装件的相应端部。 本发明还提供一种立体显示装置和等离子体显示装置。 本发明的平板显示装置，立体显示装置和等离子体显示装置的背框模具结构简单，可以减少背框模具的消耗，并且还可以节省用于背部的材料 框架，以降低平板显示设备的成本。

    Plasma display panel
    10.
    发明授权
    Plasma display panel 有权
    等离子显示面板

    公开(公告)号：US08624479B2

    公开(公告)日：2014-01-07

    申请号：US13837388

    申请日：2013-03-15

    申请人： Panasonic Corporation

    发明人： Kojiro Okuyama

    IPC分类号： H01J17/49

    CPC分类号： H01J17/49 ,  C09K11/595 ,  C09K11/7776 ,  H01J11/42

    摘要： Provided is a high-efficiency plasma display panel having short decay time and high luminance and color purity. The plasma display panel includes a green phosphor layer emitting visible light when excited with vacuum ultraviolet rays, in which the green phosphor layer is formed of a green phosphor containing 30% by weight or more and 60% by weight or less of a phosphor represented by a general formula: dZnO.(2−d)MnO.eSiO2 (1.80≦d≦1.90, 1.00≦e≦1.02) and one of a phosphor represented by a general formula: aYO3/2.(3−a)CeO3/2.bAlO3/2.cGaO3/2.fWO3 (2.80≦a≦2.99, 3.00≦b≦5.00, 0≦c≦2.00, 0.003≦f≦0.020, where 4.00≦b+c≦5.00) and a phosphor represented by a general formula: aYO3/2.(3−a)CeO3/2.bAlO3/2.cGaO3/2.gK2WO4 (2.80≦a≦2.99, 3.00≦b≦5.00, 0≦c≦2.00, 0.003≦g≦0.015, where 4.00≦b+c≦5.00).

    摘要翻译： 提供了具有短衰减时间和高亮度和色纯度的高效等离子体显示面板。 等离子体显示面板包括在用真空紫外线激发时发出可见光的绿色荧光体层，其中绿色荧光体层由含有30重量％以上且60重量％以下的绿色荧光体形成，荧光体以 通式为dZnO（2-d）MnO.eSiO 2（1.80×d @ 1.90,1.00e @ e @ 1.02）和由通式aYO 3/2表示的荧光体之一（3-a）CeO 3/2 .bAlO3 / 2.cGaO3 / 2.fWO3（2.80 @ a @ 2.99,3.00 @ b @ 5.00,0 @ c @ 2.00，0.003 @ f @ 0.020，其中4.00 @ b + c @ 5.00）和由 通式：aYO3 / 2。（3-a）CeO3 / 2.bAlO3 / 2.cGaO3 / 2.gK2WO4（2.80 @ a @ 2.99,3.00 @ b @ 5.00,0 @ c @ 2.00，0.003 @ g @ 0.015， 其中4.00 @ b + c @ 5.00）。