公开(公告)号：US20250046635A1

公开(公告)日：2025-02-06

申请号：US18666563

申请日：2024-05-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangchul Han ,  Yihwan Kim ,  Youngbok Lee ,  Junho Lee ,  SeokJun Hong

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687

Abstract: A method of processing a substrate includes locating a substrate in a substrate processing apparatus, fixing the substrate in the substrate processing apparatus, processing the substrate, and checking a fixed state of the substrate. The substrate processing apparatus includes a process chamber, a stage supporting the substrate, a plasma induction electrode used to generate plasma and located in the stage, a first power source configured to supply RF power to the plasma induction electrode, a heater located in the stage and used to heat the stage, a second power source configured to supply AC power to the heater, and a monitoring unit electrically connected to the plasma induction electrode. The checking of the fixed state of the substrate includes measuring AC-2 power of the AC power, which is transferred to the monitoring unit through the heater and the plasma induction electrode.

公开(公告)号：US11322583B2

公开(公告)日：2022-05-03

申请号：US16821565

申请日：2020-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungkeun Lim ,  Unki Kim ,  Yuyeong Jo ,  Yihwan Kim ,  Jinbum Kim ,  Pankwi Park ,  Ilgyou Shin ,  Seunghun Lee

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02

Abstract: A semiconductor device includes; an active region; an isolation region defining the active region; a barrier layer on the active region; an upper semiconductor layer on the barrier layer; and a gate structure covering an upper surface, a lower surface, and side surfaces of the upper semiconductor layer in a first direction. The first direction is a direction parallel to an upper surface of the active region, and the barrier layer is disposed between the gate structure and the active region.

公开(公告)号：US11171224B2

公开(公告)日：2021-11-09

申请号：US16889899

申请日：2020-06-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Chan Suh ,  Sangmoon Lee ,  Yihwan Kim ,  Woo Bin Song ,  Dongsuk Shin ,  Seung Ryul Lee

IPC: H01L29/66 ,  H01L21/28 ,  H01L29/786 ,  H01L29/423 ,  H01L29/78

Abstract: A method for manufacturing a semiconductor device and a semiconductor device, the method including forming an active pattern on a substrate such that the active pattern includes sacrificial patterns and semiconductor patterns alternately and repeatedly stacked on the substrate; and forming first spacer patterns at both sides of each of the sacrificial patterns by performing an oxidation process, wherein the first spacer patterns correspond to oxidized portions of each of the sacrificial patterns, wherein the sacrificial patterns include a first semiconductor material containing impurities, wherein the semiconductor patterns include a second semiconductor material different from the first semiconductor material, and wherein the impurities include an element different from semiconductor elements of the first semiconductor material and the second semiconductor material.

公开(公告)号：US20200373385A1

公开(公告)日：2020-11-26

申请号：US16821565

申请日：2020-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungkeun Lim ,  Unki Kim ,  Yuyeong Jo ,  Yihwan Kim ,  Jinbum Kim ,  Pankwi Park ,  Ilgyou Shin ,  Seunghun Lee

IPC: H01L29/06 ,  H01L29/66 ,  H01L21/02 ,  H01L29/78

Abstract: A semiconductor device includes; an active region; an isolation region defining the active region; a barrier layer on the active region; an upper semiconductor layer on the barrier layer; and a gate structure covering an upper surface, a lower surface, and side surfaces of the upper semiconductor layer in a first direction. The first direction is a direction parallel to an upper surface of the active region, and the barrier layer is disposed between the gate structure and the active region.

公开(公告)号：US12142671B2

公开(公告)日：2024-11-12

申请号：US17514008

申请日：2021-10-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Chan Suh ,  Sangmoon Lee ,  Yihwan Kim ,  Woo Bin Song ,  Dongsuk Shin ,  Seung Ryul Lee

IPC: H01L29/66 ,  H01L21/28 ,  H01L29/423 ,  H01L29/786 ,  H01L29/78

Abstract: A method for manufacturing a semiconductor device and a semiconductor device, the method including forming an active pattern on a substrate such that the active pattern includes sacrificial patterns and semiconductor patterns alternately and repeatedly stacked on the substrate; and forming first spacer patterns at both sides of each of the sacrificial patterns by performing an oxidation process, wherein the first spacer patterns correspond to oxidized portions of each of the sacrificial patterns, wherein the sacrificial patterns include a first semiconductor material containing impurities, wherein the semiconductor patterns include a second semiconductor material different from the first semiconductor material, and wherein the impurities include an element different from semiconductor elements of the first semiconductor material and the second semiconductor material.

公开(公告)号：US10692993B2

公开(公告)日：2020-06-23

申请号：US15956166

申请日：2018-04-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Chan Suh ,  Sangmoon Lee ,  Yihwan Kim ,  Woo Bin Song ,  Dongsuk Shin ,  Seung Ryul Lee

IPC: H01L21/82 ,  H01L29/66 ,  H01L21/28 ,  H01L29/786 ,  H01L29/423 ,  H01L29/78

Abstract: A method for manufacturing a semiconductor device and a semiconductor device, the method including forming an active pattern on a substrate such that the active pattern includes sacrificial patterns and semiconductor patterns alternately and repeatedly stacked on the substrate; and forming first spacer patterns at both sides of each of the sacrificial patterns by performing an oxidation process, wherein the first spacer patterns correspond to oxidized portions of each of the sacrificial patterns, wherein the sacrificial patterns include a first semiconductor material containing impurities, wherein the semiconductor patterns include a second semiconductor material different from the first semiconductor material, and wherein the impurities include an element different from semiconductor elements of the first semiconductor material and the second semiconductor material.

公开(公告)号：US10208401B2

公开(公告)日：2019-02-19

申请号：US15664294

申请日：2017-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keum Seok Park ,  Sunjung Kim ,  Yihwan Kim

IPC: C30B25/04 ,  C30B33/12 ,  C30B25/12 ,  C30B25/14 ,  C30B31/16 ,  C30B31/14 ,  H01L21/02 ,  H01L29/66

Abstract: Disclosed is a substrate treating apparatus comprising a wafer chuck on which a substrate is placed, an injector unit on a side of the wafer chuck and injecting process gases that include a first gas and a second gas, and a gas supply unit supplying the process gases to the injector unit. The gas supply unit comprises first and second gas supply sources that respectively accommodate the first and second gases, first and second gas supply lines that respectively connect the first and second gas supply sources to the injector unit, and first and second heating units that are respectively disposed on the first and second gas supply lines. The first heating units disposed on the first gas supply line have a density per unit length greater than the density per unit length of the second heating units disposed on the second gas supply line.

公开(公告)号：US20250011932A1

公开(公告)日：2025-01-09

申请号：US18535442

申请日：2023-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junho Lee ,  Yeontae Kim ,  Yihwan Kim ,  Youngbok Lee ,  Sangchul Han

IPC: C23C16/455

Abstract: A showerhead includes a showerhead body positioned at an upper surface of a reaction chamber and configured to inject a reaction gas toward a substrate in the reaction chamber and at least one groove in a lower surface of the showerhead body, where the showerhead body is oriented toward the substrate and the lower surface of the showerhead body includes a slanted structure.

公开(公告)号：US20240297215A1

公开(公告)日：2024-09-05

申请号：US18658794

申请日：2024-05-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungkeun Lim ,  Unki Kim ,  Yuyeong Jo ,  Yihwan Kim ,  Jinbum Kim ,  Pankwi Park ,  Ilgyou Shin ,  Seunghun Lee

IPC: H01L29/06 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0638 ,  H01L21/0245 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785

Abstract: A semiconductor device includes; an active region; an isolation region defining the active region; a barrier layer on the active region; an upper semiconductor layer on the barrier layer; and a gate structure covering an upper surface, a lower surface, and side surfaces of the upper semiconductor layer in a first direction. The first direction is a direction parallel to an upper surface of the active region, and the barrier layer is disposed between the gate structure and the active region.

公开(公告)号：US11996443B2

公开(公告)日：2024-05-28

申请号：US17729676

申请日：2022-04-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungkeun Lim ,  Unki Kim ,  Yuyeong Jo ,  Yihwan Kim ,  Jinbum Kim ,  Pankwi Park ,  Ilgyou Shin ,  Seunghun Lee

IPC: H01L29/06 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0638 ,  H01L21/0245 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785

Abstract: A semiconductor device includes; an active region; an isolation region defining the active region; a barrier layer on the active region; an upper semiconductor layer on the barrier layer; and a gate structure covering an upper surface, a lower surface, and side surfaces of the upper semiconductor layer in a first direction. The first direction is a direction parallel to an upper surface of the active region, and the barrier layer is disposed between the gate structure and the active region.