公开(公告)号：US20240026539A1

公开(公告)日：2024-01-25

申请号：US18197919

申请日：2023-05-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suncheul Kim ,  Donghyun LEE ,  Uihyoung LEE ,  Donghoon Han

IPC: C23C16/52 ,  C23C16/505 ,  C23C16/448

CPC classification number: C23C16/52 ,  C23C16/505 ,  C23C16/4486

Abstract: Provided is a flow rate control method, including: supplying fluid from a valve to a first sensor; measuring, by the first sensor, a first temperature of the fluid, and heating the fluid; measuring, by a second sensor, a second temperature of the heated fluid, and determining, by a controller, a first flow rate of the fluid based on comparison between the first temperature and the second temperature; supplying the fluid to a chamber and supplying an ignition voltage to the chamber through a radio frequency (RF) power source; measuring, by a third sensor, the ignition voltage; comparing, by the controller, the ignition voltage and a reference voltage to determine a second flow rate of the fluid; and controlling a supply of the fluid from the valve based on at least one of the first flow rate and or the second flow rate.

公开(公告)号：US11476151B2

公开(公告)日：2022-10-18

申请号：US16825352

申请日：2020-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byounghoon Ji ,  Seoyoung Maeng ,  Minjoon Kim ,  Jongyong Bae ,  Jiho Uh ,  Hongtaek Lim ,  Donghoon Han

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/687

Abstract: A vacuum chuck includes a pedestal including a first surface on which a substrate may be mounted. The first surface of the substrate may include a vacuum hole to provide a vacuum pressure below the substrate, a vacuum groove connected to the vacuum hole, and a gas hole surrounding the vacuum groove to transmit a bottom gas to the substrate. A vacuum pipe may be provided to connect to the vacuum hole, and a gas pipe may be provided to connect to the gas hole. The diameter of the vacuum hole may be about 2 to about 3 micrometers, and a width of the vacuum groove may be about 1.6 to about 2.5 micrometers.

公开(公告)号：US11220748B2

公开(公告)日：2022-01-11

申请号：US16858054

申请日：2020-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghoon Han ,  Seoyoung Maeng ,  Byounghoon Ji ,  Minjoon Kim ,  Jongyong Bae ,  Kyuho Lee

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/44 ,  C23C16/52 ,  H01L21/285 ,  C23C16/458 ,  H01L27/11582

Abstract: A gas supply for a layer deposition apparatus including a plurality of charge distribution lines connected to a first gas supply source and a plurality of gas filling tanks respectively connected to the charge distribution lines is disclosed. Each of the gas filling tanks may be pressurized with a first gas from the first gas supply source, and a gas supply line connected to a second gas supply source. The apparatus may include a multi-dosing valve assembly connected to outlet portions of the gas filling tanks and configured to supply, sequentially, the first gas from the gas filling tanks to a process chamber. The multi-dosing valve assembly may include a flow path block having a main supply line connected to the process chamber and a backflow prevention valve block fastened to the flow path block and having an opening/closing valve therein.

公开(公告)号：US20210202217A1

公开(公告)日：2021-07-01

申请号：US17027460

申请日：2020-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hongtaek Lim ,  Junghyeon Kim ,  Sanggon Shin ,  Oleg FEYGENSON ,  Kyuho Lee ,  Donghoon Han ,  Kwangpyo Hong

IPC: H01J37/32 ,  C23C16/458

Abstract: An edge ring includes an annular body portion having a bottom surface and a top surface, a first step portion extending along an inner periphery of the body portion and having an annular first bottom surface positioned higher than the bottom surface of the body portion by a first height, an inclined portion extending along an inner periphery of the first step portion and having an inclined bottom surface extending at a first angle with respect to a first plane in which the first bottom surface is placed, a second step portion extending along an inner periphery of the inclined portion and having a second bottom surface positioned higher than the bottom surface of the body portion by a second height greater than the first height, and a plurality of passages extending outwardly from the first bottom surface of the first step portion at a second angle with respect to the first bottom surface.

公开(公告)号：US20210074574A1

公开(公告)日：2021-03-11

申请号：US16825352

申请日：2020-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byounghoon Ji ,  Seoyoung Maeng ,  Minjoon Kim ,  Jongyong Bae ,  Jiho Uh ,  Hongtaek Lim ,  Donghoon Han

IPC: H01L21/683 ,  H01L21/687 ,  H01L21/67

Abstract: A vacuum chuck includes a pedestal including a first surface on which a substrate may be mounted. The first surface of the substrate may include a vacuum hole to provide a vacuum pressure below the substrate, a vacuum groove connected to the vacuum hole, and a gas hole surrounding the vacuum groove to transmit a bottom gas to the substrate. A vacuum pipe may be provided to connect to the vacuum hole, and a gas pipe may be provided to connect to the gas hole. The diameter of the vacuum hole may be about 2 to about 3 micrometers, and a width of the vacuum groove may be about 1.6 to about 2.5 micrometers.

公开(公告)号：US12247290B2

公开(公告)日：2025-03-11

申请号：US18197919

申请日：2023-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Suncheul Kim ,  Donghyun Lee ,  Uihyoung Lee ,  Donghoon Han

IPC: C23C16/52 ,  C23C16/448 ,  C23C16/505

Abstract: Provided is a flow rate control method, including: supplying fluid from a valve to a first sensor; measuring, by the first sensor, a first temperature of the fluid, and heating the fluid; measuring, by a second sensor, a second temperature of the heated fluid, and determining, by a controller, a first flow rate of the fluid based on comparison between the first temperature and the second temperature; supplying the fluid to a chamber and supplying an ignition voltage to the chamber through a radio frequency (RF) power source; measuring, by a third sensor, the ignition voltage; comparing, by the controller, the ignition voltage and a reference voltage to determine a second flow rate of the fluid; and controlling a supply of the fluid from the valve based on at least one of the first flow rate and or the second flow rate.

公开(公告)号：US20210062339A1

公开(公告)日：2021-03-04

申请号：US16858054

申请日：2020-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghoon Han ,  Seoyoung Maeng ,  Byounghoon Ji ,  Minjoon Kim ,  Jongyong Bae ,  Kyuho Lee

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/458 ,  C23C16/52 ,  H01L21/285

Abstract: A gas supply for a layer deposition apparatus including a plurality of charge distribution lines connected to a first gas supply source and a plurality of gas filling tanks respectively connected to the charge distribution lines is disclosed. Each of the gas filling tanks may be pressurized with a first gas from the first gas supply source, and a gas supply line connected to a second gas supply source. The apparatus may include a multi-dosing valve assembly connected to outlet portions of the gas filling tanks and configured to supply, sequentially, the first gas from the gas filling tanks to a process chamber. The multi-dosing valve assembly may include a flow path block having a main supply line connected to the process chamber and a backflow prevention valve block fastened to the flow path block and having an opening/closing valve therein.