公开(公告)号：US20250046635A1

公开(公告)日：2025-02-06

申请号：US18666563

申请日：2024-05-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangchul Han ,  Yihwan Kim ,  Youngbok Lee ,  Junho Lee ,  SeokJun Hong

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687

Abstract: A method of processing a substrate includes locating a substrate in a substrate processing apparatus, fixing the substrate in the substrate processing apparatus, processing the substrate, and checking a fixed state of the substrate. The substrate processing apparatus includes a process chamber, a stage supporting the substrate, a plasma induction electrode used to generate plasma and located in the stage, a first power source configured to supply RF power to the plasma induction electrode, a heater located in the stage and used to heat the stage, a second power source configured to supply AC power to the heater, and a monitoring unit electrically connected to the plasma induction electrode. The checking of the fixed state of the substrate includes measuring AC-2 power of the AC power, which is transferred to the monitoring unit through the heater and the plasma induction electrode.