CONTAMINANT ANALYSIS APPARATUS AND WATER QUALITY MONITORING SYSTEM

    公开(公告)号:US20220365058A1

    公开(公告)日:2022-11-17

    申请号:US17659695

    申请日:2022-04-19

    Abstract: A real-time wastewater treatment and water quality monitoring system includes a plurality of wastewater treatment facilities configured to purify wastewater generated from semiconductor manufacturing lines, a plurality of contaminant analysis apparatuses configured to obtain and analyze a sample from effluent water discharged through discharge pipes of the wastewater treatment facilities respectively, discharge rate sensors installed in the discharge pipes respectively, and an integrated monitoring apparatus configured to receive measurement result values from the contaminant analysis apparatuses and the discharge rate sensors and monitor in real time concentration of a contaminant in an entirety of the effluent water that is purified and discharged from the wastewater generated in the semiconductor manufacturing lines.

    THIN-FILM DEPOSITION APPARATUS
    4.
    发明公开

    公开(公告)号:US20240218561A1

    公开(公告)日:2024-07-04

    申请号:US18515664

    申请日:2023-11-21

    CPC classification number: C30B25/16 C30B25/12

    Abstract: A thin-film deposition apparatus includes: a housing; a chamber located within the housing and providing an internal space; a platform disposed within the chamber and configured to support a substrate; a reflector disposed within the housing and disposed outside the chamber; a light source disposed between opposing walls of the reflector and configured to radiate light onto the substrate; a light receiver disposed within the housing, spaced apart from the light source with a portion of the reflector therebetween, and having a hole through which light emitted from the substrate is introduced; an optical cable connected to the light receiver and extending to the outside of the housing; and a sensor disposed outside the housing, connected to the optical cable, and configured to measure a temperature of the substrate by analyzing light transmitted from the optical cable.

    Method of forming a semiconductor device with an injector having first and second outlets

    公开(公告)号:US10381461B2

    公开(公告)日:2019-08-13

    申请号:US15649996

    申请日:2017-07-14

    Abstract: A method of forming a semiconductor device includes: loading a wafer onto a susceptor, wherein the susceptor is disposed inside a chamber; heating the inside of the chamber; and rotating the susceptor, and first forming a film on the wafer by outputting a reactive gas and a carrier gas from an injector disposed at a sidewall of the chamber to form a semiconductor device having a first layer, wherein the first layer is manufactured under a first condition, wherein the injector includes a first outlet exposed within the chamber to discharge the carrier gas directly into the chamber and a second outlet exposed within the chamber to discharge the reactive gas directly into the chamber, wherein the first outlet is disposed below the second outlet.

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