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    COPPER SUBSTRATE FOR DEPOSITION OF GRAPHENE
    5.
    发明申请
    COPPER SUBSTRATE FOR DEPOSITION OF GRAPHENE 有权
    用于沉积石墨的铜基材

    公开(公告)号：US20130316167A1

    公开(公告)日：2013-11-28

    申请号：US13817533

    申请日：2012-05-25

    Applicant: Thomas A. Yager ,  Joshua Robinson

    Inventor： Thomas A. Yager ,  Joshua Robinson

    IPC: C23C16/26

    CPC classification number: C01B31/0453 ,  C01B32/186 ,  C23C14/022 ,  C23C14/14 ,  C23C14/34 ,  C23C14/545 ,  C23C16/0281 ,  C23C16/26 ,  C23C16/52 ,  C23C16/545 ,  H01J37/3426 ,  H01J37/347 ,  H01J37/3476 ,  H01J2237/022 ,  H01J2237/081 ,  H01J2237/24578 ,  H01J2237/2487 ,  H01J2237/3323 ,  Y10T428/265 ,  Y10T428/30

    Abstract: Technologies are presented for growing graphene by chemical vapor deposition (CVD) on a high purity copper surface. The surface may be prepared by deposition of a high purity copper layer on a lower purity copper substrate using deposition processes such as sputtering, evaporation, electroplating, or CVD. The deposition of the high purity copper layer may be followed by a thermal treatment to facilitate grain growth. Use of the high purity copper layer in combination with the lower purity copper substrate may provide thermal expansion matching, compatibility with copper etch removal, or reduction of contamination, producing fewer graphene defects compared to direct deposition on a lower purity substrate at substantially less expense than deposition approaches using a high purity copper foil substrate.

    Abstract translation: 介绍了通过化学气相沉积（CVD）在高纯度铜表面上生长石墨烯的技术。 表面可以通过使用诸如溅射，蒸发，电镀或CVD的沉积工艺在高纯度铜基底上沉积高纯度铜层来制备。 高纯度铜层的沉积之后可以进行热处理以促进晶粒生长。 与较低纯度的铜基底结合使用高纯度铜层可以提供热膨胀匹配，与铜蚀刻去除的相容性，或减少污染，产生较少的石墨烯缺陷，与直接沉积在较低纯度的基底上相比，费用低得多 使用高纯度铜箔衬底的沉积方法。

    Ion source
    8.
    发明授权
    Ion source 失效
    离子源

    公开(公告)号：US07569837B2

    公开(公告)日：2009-08-04

    申请号：US11780651

    申请日：2007-07-20

    Applicant: Nishino Shigehiro ,  Ono Ryoichi

    Inventor： Nishino Shigehiro ,  Ono Ryoichi

    IPC: H01J49/10 ,  H01J49/12 ,  H01J27/02 ,  H01J27/22

    CPC classification number: H01J27/14 ,  H01J27/02 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/032 ,  H01J2237/038 ,  H01J2237/061 ,  H01J2237/081

    Abstract: It is a technical challenge to provide a small-sized ion source excellent in operability.An ion source of the present invention includes: a cylindrical insulation tube (2) opened upward and opened at part of its lower surface; a plurality of hollow cylindrical permanent magnets (3), provided on the outer peripheral surface of the insulation tube to be arranged in a row in the axial direction of the insulation tube; a gas supplying means (34, 35, 20) for supplying gas into the insulation tube; a cathode electrode, at the tip end of which a fitting unit (19) for fitting of a solid material (18) there to is formed; an annular anode electrode (5), which is fitted to an opening in the lower surface of the insulation tube; an upper frame (6), which blocks the upper portion of the insulation tube and suspends the cathode electrode so as to allow the fitting unit to approach the anode electrode; and a lower frame (7), in which an extraction port (37) is formed for extracting ions emitted from the anode electrode, and on which the insulation tube is mounted.

    Abstract translation: 提供极佳的可操作性的小型离子源是技术挑战。 本发明的离子源包括：向上敞开并在其下表面的一部分开口的圆柱形绝缘管（2） 多个中空圆柱形永磁体（3），设置在所述绝缘管的外周面上，以在所述绝缘管的轴向上排成一列; 用于将气体供应到所述绝缘管中的气体供给装置（34,35,20） 阴极，其顶端形成有用于将固体材料（18）配合到其上的嵌合单元（19）; 环形阳极电极（5），其安装在绝缘管的下表面的开口处; 上部框架（6），其阻挡绝缘管的上部并悬挂阴极电极，以使装配单元接近阳极电极; 和下框架（7），其中形成用于提取从阳极发射的离子的提取口（37），并且安装有绝缘管。

    Ion generation apparatus and thin film forming apparatus and ion source utilizing the ion generation apparatus
    9.
    发明授权
    Ion generation apparatus and thin film forming apparatus and ion source utilizing the ion generation apparatus 失效
    离子发生装置和利用离子发生装置的薄膜形成装置和离子源

    公开(公告)号：US5022977A

    公开(公告)日：1991-06-11

    申请号：US198500

    申请日：1988-05-25

    Applicant: Morito Matsuoka ,  Ken-ichi Ono

    Inventor： Morito Matsuoka ,  Ken-ichi Ono

    IPC: H01J27/18 ,  H01J37/32

    CPC classification number: H01J37/32623 ,  H01J27/18 ,  H01J37/32192 ,  H01J37/32357 ,  H01J37/3266 ,  H01J37/32678 ,  H01J2237/081

    Abstract: An ion generation apparatus utilizes microwaves and employs the electron cyclotron resonance phenomenon to generate plasma. The plasma is confined in a plasma generation chamber by a mirror field, whereby high density plasma is obtained. A target disposed within the plasma generation chamber is sputtered by the ions in the high density plasma, so that a large number of ions is produced. This ion generation apparatus can be employed in a thin film forming apparatus which forms a thin film on the surface of a substrate by directing the ions and neutral particles to the substrate. An ion extracting grid may be included. Permanent magnets may be disposed at the upper and lower ends of the target disposed in the plasma generation chamber so as to permit the leakage of magnetic flux to the inner surface of the target. This permits the film to be formed at a high rate even when the voltage applied to the target is relatively low.

    Abstract translation: PCT No.PCT / JP87 / 00695 Sec。 371日期：1988年5月25日 102（e）日期1988年5月25日PCT提交1987年9月24日PCT公布。 出版物WO88 / 02546 日期：1988年4月7日。离子产生装置利用微波并采用电子回旋共振现象产生等离子体。 等离子体通过镜面场限制在等离子体产生室中，从而获得高密度等离子体。 设置在等离子体发生室内的靶被高密度等离子体中的离子溅射，从而产生大量的离子。 该离子产生装置可以用于通过将离子和中性粒子引导到基底而在基底表面上形成薄膜的薄膜形成装置中。 可以包括离子提取网格。 永磁体可以设置在设置在等离子体产生室中的靶的上端和下端，以允许磁通量泄漏到靶的内表面。 这使得即使当施加到目标的电压相对较低时也能以高速率形成膜。

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