公开(公告)号：US20220359282A1

公开(公告)日：2022-11-10

申请号：US17558699

申请日：2021-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Uihyoung Lee ,  Honyun Park ,  Jongseok Lee ,  Sewan Kim ,  Taesung Lee

IPC: H01L21/768 ,  H01L21/285

Abstract: A method of fabricating a semiconductor device includes forming a dielectric layer on a lower structure. The method includes forming an opening to penetrate through the dielectric layer. The method includes alternately repeating a first operation, in which a first sputtering deposition process is performed to form a first metal pattern in the opening, and a second operation, in which a second sputtering deposition process is performed to form a second metal pattern in the opening, two or more times to form a first metal layer. The method includes forming a second metal layer on the first metal layer in an electroplating manner, and planarizing the first and second metal layers. Moreover, first and second process times, during which the first sputtering deposition process and the second sputtering deposition process, respectively, are performed, are each about five seconds or less.

公开(公告)号：US20250118600A1

公开(公告)日：2025-04-10

申请号：US18984957

申请日：2024-12-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Uihyoung Lee ,  Honyun Park ,  Jongseok Lee ,  Sewan Kim ,  Taesung Lee

IPC: H01L21/768 ,  C23C14/04

Abstract: A method of fabricating a semiconductor device includes forming a dielectric layer on a lower structure. The method includes forming an opening to penetrate through the dielectric layer. The method includes alternately repeating a first operation, in which a first sputtering deposition process is performed to form a first metal pattern in the opening, and a second operation, in which a second sputtering deposition process is performed to form a second metal pattern in the opening, two or more times to form a first metal layer. The method includes forming a second metal layer on the first metal layer in an electroplating manner, and planarizing the first and second metal layers. Moreover, first and second process times, during which the first sputtering deposition process and the second sputtering deposition process, respectively, are performed, are each about five seconds or less.

公开(公告)号：US12247290B2

公开(公告)日：2025-03-11

申请号：US18197919

申请日：2023-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Suncheul Kim ,  Donghyun Lee ,  Uihyoung Lee ,  Donghoon Han

IPC: C23C16/52 ,  C23C16/448 ,  C23C16/505

Abstract: Provided is a flow rate control method, including: supplying fluid from a valve to a first sensor; measuring, by the first sensor, a first temperature of the fluid, and heating the fluid; measuring, by a second sensor, a second temperature of the heated fluid, and determining, by a controller, a first flow rate of the fluid based on comparison between the first temperature and the second temperature; supplying the fluid to a chamber and supplying an ignition voltage to the chamber through a radio frequency (RF) power source; measuring, by a third sensor, the ignition voltage; comparing, by the controller, the ignition voltage and a reference voltage to determine a second flow rate of the fluid; and controlling a supply of the fluid from the valve based on at least one of the first flow rate and or the second flow rate.

公开(公告)号：US12238923B2

公开(公告)日：2025-02-25

申请号：US18524794

申请日：2023-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Suncheul Kim ,  Donghyun Lee ,  Uihyoung Lee

IPC: H10B12/00

Abstract: A contact forming method may include providing a semiconductor substrate including a silicon oxide film to an interior of a chamber, subjecting a surface of the silicon oxide film to plasma nitrification treatment, supplying a source gas including TiCl4 and H2 onto the silicon oxide film subjected to the plasma nitrification treatment, and forming a barrier layer by igniting a plasma using the source gas.

公开(公告)号：US12211745B2

公开(公告)日：2025-01-28

申请号：US17558699

申请日：2021-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Uihyoung Lee ,  Honyun Park ,  Jongseok Lee ,  Sewan Kim ,  Taesung Lee

IPC: H01L21/768 ,  H01L21/285

Abstract: A method of fabricating a semiconductor device includes forming a dielectric layer on a lower structure. The method includes forming an opening to penetrate through the dielectric layer. The method includes alternately repeating a first operation, in which a first sputtering deposition process is performed to form a first metal pattern in the opening, and a second operation, in which a second sputtering deposition process is performed to form a second metal pattern in the opening, two or more times to form a first metal layer. The method includes forming a second metal layer on the first metal layer in an electroplating manner, and planarizing the first and second metal layers. Moreover, first and second process times, during which the first sputtering deposition process and the second sputtering deposition process, respectively, are performed, are each about five seconds or less.

公开(公告)号：US11871563B2

公开(公告)日：2024-01-09

申请号：US17568117

申请日：2022-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Suncheul Kim ,  Donghyun Lee ,  Uihyoung Lee

IPC: H10B12/00

CPC classification number: H10B12/485

Abstract: A contact forming method may include providing a semiconductor substrate including a silicon oxide film to an interior of a chamber, subjecting a surface of the silicon oxide film to plasma nitrification treatment, supplying a source gas including TiCl4 and H2 onto the silicon oxide film subjected to the plasma nitrification treatment, and forming a barrier layer by igniting a plasma using the source gas.

公开(公告)号：US09812331B2

公开(公告)日：2017-11-07

申请号：US14709775

申请日：2015-05-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Uihyoung Lee ,  Donghyun Lee ,  Jinhyoung Kim ,  Jaihyung Won ,  Sanghyun Lee ,  Jinho Choi

IPC: C25D21/14 ,  G05D11/08 ,  H01L21/288 ,  H01L21/306 ,  H01L21/66 ,  H01L21/67 ,  C25D17/00 ,  H01L21/768

CPC classification number: H01L21/306 ,  C25D17/001 ,  C25D21/14 ,  H01L21/2885 ,  H01L21/30604 ,  H01L21/3063 ,  H01L21/67086 ,  H01L21/67253 ,  H01L21/76898 ,  H01L22/26

Abstract: Provided are an apparatus for and a method of processing a substrate. The substrate processing apparatus includes a substrate processing unit to process a substrate using a processing solution containing a mixture of first and second sources; a source supplying part to supply the first and second sources to the substrate processing unit; at least one analyzer to measure a concentration of the second source in the processing solution or a pH value of the processing solution and adjust a measurement reference value of the second source in the processing solution using a standard solution, in which the first and second sources are mixed to have a predetermined concentration or pH value; and a standard solution supplying part to prepare the standard solution using the first and second sources to be supplied from the source supplying part and to supply the standard solution to the at least one analyzer.