公开(公告)号：US12211745B2

公开(公告)日：2025-01-28

申请号：US17558699

申请日：2021-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Uihyoung Lee ,  Honyun Park ,  Jongseok Lee ,  Sewan Kim ,  Taesung Lee

IPC: H01L21/768 ,  H01L21/285

Abstract: A method of fabricating a semiconductor device includes forming a dielectric layer on a lower structure. The method includes forming an opening to penetrate through the dielectric layer. The method includes alternately repeating a first operation, in which a first sputtering deposition process is performed to form a first metal pattern in the opening, and a second operation, in which a second sputtering deposition process is performed to form a second metal pattern in the opening, two or more times to form a first metal layer. The method includes forming a second metal layer on the first metal layer in an electroplating manner, and planarizing the first and second metal layers. Moreover, first and second process times, during which the first sputtering deposition process and the second sputtering deposition process, respectively, are performed, are each about five seconds or less.

公开(公告)号：US11244900B2

公开(公告)日：2022-02-08

申请号：US17029183

申请日：2020-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggil Lee ,  Sukhoon Kim ,  Sungmyong Park ,  Chanyang Lee ,  Honyun Park

IPC: H01L23/528 ,  H01L27/11582 ,  H01L27/11565 ,  H01L27/11575 ,  H01L27/11573

Abstract: A wiring structure includes first to third metal patterns on a substrate. The first metal pattern extends in a second direction and has a first width in a third direction. The second metal pattern extends in the third direction to cross the first metal pattern and have a second width in the second direction. The third metal pattern is connected to the first and second metal patterns at an area where the first and second metal patterns cross each other, and has a substantially rectangular shape with concave portions in each quadrant. The third metal pattern has a third width defined as a minimum distance between opposite ones of the concave portions in a fourth direction having an acute angle to the second and third directions, which is less or equal to than a smaller of the first and second widths.

公开(公告)号：US20250118600A1

公开(公告)日：2025-04-10

申请号：US18984957

申请日：2024-12-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Uihyoung Lee ,  Honyun Park ,  Jongseok Lee ,  Sewan Kim ,  Taesung Lee

IPC: H01L21/768 ,  C23C14/04

Abstract: A method of fabricating a semiconductor device includes forming a dielectric layer on a lower structure. The method includes forming an opening to penetrate through the dielectric layer. The method includes alternately repeating a first operation, in which a first sputtering deposition process is performed to form a first metal pattern in the opening, and a second operation, in which a second sputtering deposition process is performed to form a second metal pattern in the opening, two or more times to form a first metal layer. The method includes forming a second metal layer on the first metal layer in an electroplating manner, and planarizing the first and second metal layers. Moreover, first and second process times, during which the first sputtering deposition process and the second sputtering deposition process, respectively, are performed, are each about five seconds or less.

公开(公告)号：US12009300B2

公开(公告)日：2024-06-11

申请号：US17569774

申请日：2022-01-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggil Lee ,  Sukhoon Kim ,  Sungmyong Park ,  Chanyang Lee ,  Honyun Park

IPC: H01L23/528 ,  H01L21/768 ,  H10B43/10 ,  H10B43/27 ,  H10B43/40 ,  H10B43/50

CPC classification number: H01L23/5283 ,  H01L21/76816 ,  H01L21/76877 ,  H01L23/528 ,  H10B43/10 ,  H10B43/27 ,  H10B43/40 ,  H10B43/50

Abstract: A wiring structure includes first to third metal patterns on a substrate. The first metal pattern extends in a second direction and has a first width in a third direction. The second metal pattern extends in the third direction to cross the first metal pattern and have a second width in the second direction. The third metal pattern is connected to the first and second metal patterns at an area where the first and second metal patterns cross each other, and has a substantially rectangular shape with concave portions in each quadrant. The third metal pattern has a third width defined as a minimum distance between opposite ones of the concave portions in a fourth direction having an acute angle to the second and third directions, which is less or equal to than a smaller of the first and second widths.

公开(公告)号：US20220359282A1

公开(公告)日：2022-11-10

申请号：US17558699

申请日：2021-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Uihyoung Lee ,  Honyun Park ,  Jongseok Lee ,  Sewan Kim ,  Taesung Lee

IPC: H01L21/768 ,  H01L21/285

Abstract: A method of fabricating a semiconductor device includes forming a dielectric layer on a lower structure. The method includes forming an opening to penetrate through the dielectric layer. The method includes alternately repeating a first operation, in which a first sputtering deposition process is performed to form a first metal pattern in the opening, and a second operation, in which a second sputtering deposition process is performed to form a second metal pattern in the opening, two or more times to form a first metal layer. The method includes forming a second metal layer on the first metal layer in an electroplating manner, and planarizing the first and second metal layers. Moreover, first and second process times, during which the first sputtering deposition process and the second sputtering deposition process, respectively, are performed, are each about five seconds or less.

公开(公告)号：US20210225767A1

公开(公告)日：2021-07-22

申请号：US17029183

申请日：2020-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggil Lee ,  Sukhoon Kim ,  Sungmyong Park ,  Chanyang Lee ,  Honyun Park

IPC: H01L23/528

Abstract: A wiring structure includes first to third metal patterns on a substrate. The first metal pattern extends in a second direction and has a first width in a third direction. The second metal pattern extends in the third direction to cross the first metal pattern and have a second width in the second direction. The third metal pattern is connected to the first and second metal patterns at an area where the first and second metal patterns cross each other, and has a substantially rectangular shape with concave portions in each quadrant. The third metal pattern has a third width defined as a minimum distance between opposite ones of the concave portions in a fourth direction having an acute angle to the second and third directions, which is less or equal to than a smaller of the first and second widths.