SUBSTRATE PROCESSING APPARATUS, SEMICONDUCTOR MANUFACTURING EQUIPMENT, AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20220075268A1

    公开(公告)日:2022-03-10

    申请号:US17466101

    申请日:2021-09-03

    Abstract: A substrate processing apparatus includes a processing chamber providing a processing space for processing a substrate and processing a substrate, a substrate support configured to support the substrate, a blocking plate below the substrate support and configured to prevent supercritical fluid from being directly sprayed onto the substrate, a first supply device configured to supply supercritical fluid under a first condition to the processing chamber, a second supply device configured to supply supercritical fluid under a second condition at a higher temperature than that of supercritical fluid under the first condition to the processing chamber, a discharge device configured to discharge supercritical fluid from the processing chamber, and a control device configured to control operations of the first supply device, the second supply device, and the discharge device. The control device is configured to direct the first supply device to supply supercritical fluid prior to the second supply device.

    Substrate processing apparatus and substrate processing method

    公开(公告)号:US12211716B2

    公开(公告)日:2025-01-28

    申请号:US17664243

    申请日:2022-05-20

    Abstract: A substrate processing apparatus includes a chamber including an upper chamber and a lower chamber coupled to each other to provide a space for processing a substrate, a substrate support configured to support the substrate within the chamber, an upper supply port provided in the upper chamber and configured to supply a supercritical fluid on an upper surface of the substrate within the chamber, a recess provided in a lower surface of the upper chamber, the recess including a horizontal extension portion extending in a direction parallel with the upper surface of the substrate in a radial direction from an outlet of the upper supply port and an inclined extension portion extending obliquely at an angle from the horizontal extension portion, and a baffle member disposed within the recess between the upper supply port and the substrate.

    APPARATUS FOR PROCESSING A SUBSTRATE

    公开(公告)号:US20220199440A1

    公开(公告)日:2022-06-23

    申请号:US17381507

    申请日:2021-07-21

    Abstract: An apparatus for processing a substrate may include a wet chamber, a dry chamber, a first transfer robot and a shared shutter. The wet chamber may be configured to process the substrate using a chemical. The dry chamber may be adjacent the wet chamber and configured to dry the substrate processed by the wet chamber. The first transfer robot may be configured to transfer the substrate between the wet chamber and the dry chamber. The shared shutter may be between the wet chamber and the dry chamber. A connection opening through which the substrate may be transferred may be formed between the wet chamber and the dry chamber. The shared shutter may be configured to open and close the connection opening.

    SUBSTRATE PROCESSING APPARATUS, SEMICONDUCTOR MANUFACTURING EQUIPMENT, AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20230244150A1

    公开(公告)日:2023-08-03

    申请号:US18186359

    申请日:2023-03-20

    CPC classification number: G03F7/16 G03F7/70033

    Abstract: A substrate processing apparatus includes a processing chamber providing a processing space for processing a substrate and processing a substrate, a substrate support configured to support the substrate, a blocking plate below the substrate support and configured to prevent supercritical fluid from being directly sprayed onto the substrate, a first supply device configured to supply supercritical fluid under a first condition to the processing chamber, a second supply device configured to supply supercritical fluid under a second condition at a higher temperature than that of supercritical fluid under the first condition to the processing chamber, a discharge device configured to discharge supercritical fluid from the processing chamber, and a control device configured to control operations of the first supply device, the second supply device, and the discharge device. The control device is configured to direct the first supply device to supply supercritical fluid prior to the second supply device.

    Apparatus for processing a substrate

    公开(公告)号:US11935772B2

    公开(公告)日:2024-03-19

    申请号:US17381507

    申请日:2021-07-21

    CPC classification number: H01L21/67703 H01L21/67739

    Abstract: An apparatus for processing a substrate may include a wet chamber, a dry chamber, a first transfer robot and a shared shutter. The wet chamber may be configured to process the substrate using a chemical. The dry chamber may be adjacent the wet chamber and configured to dry the substrate processed by the wet chamber. The first transfer robot may be configured to transfer the substrate between the wet chamber and the dry chamber. The shared shutter may be between the wet chamber and the dry chamber. A connection opening through which the substrate may be transferred may be formed between the wet chamber and the dry chamber. The shared shutter may be configured to open and close the connection opening.

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