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    Substrate Treating Apparatus
    2.
    发明申请
    Substrate Treating Apparatus 有权
    基板处理装置

    公开(公告)号：US20140291421A1

    公开(公告)日：2014-10-02

    申请号：US14187556

    申请日：2014-02-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： SeokHoon Kim ,  Yongmyung Jun ,  Yongsun Ko ,  Kyoungseob Kim ,  Jung-Min Oh ,  Kuntack Lee ,  Jihoon Jeong ,  Yong-Jhin Cho

    IPC: B05B1/14

    CPC classification number: H01L21/6708 ,  H01L21/67017 ,  H01L21/67051

    Abstract: Provided is a substrate treating apparatus including a housing; a plurality of opening-and-closing members configured to provide a driving force for opening and closing the housing; a fluid storing member supplying a fluid to the opening-and-closing members; and a fluid distribution unit connected to the fluid storing member via a supply conduit to distribute the fluid supplied from the fluid storing member to the opening-and-closing members. The fluid distribution unit includes a distribution conduit diverging from the supply conduit and connected to a corresponding one of the opening-and-closing members; and a fluid distribution member provided at a junction between the supply conduit and the distribution conduit.

    Abstract translation: 提供一种基板处理装置，包括壳体; 多个打开和关闭构件，其构造成提供用于打开和关闭壳体的驱动力; 向开闭部件供给流体的流体存储部件; 以及流体分配单元，其经由供应管道连接到流体存储构件，以将从流体存储构件供应的流体分配到打开和关闭构件。 流体分配单元包括从供应导管分支并连接到相应的一个打开和关闭构件的分配管道; 以及设置在供应管道和分配管道之间的接合处的流体分配构件。

    Substrate treating apparatus
    3.
    发明授权
    Substrate treating apparatus 有权

    公开(公告)号：US09627233B2

    公开(公告)日：2017-04-18

    申请号：US14187556

    申请日：2014-02-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： SeokHoon Kim ,  Yongmyung Jun ,  Yongsun Ko ,  Kyoungseob Kim ,  Jung-Min Oh ,  Kuntack Lee ,  Jihoon Jeong ,  Yong-Jhin Cho

    IPC: B05B1/14 ,  H01L21/67

    CPC classification number: H01L21/6708 ,  H01L21/67017 ,  H01L21/67051

    Abstract: Provided is a substrate treating apparatus including a housing; a plurality of opening-and-closing members configured to provide a driving force for opening and closing the housing; a fluid storing member supplying a fluid to the opening-and-closing members; and a fluid distribution unit connected to the fluid storing member via a supply conduit to distribute the fluid supplied from the fluid storing member to the opening-and-closing members. The fluid distribution unit includes a distribution conduit diverging from the supply conduit and connected to a corresponding one of the opening-and-closing members; and a fluid distribution member provided at a junction between the supply conduit and the distribution conduit.

    APPARATUS AND METHODS FOR TREATING A SUBSTRATE
    5.
    发明申请
    APPARATUS AND METHODS FOR TREATING A SUBSTRATE 有权
    用于处理基板的装置和方法

    公开(公告)号：US20130145640A1

    公开(公告)日：2013-06-13

    申请号：US13707253

    申请日：2012-12-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyosan Lee ,  Yongsun Ko ,  Kyongseob Kim ,  Kwangsu Kim ,  SeokHoon Kim ,  Kuntack Lee ,  Yongmyung Jun ,  Yong-Jhin Cho

    IPC: F26B5/04

    CPC classification number: H01L21/67034 ,  F26B5/04 ,  H01L21/02052 ,  H01L21/67051 ,  H01L21/6715

    Abstract: A substrate treatment apparatus is provided. The apparatus may include a process chamber configured to have an internal space, a substrate supporting member disposed in the process chamber to support a substrate, a first supplying port configured to supply a supercritical fluid to a region of the internal space located below the substrate, a second supplying port configured to supply a supercritical fluid to other region of the internal space located over the substrate, and an exhaust port configured to exhaust the supercritical fluid from the process chamber to an exterior region.

    Abstract translation: 提供了一种基板处理装置。 该装置可以包括被配置为具有内部空间的处理室，设置在处理室中以支撑基板的基板支撑构件，被配置为将超临界流体供应到位于基板下方的内部空间的区域的第一供应端口， 第二供应端口，其构造成将超临界流体供应到位于所述基板上方的所述内部空间的其他区域;以及排气端口，其构造成将所述超临界流体从所述处理室排出到外部区域。

    SHOCK ABSORBING PLATE AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME
    6.
    发明公开
    SHOCK ABSORBING PLATE AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME 审中-公开

    公开(公告)号：US20240021414A1

    公开(公告)日：2024-01-18

    申请号：US18141341

    申请日：2023-04-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Suhwan Park ,  Ohchel Kwon ,  Yongmyung Jun ,  Gwanwoo Min ,  Hyeongkwon Jeong

    IPC: H01J37/32

    CPC classification number: H01J37/32477 ,  H01J37/32522 ,  H01J37/3244 ,  H01J2237/334

    Abstract: A shock absorbing plate configured to absorb a shock between a first plate and a second plate stacked on the first plate in a vertical direction, positioned between the first plate and the second plate so that the first plate is apart from the second plate in the vertical direction, and having a circular shape when viewed in the vertical direction. When no pressure is applied to the shock absorbing plate, a vertical thickness of the shock absorbing plate is greatest at a center thereof and decreases from the center toward an outer edge thereof. A plurality of holes penetrate the shock absorbing plate in the vertical direction. A friction coefficient and an elastic modulus of the shock absorbing plate are less than a friction coefficient and an elastic modulus of each of the first plate and the second plate.

    Method and apparatus for purifying cleaning agent
    7.
    发明授权
    Method and apparatus for purifying cleaning agent 有权

    公开(公告)号：US09934959B2

    公开(公告)日：2018-04-03

    申请号：US14537318

    申请日：2014-11-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yong-Jhin Cho ,  Jung-Min Oh ,  Yongmyung Jun ,  Yongsun Ko ,  Kuntack Lee ,  Hyosan Lee

    IPC: H01L21/02

    CPC classification number: H01L21/02101 ,  H01L21/02057

    Abstract: A method of purifying a cleaning agent is provided. The method includes heating a first mixed solution including an etching agent, a first cleaning agent, and a second cleaning agent at or below a first temperature and distilling the etching agent and the first cleaning agent and removing the second cleaning agent. The method includes condensing or compressing the etching agent and the first cleaning agent forming a second mixed solution including the etching agent and the first cleaning agent. The method includes heating the second mixed solution at a temperature lower than a second temperature, redistilling the etching agent and extracting the first cleaning agent. The second temperature is lower than the first temperature.

    Apparatus and methods for treating a substrate
    9.
    发明授权
    Apparatus and methods for treating a substrate 有权
    用于处理基底的装置和方法

    公开(公告)号：US09534839B2

    公开(公告)日：2017-01-03

    申请号：US13707253

    申请日：2012-12-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyosan Lee ,  Yongsun Ko ,  Kyongseob Kim ,  Kwangsu Kim ,  SeokHoon Kim ,  Kuntack Lee ,  Yongmyung Jun ,  Yong-Jhin Cho

    IPC: F26B5/04 ,  H01L21/67

    CPC classification number: H01L21/67034 ,  F26B5/04 ,  H01L21/02052 ,  H01L21/67051 ,  H01L21/6715

    Abstract: A substrate treatment apparatus is provided. The apparatus may include a process chamber configured to have an internal space, a substrate supporting member disposed in the process chamber to support a substrate, a first supplying port configured to supply a supercritical fluid to a region of the internal space located below the substrate, a second supplying port configured to supply a supercritical fluid to other region of the internal space located over the substrate, and an exhaust port configured to exhaust the supercritical fluid from the process chamber to an exterior region.

    Abstract translation: 提供了一种基板处理装置。 该装置可以包括被配置为具有内部空间的处理室，设置在处理室中以支撑基板的基板支撑构件，被配置为将超临界流体供应到位于基板下方的内部空间的区域的第一供应端口， 第二供应端口，其构造成将超临界流体供应到位于所述基板上方的所述内部空间的其他区域;以及排气端口，其构造成将所述超临界流体从所述处理室排出到外部区域。

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