公开(公告)号：US20230244150A1

公开(公告)日：2023-08-03

申请号：US18186359

申请日：2023-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon Jeong ,  Seohyun Kim ,  Sukhoon Kim ,  Younghoo Kim ,  Sangjine Park ,  Kuntack Lee

IPC: G03F7/16 ,  G03F7/20

CPC classification number: G03F7/16 ,  G03F7/70033

Abstract: A substrate processing apparatus includes a processing chamber providing a processing space for processing a substrate and processing a substrate, a substrate support configured to support the substrate, a blocking plate below the substrate support and configured to prevent supercritical fluid from being directly sprayed onto the substrate, a first supply device configured to supply supercritical fluid under a first condition to the processing chamber, a second supply device configured to supply supercritical fluid under a second condition at a higher temperature than that of supercritical fluid under the first condition to the processing chamber, a discharge device configured to discharge supercritical fluid from the processing chamber, and a control device configured to control operations of the first supply device, the second supply device, and the discharge device. The control device is configured to direct the first supply device to supply supercritical fluid prior to the second supply device.

公开(公告)号：US12101923B2

公开(公告)日：2024-09-24

申请号：US18207689

申请日：2023-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaewha Park ,  Moonkeun Kim ,  Sukhoon Kim ,  Dongchan Lim

IPC: H10B12/00

CPC classification number: H10B12/053 ,  H10B12/315 ,  H10B12/34 ,  H10B12/482

Abstract: A semiconductor device manufacturing method according to the exemplary embodiments of the disclosure includes patterning a substrate, thereby forming an active pattern, forming a trench penetrating the active pattern, forming a support layer covering the trench, forming a first opening at the support layer, forming a gate electrode layer filling the trench through the first opening, and forming a bit line structure electrically connected to the active pattern. The support layer includes a base portion covering a top surface of the active pattern, and a support disposed in the trench.

公开(公告)号：US20220075268A1

公开(公告)日：2022-03-10

申请号：US17466101

申请日：2021-09-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon Jeong ,  Seohyun Kim ,  Sukhoon Kim ,  Younghoo Kim ,  Sangjine Park ,  Kuntack Lee

IPC: G03F7/16 ,  G03F7/20

Abstract: A substrate processing apparatus includes a processing chamber providing a processing space for processing a substrate and processing a substrate, a substrate support configured to support the substrate, a blocking plate below the substrate support and configured to prevent supercritical fluid from being directly sprayed onto the substrate, a first supply device configured to supply supercritical fluid under a first condition to the processing chamber, a second supply device configured to supply supercritical fluid under a second condition at a higher temperature than that of supercritical fluid under the first condition to the processing chamber, a discharge device configured to discharge supercritical fluid from the processing chamber, and a control device configured to control operations of the first supply device, the second supply device, and the discharge device. The control device is configured to direct the first supply device to supply supercritical fluid prior to the second supply device.

公开(公告)号：US12198923B2

公开(公告)日：2025-01-14

申请号：US17660449

申请日：2022-04-25

Applicant: Semes Co., Ltd. ,  Samsung Electronics Co., Ltd.

Inventor： Hae-Won Choi ,  Anton Koriakin ,  Sangjine Park Park ,  Keonyoung Kim ,  Sukhoon Kim ,  Seohyun Kim ,  Young-Hoo Kim ,  Kuntack Lee ,  Jihoon Jeong

IPC: H01L21/02 ,  C11D1/72 ,  C11D3/43 ,  H01L21/67

Abstract: In a substrate processing method, a rinse process using a rinse solution is performed on a development-processed photoresist pattern on a substrate. A substitution process including a first substitution step using a mixed solution of a non-polar organic solvent and a surfactant and a second substitution step using the non-polar organic solvent is performed on the substrate. The substitution process is performed a plurality of times until the rinse solution remaining on the substrate is less than a predetermined value. A supercritical fluid drying process is performed on the substrate to dry the non-polar organic solvent remaining on the substrate.

公开(公告)号：US20240395615A1

公开(公告)日：2024-11-28

申请号：US18631548

申请日：2024-04-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seokwon Kim ,  Bongjin Kuh ,  Sukhoon Kim ,  Jiho Park ,  Sanghyeok Yu ,  Yongho Ha ,  Musarrat Hasan

IPC: H01L21/768 ,  C23C16/34 ,  C23C16/505

Abstract: A method of manufacturing a semiconductor device includes forming a substrate including a structure having a first region and a contact hole exposing the first region, loading the substrate into a process chamber, repeatedly performing two or more times, a deposition process that includes repeatedly applying radio frequency (RF) plasma power to a process gas for a first time duration and not applying the RF plasma power to the process gas for a second time duration, and a soak process that does not use plasma, at a metal-semiconductor compound formation temperature or higher, within the process chamber, and thereby forming a metal-semiconductor compound layer on the first region, a sidewall material layer on a sidewall of the contact hole, and an upper material layer on the structure, performing a removal process of removing at least a portion of the sidewall material layer in the process chamber, and unloading the substrate from the process chamber after performing the removal process.

公开(公告)号：US12009300B2

公开(公告)日：2024-06-11

申请号：US17569774

申请日：2022-01-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggil Lee ,  Sukhoon Kim ,  Sungmyong Park ,  Chanyang Lee ,  Honyun Park

IPC: H01L23/528 ,  H01L21/768 ,  H10B43/10 ,  H10B43/27 ,  H10B43/40 ,  H10B43/50

CPC classification number: H01L23/5283 ,  H01L21/76816 ,  H01L21/76877 ,  H01L23/528 ,  H10B43/10 ,  H10B43/27 ,  H10B43/40 ,  H10B43/50

Abstract: A wiring structure includes first to third metal patterns on a substrate. The first metal pattern extends in a second direction and has a first width in a third direction. The second metal pattern extends in the third direction to cross the first metal pattern and have a second width in the second direction. The third metal pattern is connected to the first and second metal patterns at an area where the first and second metal patterns cross each other, and has a substantially rectangular shape with concave portions in each quadrant. The third metal pattern has a third width defined as a minimum distance between opposite ones of the concave portions in a fourth direction having an acute angle to the second and third directions, which is less or equal to than a smaller of the first and second widths.

公开(公告)号：US11640115B2

公开(公告)日：2023-05-02

申请号：US17466101

申请日：2021-09-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon Jeong ,  Seohyun Kim ,  Sukhoon Kim ,  Younghoo Kim ,  Sangjine Park ,  Kuntack Lee

IPC: G03F7/20 ,  G03F7/16

Abstract: A substrate processing apparatus includes a processing chamber providing a processing space for processing a substrate and processing a substrate, a substrate support configured to support the substrate, a blocking plate below the substrate support and configured to prevent supercritical fluid from being directly sprayed onto the substrate, a first supply device configured to supply supercritical fluid under a first condition to the processing chamber, a second supply device configured to supply supercritical fluid under a second condition at a higher temperature than that of supercritical fluid under the first condition to the processing chamber, a discharge device configured to discharge supercritical fluid from the processing chamber, and a control device configured to control operations of the first supply device, the second supply device, and the discharge device. The control device is configured to direct the first supply device to supply supercritical fluid prior to the second supply device.

公开(公告)号：US12289880B2

公开(公告)日：2025-04-29

申请号：US17892275

申请日：2022-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seran Oh ,  Sukhoon Kim ,  Sungjoo An ,  Yeonuk Kim

IPC: H10B12/00

Abstract: A semiconductor device includes a substrate including a plurality of active patterns and a bit line intersecting at least one of the plurality of active patterns on the substrate and extending in a first direction. The bit line includes a first conductive pattern extending in the first direction, a bit line capping pattern extending in the first direction on the first conductive pattern, and a graphene pattern extending in the first direction between the first conductive pattern and the bit line capping pattern. The first conductive pattern may include ruthenium (Ru). The semiconductor device may also include one or more bit line contacts arranged in the first direction under the bit line, the one or more bit line contacts electrically connected to a respective one of the plurality of active patterns.

公开(公告)号：US20240381627A1

公开(公告)日：2024-11-14

申请号：US18419907

申请日：2024-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Musarrat Hasan ,  Byounghoon Lee ,  Sukhoon Kim ,  Eulji Jeong

IPC: H10B12/00

Abstract: A semiconductor device includes a substrate including an NMOS region and a PMOS region, a first gate electrode inside the substrate in the NMOS region, and a second gate electrode inside the substrate in the PMOS region. The first gate electrode includes a first electrode pattern, and the second gate electrode includes a second electrode pattern. The first gate electrode further includes a first N-type conductive pattern between the first electrode pattern and the substrate. The second gate electrode further includes a P-type conductive pattern between the second electrode pattern and the substrate, and the P-type conductive pattern includes molybdenum titanium nitride (MoTiN) or molybdenum silicon nitride (MoSiN).

公开(公告)号：US20230238330A1

公开(公告)日：2023-07-27

申请号：US18055530

申请日：2022-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myungho KONG ,  Sukhoon Kim ,  Hoon Cho

IPC: H01L23/535 ,  H01L23/532 ,  H01L27/11582 ,  H01L27/11573

CPC classification number: H01L23/535 ,  H01L23/53209 ,  H01L23/53252 ,  H01L23/53266 ,  H01L27/11582 ,  H01L27/11573

Abstract: A vertical semiconductor device includes insulation patterns, channel structures, a first metal pattern structure and a second metal pattern. The insulation patterns are spaced apart from each other in a vertical direction. Each insulation pattern extends in a first direction parallel to the upper surface of a substrate. The channel structures pass through the insulation patterns. The first metal pattern structure include at least one first metal material, and extend in the first direction. The first metal pattern structure are positioned in a gap between adjacent insulation patterns in the vertical direction, and the first metal pattern structure is at a central portion of the gap. The second metal pattern includes a metal material that is different from the at least one first metal material, the second metal pattern may be on opposite sidewalls of the first metal pattern structure to fill a remainder portion of the gap.