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    Wafer inspection apparatuses
    1.
    发明授权
    Wafer inspection apparatuses 有权

    公开(公告)号：US11688623B2

    公开(公告)日：2023-06-27

    申请号：US16834132

    申请日：2020-03-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Racine Elysia Auxter Nassau ,  Namil Koo ,  Suhwan Park ,  Taeheung Ahn ,  Sangyeon Oh

    IPC: H01L21/683 ,  H01L21/687 ,  G01N21/95

    CPC classification number: H01L21/6838 ,  G01N21/9501 ,  H01L21/68714

    Abstract: A wafer inspection apparatus includes a support structure including a frame and vacuum chucks mounted thereon, each vacuum chuck having a support surface including a vacuum suction portion, the support structure configured to structurally support a wafer on one or more vacuum chucks, the frame defining an opening larger than an area of the wafer. The wafer inspection apparatus includes an electromagnetic wave emitter configured to irradiate an inspection electromagnetic wave to the wafer, a sensor configured to receive the inspection electromagnetic wave from the wafer based on the inspection electromagnetic wave passing through the wafer, and a driver configured to move at least one of the electromagnetic wave emitter or the frame to change an irradiation location of the wafer. Each vacuum chuck is configured to be selectively movable between a first location and a second location in relation to the frame.

    SHOCK ABSORBING PLATE AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME
    3.
    发明公开
    SHOCK ABSORBING PLATE AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME 审中-公开

    公开(公告)号：US20240021414A1

    公开(公告)日：2024-01-18

    申请号：US18141341

    申请日：2023-04-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Suhwan Park ,  Ohchel Kwon ,  Yongmyung Jun ,  Gwanwoo Min ,  Hyeongkwon Jeong

    IPC: H01J37/32

    CPC classification number: H01J37/32477 ,  H01J37/32522 ,  H01J37/3244 ,  H01J2237/334

    Abstract: A shock absorbing plate configured to absorb a shock between a first plate and a second plate stacked on the first plate in a vertical direction, positioned between the first plate and the second plate so that the first plate is apart from the second plate in the vertical direction, and having a circular shape when viewed in the vertical direction. When no pressure is applied to the shock absorbing plate, a vertical thickness of the shock absorbing plate is greatest at a center thereof and decreases from the center toward an outer edge thereof. A plurality of holes penetrate the shock absorbing plate in the vertical direction. A friction coefficient and an elastic modulus of the shock absorbing plate are less than a friction coefficient and an elastic modulus of each of the first plate and the second plate.

    MATERIAL MEASUREMENT SYSTEM AND METHOD
    4.
    发明申请
    MATERIAL MEASUREMENT SYSTEM AND METHOD 有权

    公开(公告)号：US20250003734A1

    公开(公告)日：2025-01-02

    申请号：US18639332

    申请日：2024-04-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sungyoon Ryu ,  Ingi Kim ,  Suhwan Park ,  Inkeun Baek ,  Younghoon Sohn ,  Soobin Sinn ,  Yusin Yang ,  Sunhong Jun ,  Ikseon Jeon

    IPC: G01B11/06

    Abstract: A measuring system measures an overall resistance of two or more films on a substrate/measurement object by a terahertz absorption measurement and an overall film thickness by a photoacoustic measurement. The system estimates a first film thickness based on the overall resistance, then subtracts this estimated thickness from the overall film thickness measured by the photoacoustic measurement. The system includes a source unit to output a laser beam. A first pump-probe unit receives the laser beam and performs a photoacoustic test on the measurement object. A second pump-probe unit receives the laser beam and performs a terahertz signal test on the measurement object. The system also includes a stage to support the measurement object and controls for controlling elements and calculating the film thicknesses

    THIN-FILM DEPOSITION APPARATUS
    5.
    发明公开
    THIN-FILM DEPOSITION APPARATUS 审中-公开

    公开(公告)号：US20240218561A1

    公开(公告)日：2024-07-04

    申请号：US18515664

    申请日：2023-11-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Janghwi Lee ,  Yeontae Kim ,  Junbum Park ,  Hunyong Park ,  Suhwan Park ,  Sangwoo Bae ,  Motoshi Sakai ,  Wondon Joo ,  Jaeho Jin

    IPC: C30B25/16 ,  C30B25/12

    CPC classification number: C30B25/16 ,  C30B25/12

    Abstract: A thin-film deposition apparatus includes: a housing; a chamber located within the housing and providing an internal space; a platform disposed within the chamber and configured to support a substrate; a reflector disposed within the housing and disposed outside the chamber; a light source disposed between opposing walls of the reflector and configured to radiate light onto the substrate; a light receiver disposed within the housing, spaced apart from the light source with a portion of the reflector therebetween, and having a hole through which light emitted from the substrate is introduced; an optical cable connected to the light receiver and extending to the outside of the housing; and a sensor disposed outside the housing, connected to the optical cable, and configured to measure a temperature of the substrate by analyzing light transmitted from the optical cable.

    Inspection apparatus and method of inspecting wafer
    6.
    发明授权
    Inspection apparatus and method of inspecting wafer 有权

    公开(公告)号：US12196669B2

    公开(公告)日：2025-01-14

    申请号：US17882673

    申请日：2022-08-08

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Martin Priwisch ,  Jongmin Yoon ,  Suhwan Park ,  Inkeun Baek

    IPC: G01N21/3581 ,  G01N21/95 ,  G01Q60/22 ,  G01R31/311

    Abstract: An inspection apparatus includes: a first probe including a receiver antenna configured to detect the terahertz wave emitted by an inspection signal source and that has passed through the wafer, wherein the first probe includes: a first probe tip in which the receiver antenna is embedded, the receiver antenna including a first photoconductive switch; a first printed circuit board on which the first probe tip is mounted; a first optical bracket coupled to the first printed circuit board; a first optical connector configured to transmit a first laser beam into the first probe, and coupled to the first optical bracket, wherein the first laser beam is configured to excite the first photoconductive switch.

    TERAHERTZ PROBE
    7.
    发明公开
    TERAHERTZ PROBE 审中-公开

    公开(公告)号：US20230417820A1

    公开(公告)日：2023-12-28

    申请号：US18134731

    申请日：2023-04-14

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Martin Priwisch ,  Alexander Michalski ,  Michael Nagel ,  Namil Koo ,  Suhwan Park ,  Junbum Park ,  Inkeun Baek ,  Jongmin Yoon ,  Yoonkyung Jang ,  Ikseon Jeon

    IPC: G01R31/265 ,  G01R1/07

    CPC classification number: G01R31/2656 ,  G01R1/07

    Abstract: According to embodiments, a cantilever is provided. The cantilever includes a first conductive line, a second conductive line, and a third conductive line extending on the substrate, a microtip arranged on the substrate, and an emitter antenna arranged on the microtip, connected to the first to third conductive lines, and configured to produce a scattering signal of a terahertz wave band, wherein the emitter antenna includes a first emitter electrode connected to the first conductive line, a second emitter electrode connected to the second conductive line and adjacent to the first emitter electrode, a third emitter electrode connected to the third conductive line and spaced apart from the first emitter electrode with the second emitter electrode in-between, and a scattering part connecting the first and second emitter electrodes with each other.

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